2SB1033 Search Results

2SB1033

Abstract: 2SD1437
Contextual Info: 2SB1033 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD1437 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

Contextual Info: ROH M CO 4GE D LTD E3 7020^=1=] 000SS24 2 E S RHM 2SB1033 / T ransistors - p s 3-/9 xt°$*yrJi'7°l'-J-BPNP y ' j 3 > h 7 > y ^ ^ fôJÜ&H^Jii'iïffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor W f i- t f > i0 / D im e n s io n s {U n it : mm

2SB1033

Abstract: 2SD1437
Contextual Info: Inchange Semiconductor Product Specification 2SB1033 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1437 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SB1033

Abstract: 2SD1437
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1033 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1437

2S8834 NEC

Abstract: 2S8834 2S8941 B0180 B0936 2S8505 S570G 2s87 2S8906 2SB834Y
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 '. 10 >= 20 80936 B0936 B0936F B0936F 2SB507 2S8508 2S81094M 043C8 ~1r~~ 25 30 35 40 BUY90 BUY90 MJE171 2N302S 2S81015 2S88340 2SB834 2S8834 2SB834 2S890S0 2SB994 2SB1187 2SB1187 2SB1033 2SB1033 2SB1094L 2S8744A

2SA934

Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
Contextual Info: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54

2SD2023

Abstract: 2SB1033
Contextual Info: SavantIC Semiconductor Product Specification 2SD2023 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB1033 ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifiers ·Power drivers ·DC-DC converters

2sd143

Abstract: 2SD1437 2sb1033 2SD14
Contextual Info: h "7 > V ^ 2 S 2SB1033 /T r a n s is to r s B 1 3 3 X h ; ^ d r ' > T J U 7 0U - ^ ^ P N P y ' j a > h 7 > y ^ $ 1ÊJi>Æ ^Ji^lliffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • • ^ f f i ^ j ii a / D i m e n s i o n s U nit : mm

2SB1033

Abstract: 2SD1437
Contextual Info: 2SD1437 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB1033 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

2SB1033

Abstract: 2SD1437
Contextual Info: SavantIC Semiconductor Product Specification 2SB1033 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1437 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SD2023

Abstract: 2SB1033
Contextual Info: Inchange Semiconductor Product Specification 2SD2023 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB1033 ・Low collector saturation voltage APPLICATIONS ・Low frequency power amplifiers ・Power drivers ・DC-DC converters

2SB1039

Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035
Contextual Info: - 72 - w. T a = 2 5 sC 1* E P Í Í T c = 2 T O m 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035 2SB1036 2SB1037 2SB1038 2SB1039 2SB1045 2SB1046 2SB1048 2SB1050 2SB Î052 2SB1054 2SB1055 2SB1056 2SB1057 2SB1058 2SB1059 2SB1061 2SB1062 2SB1063

2SB1033

Abstract: 2SD1437
Contextual Info: JMnic Product Specification 2SB1033 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1437 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

Contextual Info: ROHM CO LTD 7fl20ciclcl 0 0 0 b 0 3 4 1 H R H H 4GE D N 7 > y 7s $ / J ransistors 2SD2023 2SD2023 - 7=33-11 =.W &k% Tf\s—ï f à NPN '> U = l> h 7 > V ^ ^ 1g ;ilil£ti:ftiiliM /L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

IMX5T108

Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
Contextual Info: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855

2SD1437

Abstract: 2SB1033 2sB103
Contextual Info: K ~7> V 7 $ / I ransistors 2SD1437 2SD1437 H M i S f f c 7 ° U - ^ N P N '> U = ]> h 7>'sZ$ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • W F 2 T h ill/D im en s io n s U n it: mm ~ 1) V C E ( s a t ) = 0 . 3 V ( T y p . ) “ “ (at Ic / I b = 2 A /0 .2 A )

2SD2023

Abstract: transistor adaa 2SB1033
Contextual Info: h 7 > ÿ X ^ / T ransistors 2SD2023 2SD2023 H g lÉ I f c 7 ° U - ^ N P N v 'j3 > h 7 >V^^ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor x tiiH /D im e n s io n s Unit: mm 1) V ce (sat) VcE(sat)=0.3V (Typ.) le / I b =2A/0.2A 2) ¡s-2si^süiii$ hFE

Contextual Info: 2SD2023 /Transistors 2SD2023 '> • ; = ! > h 7 > y ^ ^ npn Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • ^ ff^ & H /D im e n s io n s Unit: mm • 1) VCE (sat) 'o 4 . 5 + 0.2 VcE(sat)=0.3V (Typ.) Ic / I b =2A /0.2A 2) hFE tlX l ' 5 0

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

2SD369A

Abstract: to-53 2SC1025 MJE2491 KT816V matsua
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M