2SB1329
Abstract: 2SD2005
Contextual Info: 2SB1329 Transistor, PNP Features Dimensions Units : mm • available in MRT package • high power, Pc = 1.2 W • low collector saturation voltage, typically VCE(sat) = -0.2 V at Iq/I b = -500 mA/-50 mA • complementary pair with 2SD2005 2SB1329 (MRT)
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2sb1329a/-502sd2005 |
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2SD2005
Abstract: 2SD2004 2SB1482 2SB1328 2SD2010
Contextual Info: Bipolar transistors-2SA series MRT summary Table 6 MRT general use transistors *c V (A) (A) Pc (W) (T. = 2 5 X ) 2SB1329 -3 2 -1 -2 1.2 2SB1330 -8 0 -0 .7 2SB1328 -1 6 0 -1 .5 2SB1517 -5 0 2SD2005 V CEO Application Part no. (max) * V CES h FE h FE ranking
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2sb13292sb13302sb13282sb1517+72sd20052sd20062sd20042sd21462sb14822sb13332sd2010
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2SD1929
Abstract: 2SD2172 2sd1930 2SB1425 2SA1780 2SB1041 2SD2159 2SA1482 2SB1256 2SD2007
Contextual Info: ¡TÏÏTÏÏÏ1 T r an s i s t o r s • TO-92L, MRT Types Type Function It: u 1. A -32 1 -2 0.75 1.2 82 - 390 Ver ( V ) -3 -80 0.7 . 0.75 1.2 82 - 390 -3 -100 -32 2 -3 -80 -1 2SB1329 2SA935 2SB1330 2SB1010 2SB1331 2SB1041 2SB1332 -50 -1 -1 5 2SB1043 2SB1212
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o-92l2sa9342sa9352sb1010+132sb10412sb10432sb12122sb14252sc20602sd19292sd21722sd19302sa17802sd21592sa14822sb12562sd2007
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2SB1329
Abstract: 2SD2005 C12W 2sb1329r
Contextual Info: h7 /T ransistors 2SB1329 I T frz f PNP '> •;= !> Epitaxial Planar PNP Silicon Transistor & * -f "j 3- > *3/Medium Power Amp. & Switching 2SB1329 • • il- J fi'Ì ììE l/ D im e n s io n s Unit : mm $ £ 1) PC= 1.2W 2) VcE(sat) * ’ •(& < h b 1 y
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2sb13292sd2005--500ma/--50mac12w+12sb1329r
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2sb1355
Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Contextual Info: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^
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2sr5622sb13292sa17062sb1433+132sb15172sa17072sa17082sb14592sb13322sb13552sb14932sb15162sa18422sb12612sb9062sb13282sa1770
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2SD2005
Abstract: 1FS transistor TRANSISTOR C 369 transistor 2sD2005
Contextual Info: 2SD2005 Transistor, NPN Features Dimensions Units : mm • available in MRT package • high collector power dissipation: Pc = 1.2 W suitable for use at low voltage because transistor has a low saturation voltage, typically V CE(sat) = 0.15 V at lc/lB = 500 mA/50 mA
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2sd20052sb13291fs transistortransistor c 369+1transistor 2sd2005
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C2021M
Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)
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2sc2021ljne2sb8212sa937aln\2sc2021ln+162sb12762021m2sa937am2sb7372sd7862sa1137c2021mb1568mosfet ftr 032sc1b152sa1904mosfet ftr 03-e2sc2021e2sc1740 transistor2sk22952s0240
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2SB1328
Abstract: 2SD2008 2SB1329 2SD2010 2SB1041 2sd2172 2SD1929 2SB1425 2SA1861 2SB1306
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application TO-92L I T0-92LS | MRT Part Nò.
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o-92lt0-92lso-92ls2sa1819+102sb13282sd20082sb13292sd20102sb10412sd21722sd19292sb14252sa18612sb1306
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2SD2008
Abstract: 2SD2006 transistor 2SD2006 2Sb1333 2SD2010 2SB1482 2SB1515 2SB1306 transistor 2SD2004 2SB1331
Contextual Info: Transistors TO-92L • T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 °C ) P a ckage Application
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o-92lt0-92lso-92ls2sa1819+102sd20082sd2006transistor 2sd20062sb13332sd20102sb14822sb15152sb1306transistor 2sd20042sb1331
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2N4403 626
Abstract: 2n4401- 312 MPSa13 549 2N5087 DTD123YV 2n3904 2n3906 2SB1482 2sd2396 2sb1335a 2SC2389S
Contextual Info: Index Index 2N3904 2N3906 2N4124 2N4126 2N4401 2N4403 2N5087 2N5088 494 462 494 462 489 450 455 482 2SC1645S 220 2SC1740S 223 2SC1741 AS 228 2SC1741S 232 2SC1809S 237 2SC2058S 241 2SC2389S 246 2SC3271F 250 2SC3969 254 2SC4015 259 2SC4037 263 2SC4038 268 2SC4039 273
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2n39042n39062n41242n4126+152n44012n44032n50872n50882sc1645s2sc1740s2n4403 6262n4401- 312mpsa13 549dtd123yv2n3904 2n39062sb14822sd23962sb1335a2sc2389s
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2SC1740 transistor
Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN
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2sc2021ln2sb8212sb12762sc2021mln+16o-92lo-92ls2sb737v2sd7862sa11372sc17402sc1740 transistora1757b1130am2sd2061f2sd14662sc5083b1236amos-fet darlington2sc4721transistor 2sa1819
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2sd1954
Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o
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2sa790m2sa874m2sa937am2sa937amln+162sb909m2sb910m2sb911m2s61042m2sb1044m2sb1066m2sd19542sc5083dtc144eva2sc2030dtc114yla2sc47222sd1228m qrdtd123yv2sc2675dtb143ts
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2n1092n13042n13052n1307+162n16132n17112n18932n21022n21482n2165transistor datasheet d1555d1555 transistortransistor d1651d1555d1557d1554d1651transistor s1854transistor d1555transistor d1878
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2SD2010
Abstract: 2SD2008 2SD2006 2Sb1333 2SD947 2SB1328 J0801 2SD2005 2SD2004 2SB1330
Contextual Info: ROHM CORP DE 1 7 ñ 2 ñ cm □1 Tr □ □ □ llS 'ì 7 I D 7 “-2 . 9 > _ o / LU 1 • TO-92L Types Í* * New Products ☆ Under Development Type 2SC3269 Function. Chroma Driver • -100 *2SB1256 High Voltage Switching fc A - , • 0.1 pc ( w r 0.75 .ir (MHz')
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17fl2o-92l2sc32692sb1256+131k-10k2sd18092sd19292sd20102sd20082sd20062sb13332sd9472sb1328j08012sd20052sd20042sb1330
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2SB1482
Abstract: 2SD2004 low noise transistors rf 2SD2422 2sc4040 2sd2006 2SC4137 2SB1443 2sd2010
Contextual Info: Bipolar transistors-2SA series Overall product summary Product summary—Sheet 1 of 4 Package Application V CEO * V CES FTL ATV TO-92 MRT SPT V Part no. Part no. (The ( symbol indicates a matched pair) 50 /2SA933AS '2SC1740S 120 2SC2389S Low noise Preamplifier
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/2sa933as2sc1740s2sc2389s/2sa1561a+142sc40382sc4037/2sa15602sc40402sb1277/2sb12372sb14822sd2004low noise transistors rf2sd24222sd20062sc41372sb14432sd2010
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2SC2030
Abstract: OTB-122 28C32 DTD143EF DTC143EVA BUK 155 DTD114EF 2SC337 2SD18 TV6,5
Contextual Info: The Class and Basic Ordering Units for Standard and Semi-standard Products To make it easier for the customer to select the type of product best suited to specific applications, we offer transistors in three types : 1 standard, (2 ) semi Package FTR 2SA785
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1k--10k1k--20kdt3c144wdt5a113z+16dt5a114edt5a124edt5a143edt5a143tdt5a143xdt5a144e2sc2030otb-12228c32dtd143efdtc143evabuk 155dtd114ef2sc3372sd18tv6,5
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Mosfet FTR 03-E
Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
Contextual Info: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP
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2sk19762sk20952sk2176o-220fp+142sa7852sa7902sa790m2sa806mosfet ftr 03-emt 1389 fe2sd122dtc144gslow noise darlington transistordtc114evadtc143efv/65e9 transistortransistor2sc337
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RCM2008R
Abstract: 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857
Contextual Info: 87 87 87 87 87 88 88 88 88 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 90 90 90 87 87 87 87 87 87 86 86 86 86 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 86 86 86 86 86 87 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 87 86 86 86 88 88
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2n39062n39462n39472n4059+16n40602n40612n40622n41232n41242n4125rcm2008r1ss299bu24204rcm2027ba3422sba843ba6490fsda119 k2ba6404ba857
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2SA1482
Abstract: 2SD2008 2SA1903 2SD2010 2sc4722 2SD2005 2SA1861 2sa1820 2Sb1333 2SB1374
Contextual Info: _ . . • Transistors 7028*^ DQQ7M31 TbT ■ R H M T0-92L •T0-92LS •MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (Ta=25*C )
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dqq7m31t0-92lt0-92lso-92l+11o-92ls2sa14822sd20082sa19032sd20102sc47222sd20052sa18612sa18202sb13332sb1374
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2SB1333
Abstract: 2SD2006 2SD2005 2SD2010 2SD2008 2SA1861 2SD2011 2SB1306 2sd2159 2SB1482
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L I T0-92LS | MRT Part Nò.
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o-92lt0-92lso-92ls2sa1819+102sb13332sd20062sd20052sd20102sd20082sa18612sd20112sb13062sd21592sb1482
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2SB1482
Abstract: 2SC4722 2sa1820 2SD2172
Contextual Info: Transistors TO-92L • TO-92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. P a ckage A pplication TO-92L TO-92LS MRT Part No.
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o-92lo-92ls-92ls5k10k+42sb14822sc47222sa18202sd2172
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2SB1329
Abstract: 2SD2005
Contextual Info: h"7 > V $ /Transistors 2SD 2005 • 2SD2005 Xt : $ * ' > NPN y 'J =l > N7 > V Epitaxial Planar NPN Silicon Transistor 4» «*IM M !/M ecllu m Power Amp. /Dimensions Unit : mm « * 1) P C = 1 .2 W 2 ) V C E ( s a t ) * ''' ïiŒ K li/F ^ i i b r t ' 5 0
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2sd2005500ma/50ma2sb1329 |
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