2SB1261 Search Results

2SB1261-Z

Abstract: high hfe transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SB1261-Z TO-251 TRANSISTOR PNP FEATURES z z 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol 1 1. BASE High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SB1261-Z TO-251 TRANSISTOR PNP FEATURES z z 1. BASE High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)

Contextual Info: MCC TM Micro Commercial Components 2SB1261
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x • • • PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics

Contextual Info: MCC TM Micro Commercial Components Features x x • • 2SB1261
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics

2SB1261-Z

Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1261-Z TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features 2.30 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR PNP TO – 252 FEATURES z Low VCE(sat) z High DC Current Gain 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: MCC TM Micro Commercial Components Features x x • • • 2SB1261
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics

2SB1261

Abstract: high hfe transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR PNP TO-252-2L FEATURES 123 1. BASE z z 1 High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB1261-Z

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261-Z TRANSISTOR PNP TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO:

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SB1261-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

2SB1261

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

2sb1355

Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Contextual Info: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

TOP267

Abstract: bTI51
Contextual Info: User’s Manual µPD78F8004H, 78F8005H, 78F8006H 8-Bit Single-Chip Microcontroller With LIN Transceiver & Power Supply µPD78F8004H µPD78F8005H µPD78F8006H Document No. U17461EJ4V0UD00 4th edition Date Published September 2006 NS CP(K) 2006 Printed in Japan

diac kr 206

Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
Contextual Info: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

U12326E PD78F0103

Contextual Info: User’s Manual PD788001A, 788002A, 78F8002A 8-Bit Single-Chip Microcontroller With LIN Transceiver & Power Supply μPD788001A μPD788002A μPD78F8002A Document No. U17742EJ2V0UD00 2nd edition Date Published March 2006 NS CP(K) 2006 Printed in Japan [MEMO]

2SB1261

Contextual Info: 9 86 L UOjjeJOdJOQ 33|\| li'if im W Z66I z g V 0809—OX •) < # S ä f ¥ ; S X * fi X - * % 0S5® P*D A n a ‘sui 0 I 5 M J * O S I H— a SS — a OSI M 01 M O 'I V S ‘ 0 - V 0 ‘ S - A O 'Z - A 0 9 - A (a sz= 'i ) I S* j o a )a j ( 3 s I nti)O T

mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.

uPD788001A

Abstract: UPD788001 uPD78F80
Contextual Info: User’s Manual µPD788001A, 788002A, 78F8002A 8-Bit Single-Chip Microcontroller With LIN Transceiver & Power Supply µPD788001A µPD788002A µPD78F8002A Document No. U17742EJ3V0UD00 3rd edition Date Published September 2006 NS CP(K) 2006 Printed in Japan

Contextual Info: User’s Manual PD788004A, 788005A, 788006A 8-Bit Single-Chip Microcontroller With LIN Transceiver & Power Supply μPD788004A μPD788005A μPD788006A Document No. U17753EJ2V0UD00 2nd edition Date Published February 2006 NS CP(K) 2006 Printed in Japan [MEMO]