2SB75 Search Results

2sd845

Abstract: 2SB755 2SB75 BASE15-0
Contextual Info: Inchange Semiconductor Product Specification 2SD845 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SB755 ・High transition frequency ・High breakdown voltage :VCEO=150V min APPLICATIONS ・For power amplifier applications

2SD843

Abstract: 7030L
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD843 INDUSTRIAL APPLICATIONS _ Unit In mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 10.3MAX. jÿ 3.610.2 FEATURES: • Low Saturation Voltage : v CE sat = 0 *5V (Max.) (at Ic=4A) • Complementary to 2SB753.

2sb755

Abstract: 2SD845
Contextual Info: SavantIC Semiconductor Product Specification 2SB755 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SD845 ·High transition frequency ·High breakdown voltage :VCEO=-150V min · APPLICATIONS ·For power amplifier applications

2SB753

Abstract: 2SD843
Contextual Info: SavantIC Semiconductor Product Specification 2SB753 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD843 ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·High current switching applications

Contextual Info: TOSHIBA {DISCRETE/OPT0> Sb 9097250 TOSHIBA <DISCRETE/OPTO DE J T O ^ S S O 56C 07351 DDD73S1 C 7"- $ 3 - 2SB753 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in nun HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.

Toshiba 2SD844

Abstract: 2sb754
Contextual Info: TOSHIBA Sb {DISCRETE/OPTO} 2SB754 I 9097250 TOSHIBA » E i <DISCRETE/OPTO 56C SOTTESO DDG73SM oy^ J J - V Í 073^4 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) U n it HIGH CURRENT SWITCHING APPLICATIONS. 15.9 MAX. £ in mm 3.2± 0.2 POWER AMPLIFIER APPLICATIONS.

2SB757

Abstract: 2SB 731 2SD847 SC-65 T151 T760 T810 T930 PW20A 2SB75
Contextual Info: 2SB757 P N P J H £ ? 4 r > 7 U 7 l'- i- B E P I T A X I A L P L A N E R T Y P E _ * « , « * < H IG H C U R R E N T . * * > * * H IG H S P E E D S W I T C H I N G I W f é ’+ Â I O u tlin e D r a w in g s 4 .5 ° 2.0 *0J Features

Contextual Info: J.Elieu ^s.mi-L-onaactoi I/ loaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SB757 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package •High collector current •Wide area of safe operation

2SB757

Abstract: 2SD847 SC-65
Contextual Info: 2SB757 FUJI POWER TRANSISTOR EPITAXIAL PLANER TYPE HIGH CURRENT, HIGH SPEED SWITCHING Outline Drawings TO-3P Features Excellent linearity in hFE High collector current Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter Applications

y9w marking

Abstract: 2SB751 2SB759A 2SD837 2SB759 2sd837a 2SB751A ULN pnp vc2545 Si PNP Epitaxial Planar Darlington
Contextual Info: PANASONIC INDL/ELEK-CSENI} h ^ y V T S _ 7SC D | bT3 2 flS4 " 7 ^ 3 3 > T L e7 □ □□flat.D □ 2SB751, 2SB751A 2SB751, 2SB751A > ij =i v P N P x UV h Si P N P Epitaxial Planar Darlington JbZ fi'— i-J& jr— i&mi&WtlMtyi f f l / A F Power Amplifier

2SD568L

Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD Max hFE *T ON) Min (Hz) Max k)N Max (A) (s) ICBO r (CE)Mt Max (Ohms) Toper Max Package Style CO D vices 20 Watts or More, (Cont'd) 5 10 2SA1185 2SB827 2SD1063 2SB754

2SB75

Abstract: 2SB757 2SD847 SC-65
Contextual Info: 2SB757 FUJI POWER TRANSISTOR EPITAXIAL PLANER TYPE HIGH CURRENT, HIGH SPEED SWITCHING Outline Drawings TO-3P Features Excellent linearity in hFE High collector current Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter Applications

2SB75

Abstract: 2sd847 2SB757 npn general purpose high voltage amplifier
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD847 DESCRIPTION •Good Linearity of hFE ·High Collector Current ·Wide Area of Safe Operation ·High Reliability ·Complement to Type 2SB757 APPLICATIONS ·Audio amplifier applications

2sb753

Contextual Info: TO SH IBA 2SB753 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB753 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm High Collector Current : 10 = —7A Low Collector Saturation Voltage

2SD889

Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Contextual Info: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A

2SD844

Abstract: 2SB754 2SB754 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SD844 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SB754 ·High collector current :IC=7A ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·High current switching applications

2sD845

Abstract: 2SB755
Contextual Info: SavantIC Semiconductor Product Specification 2SD845 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SB755 ·High transition frequency ·High breakdown voltage :VCEO=150V min APPLICATIONS ·For power amplifier applications

2SB1013

Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
Contextual Info: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018

toshiba 2SB755

Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Contextual Info: 50 - m. € £ Type No. 2SB 698 - Manuf. n = SANYO M. 2SA950 2SA952 2SA1232 * B ÍL 2SB817 2SB 700 - B ÍI 2SB817 2SB755 2SB 700A B AL 2SB817 2SB755 B ÍL 2SB755 B ÍL 2SB756 2SB 703 , 2SB 703A 2SB 705 2SB 710 tö T MATSUSHITA 2SA719 & — MITSUBISHI 2SA1398

2SD843

Abstract: 2SB753
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB753 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -4A ·High Collector Power Dissipation ·Complement to Type 2SD843

Contextual Info: 2SB757 P N P l f c * ? + '> '7 JU7 l EPITA XIAL PLANER TYPE *««, HIGH CU R R EN T. HIGH SPEED SWITCHING IW fé’+âs I Outline Drawings 4 5 *° 2.0 *0J Features • hFE<7 ,J—7 ,j T ' f A * £ i ' • ft Excellent linearity in hFE High collector current

2SD837

Abstract: 2SB751 2SD849 TCA 700 y 2SB751A 2SD837A TO-3 2SB panasonic fc 130
Contextual Info: PANASONIC INDL/ELEKiSEMI} 75C D | 1^35654 D C C m t H 0 |~~D ’"*T- 3 3 ' ^ 2SD837, 2SD837A 2SD837, 2 S D 8 3 7 A '> i; a > N P N U > h > / S i N P N T rip le Diffused P la n a r D arlington f f i J lJ i & ll f t i i't S f f l / A F Pow er Amplifier 2SB751, 2SB751A £ z i 'y z f >J *

2SB754

Abstract: 2SD844 2SB754 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SB754 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SD844 ·High collector current :IC=-7A ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·High current switching applications

2sd847

Abstract: 2SB757
Contextual Info: SavantIC Semiconductor Product Specification 2SD847 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High collector current ·Wide area of safe operation ·Complement to type 2SB757 APPLICATIONS ·Audio amplifications ·Serie regulators ·General purpose power amplifiers