2SD10 Search Results

2SD1088

Abstract: igniter 2sd1088 TOSHIBA
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1088 INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. U n i t in m m HIGH VOLTAGE SWITCHING APPLICATIONS. 1U.3MAX. 5Ä 3T FEATURES: . H i g h DC C u r r e n t G a i n : h F E = 2 0 0 0 ( M i n .) MAXIMUM RATINGS

t0880

Abstract: T0-880AB 2SD1069
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1069 Unit in mm TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. 1 a 3 MAX., 03.6 :r0.2 . ’ HIGH VOLTAGE SWITCHING APPLICATIONS. "X- FEATURES : . Built in Damper Type. . High Collector Current Capability. . High Collector Power Dissipation Capability.

2sd1087

Contextual Info: 5b ^ M r m í ^ E TE/0PT<>} 2SD1087 9097250 TOSHIBA <DISCRETE/OPTO DE I TCH7E5G ^ 56C 07 859 D T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE _ DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS •- • Unit in tnm 3 4.3 MAX HIGH CURRENT SUITCHItlG APPLICATIONS.

2SD1092

Abstract: TCS5C
Contextual Info: 2SD1092 SILICON NPN TRIPLE DIFFUSED TYPE POWER REGULATOR FOR LINE OPERATED TV. Unit in m m 03.Z±O.2 FEATURES : . Excellent Wide 80 W . S e c Safe Operating Area at Tc=25°C . I n c l u d e d A b a l a n c h e Di o d e : . High DC Current Gain : h F E — 500

2SB826

Abstract: 2SD1062
Contextual Info: JMnic Product Specification 2SB826 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD1062 ・Wide area of safe operation APPLICATIONS ・Relay drivers, ・High-speed inverters, converters

2SD1025

Contextual Info: Product Specification www.jmnic.com 2SD1025 Silicon Power Transistors DESCRIPTION ・DARLINGTON ・With TO-220 package PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-220 and symbol Absolute maximum ratings(Ta=25℃)

2SB828

Abstract: 2SD1064
Contextual Info: JMnic Product Specification 2SB828 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1064 ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・Relay drivers,high-speed inverters, converters,and other general highcurrent switching applications

2SD1060

Abstract: 2SB824
Contextual Info: Product Specification www.jmnic.com 2SD1060 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector-emitter saturation voltage ・Complement to type 2SB824 APPLICATIONS ・Suitable for relay drivers,high-speed Inverters,converters,and other general

2SB827

Abstract: 2SD1063
Contextual Info: JMnic Product Specification 2SB827 Silicon PNP Power Transistors • DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1063 ・Wide area of safe operation ・Low collector-emitter saturation voltage : VCE sat =(–)0.4V max. APPLICATIONS ・Universal high current switching as solenoid

Contextual Info: 2SB824 / 2SD1060 Ordering number : EN686J SANYO Semiconductors DATA SHEET 2SB824 / 2SD1060 PNP / NPN Epitaxial Planar Silicon Transistors 50V / 5A Switching Applications Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.

Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

2sd1047 equivalent

Abstract: 2SB817 2SD1047 2SB817 2SD1047
Contextual Info: Inchange Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1047 APPLICATIONS ・140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

Contextual Info: Transistors IC SMD Type Product specification 2SD1005 Features World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. VCE=2V, IC=500mA . Absolute Maximum Ratings Ta = 25 Parameter

nec 2501

Abstract: Marking mk SOT89 SOT89 transistor marking MK 2SD1006 2SD1007 IEI-1213 MEI-1202 MF-1134 2SD1006-HM
Contextual Info: DATA SHEET SILICON TRANSISTORS 2 S D 1 6 , S 2 D 1 7 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1006 and 2SD1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package

2sd1071 equivalent

Abstract: 2SD1071 IC/2sd1071 equivalent
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1071 Preliminary NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER  DESCRIPTION The UTC 2SD1071 is a high voltage power amplifier, it uses UTC advanced technology to provide the customers high DC current gain

2SD1051

Abstract: 2SB819
Contextual Info: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB819 Unit: mm 6.9±0.1 1.5 1.0 0.85 4.5±0.1 4.1±0.2 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.

2SD1063

Abstract: 2SB827
Contextual Info: SavantIC Semiconductor Product Specification 2SD1063 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Low collector saturation voltage ·Complement to type 2SB827 APPLICATIONS ·Universal high current switching as solenoid

2SD1064

Abstract: 2SB828
Contextual Info: SavantIC Semiconductor Product Specification 2SD1064 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SB828 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Relay drivers, ·High-speed inverters,

2SB828

Abstract: 2SD1064 2SB828,
Contextual Info: SavantIC Semiconductor Product Specification 2SB828 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1064 ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Relay drivers,high-speed inverters,

2sb829

Abstract: 2SD1065
Contextual Info: SavantIC Semiconductor Product Specification 2SB829 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1065 ·Wide area of safe operation ·Low collector saturation voltage : VCE sat =–0.5V max. APPLICATIONS ·Relay drivers,

2SD1024

Contextual Info: SavantIC Semiconductor Product Specification 2SD1024 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High DC current gain ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings Ta=25

2SB816

Abstract: 2SD1046
Contextual Info: SavantIC Semiconductor Product Specification 2SB816 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1046 ·Wide area of safe operation APPLICATIONS ·For LF Power Amplifier, 50W Output Large Power Switching Applications

2SD1023

Abstract: darlington Vce-200V
Contextual Info: SavantIC Semiconductor Product Specification 2SD1023 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High DC current gain ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings Ta=25

2SB826

Abstract: 2SD1062
Contextual Info: SavantIC Semiconductor Product Specification 2SB826 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD1062 ·Wide area of safe operation APPLICATIONS ·Relay drivers, ·High-speed inverters, converters