2SD1437 Search Results

2SB1033

Abstract: 2SD1437
Contextual Info: 2SB1033 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD1437 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

2SB1033

Abstract: 2SD1437
Contextual Info: Inchange Semiconductor Product Specification 2SB1033 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1437 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SD1437

Abstract: 2SB1033 2sB103
Contextual Info: K ~7> V 7 $ / I ransistors 2SD1437 2SD1437 H M i S f f c 7 ° U - ^ N P N '> U = ]> h 7>'sZ$ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • W F 2 T h ill/D im en s io n s U n it: mm ~ 1) V C E ( s a t ) = 0 . 3 V ( T y p . ) “ “ (at Ic / I b = 2 A /0 .2 A )

2SB1033

Abstract: 2SD1437
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1033 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1437

2SB1033

Abstract: 2SD1437
Contextual Info: 2SD1437 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB1033 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

2SB1033

Abstract: 2SD1437
Contextual Info: SavantIC Semiconductor Product Specification 2SB1033 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1437 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

Contextual Info: h 7 > y ^ ^ / T ransistors 2SD1437 2SD1437 E .W .& W l- fl'- j- M NPN '> '; = ! > l&MI'/J&WJjtiU f f l/ L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • W K ^ -> £ l/D im e n s io n s (U n it: mm 1) VCe , sat )=0.3V (Typ.) (at Ic / I b =2A /0.2A )

rohm 574

Abstract: 640N
Contextual Info: 4DE R O H M CO LTD D 7 0 2 0 ^ 0 D 0 s a 7 s IRHM 3 / T ransistors 2SD1437 7 = 3 3 -/1 2SD1437 H g iÉ i& 7 ° U - :H f ê N P N '> U = 1 > h 7 > V X ^ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • sSEl/D im en sio n s Unit : mm 1) VCE( Sat)=0.3V(Typ.) f c n 0

2SB1033

Abstract: 2SD1437
Contextual Info: JMnic Product Specification 2SB1033 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1437 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD2037

Abstract: 2SC4354 2sd2041 2SD2036 2SB1335 2SB1359 2SD1832 2sd1856 2SD2034 2SB1293
Contextual Info: R OHN CORP □1 D E l ? f l a f l 1 cn -i" f nfiffirr DGDllta 3 W - I '-” I 7 ~ -Z 9 * & / D P i . ; ij 4 * ^ » p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji • TO-220, TO-220FP Types p - , * New Products

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

Contextual Info: ROH M CO 4GE D LTD E3 7020^=1=] 000SS24 2 E S RHM 2SB1033 / T ransistors - p s 3-/9 xt°$*yrJi'7°l'-J-BPNP y ' j 3 > h 7 > y ^ ^ fôJÜ&H^Jii'iïffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor W f i- t f > i0 / D im e n s io n s {U n it : mm

2SD1292

Abstract: 2SA1038 834x
Contextual Info: h 7 > V X £ /T r a n s is to r s panM « S E ¿ í f H t í l C O l ' T • M3ÉIÍHSS • papHffiE>S» 2 7 H !£ 7Tsb i t if, ^ t ir o ^ 3 * « 5 x V N '< X í , r v w X liÿ g f iD ic s iï f â f ê M * £ t > o r í s e . f , -fro n M » ttt tlS D f fla i* » t/« iit ti* r o * 4 ic « t- 3 T a is n i

2SD2037

Abstract: 2SC4354 2SD1761 J0801 2SB1335 2SB1353 2SD1832 2sd1856 2SD2034 2SB1293
Contextual Info: ROHN CORP □1 D E l ? f l a f l 1 cn -i" f DGDllta . - I '-” W 3 I P i . ; 7 ~ -Z 9 * & / D ij4 * ^ » n f if f ir r • TO-220, TO-220FP Types p - , i l i 111 n l * New Products Type, - Funclibn_ Driver p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

2sd143

Abstract: 2SD1437 2sb1033 2SD14
Contextual Info: h "7 > V ^ 2 S 2SB1033 /T r a n s is to r s B 1 3 3 X h ; ^ d r ' > T J U 7 0U - ^ ^ P N P y ' j a > h 7 > y ^ $ 1ÊJi>Æ ^Ji^lliffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • • ^ f f i ^ j ii a / D i m e n s i o n s U nit : mm

2SD1431

Abstract: 2SD1415 2SD1432 2-16D3A 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423
Contextual Info: - 248 - Ta-25T>, *E[l[äTc=25'C M S ?± 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423 2SD1423A & PSW/D Vq b q VcEQ (V) (V) 60 S Ic C D O Pc Pc* ICBO (A) (ff) (ff) (max) <//A) 60 7 2 VcB (V) S f (min) i U (max) 30 100 60 2000 15 0 0 0 f t ( T a = 2 5 tC )

2SB1039

Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035
Contextual Info: - 72 - w. T a = 2 5 sC 1* E P Í Í T c = 2 T O m 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035 2SB1036 2SB1037 2SB1038 2SB1039 2SB1045 2SB1046 2SB1048 2SB1050 2SB Î052 2SB1054 2SB1055 2SB1056 2SB1057 2SB1058 2SB1059 2SB1061 2SB1062 2SB1063

2SD1460

Abstract: 2SD1477 2SD1473 2sd1467 2SD1422 2sd1425 2SB1029 2SD1466 2SD1058 2SD1407
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1401 1500 7 3.5A 80W(Tc=25ºC) 150 25 5 500 3* 120W 2SD1402

2SD1966

Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Contextual Info: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5