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    2sb1030 Datasheets

    2sb1030 datasheet (25)

    Part ECAD Model Manufacturer Description Type PDF
    2SB1030 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB1030 Panasonic PNP Transistor Original PDF
    2SB1030 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB1030 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1030 Unknown Cross Reference Datasheet Scan PDF
    2SB1030 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1030 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1030 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2SB1030 Unknown Shortform Data and Cross References (Misc Datasheets) Scan PDF
    2SB1030A Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB1030A Panasonic PNP Transistor Original PDF
    2SB1030A Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB1030A Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP AF AMP 50V 500MA NEW S Original PDF
    2SB1030A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1030A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1030A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1030A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2SB1030A Unknown Shortform Data and Cross References (Misc Datasheets) Scan PDF
    2SB1030AQ Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB1030AR Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
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    Panasonic Electronic Components 2SB1030A

    TRANS PNP 50V 0.5A NS-B1
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    Panasonic Electronic Components 2SB1030ARA

    TRANS PNP 50V 0.5A NS-B1
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    2sb1030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2008 - 2SB1030

    Abstract: 2SD1423
    Text: complies with the RoHS Directive (EU 2002/95/EC). 2SB1030 2SB1030_IC-VCE 2SB1030_PC-Ta -1.2 VCE , 100 0 2SB1030_VCE (sat)-IC IC VCE -3 mA -2 mA - 0.2 0 40 80 120 0 , ) Collector-emitter voltage VCE (V) 2SB1030_VBE (sat)-IC 600 -10 Ta = -25°C 25°C 75°C -1 - 0.1 - , °C 120 80 40 0 0.1 1 10 Emitter current IE (mA) 2SB1030_NV-IC Noise voltage NV , current IC (A) Cob VCB -1 fT IE 400 200 - 0.1 Collector current IC (A) 2SB1030_fT-IE


    Original     		PDF 2002/95/EC) 2SB1030 2SD1423 2SB1030 2SD1423

    2008 - Not Available

    Abstract: No abstract text available
    Text: /95/EC). 2SB1030A 2SB1030_PC-Ta PC Ta 2SB1030_IC-VCE IC VCE 2SB1030_VCE (sat)-IC , 120 160 Ambient temperature Ta (°C) 2SB1030_VBE (sat)-IC Collector-emitter voltage VCE (V) 2SB1030_hFE-IC - 0.01 - 0.01 - 0.1 -1 -10 Collector current IC (A) 2SB1030_fT-IE VBE , 10 100 Collector current IC (A) 2SB1030_Cob-VCB Collector current IC (A) 2SB1030_NV-IC , This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1030A Silicon


    Original     		PDF 2002/95/EC) 2SB1030A 2SD1423A

    2SB1030

    Abstract: 2SB1030A 2SD1423 2SD1423A
    Text: Transistor 2SB1030 , 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification , Parameter (Ta=25°C) Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 Ratings ­30 VCBO ­60 ­25 VCEO emitter voltage 2SB1030A ­50 (0.8) q , 2SB1030A Collector to emitter 2SB1030 voltage 2SB1030A Emitter to base voltage Forward , *2 *1h ­0.6 pF Pulse measurement 2SB1030 , 2SB1030A Transistor PC - Ta IC -


    Original     		PDF 2SB1030, 2SB1030A 2SD1423 2SD1423A 2SB1030 2SB1030 2SB1030A 2SD1423A

    2SB1030

    Abstract: 2SB1030A 2SD1423A
    Text: ) 2SB1030_VBE (sat)-IC FE -10 2SB1030_fT-IE fT IE 160 VCE = -10 V VCB = -10 V Ta = 25 , 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1030A 2SB1030_IC-VCE 2SB1030_PC-Ta -1.2 VCE(sat) IC Ta = 25°C -1.0 IC / IB = 10 Th an W is k y Th e a pro ou , ) 500 Collector power dissipation PC (mW) 2SB1030_VCE (sat)-IC IC VCE (V ) PC Ta -10 , (A) -10 2SB1030_NV-IC Cob VCB 20 NV IC IE = 0 f = 1 MHz Ta = 25°C Th 16


    Original     		PDF 2002/95/EC) 2SB1030A 2SD1423A 2SB1030 2SB1030A 2SD1423A

    2003 - 2SB1030

    Abstract: 2SB1030A 2SD1423 2SD1423A
    Text: Transistors 2SB1030 , 2SB1030A Silicon PNP epitaxial planar type For low-frequency , open) Symbol 2SB1030 Rating Unit VCBO -30 V -60 2SB1030A 0.45+0.20 ­0.10 0.45+0.20 ­0.10 (2.5) (2.5) -25 V Collector-emitter voltage 2SB1030 (Base open) 2SB1030A , Publication date: March 2003 SJC00065BED 1 2SB1030 , 2SB1030A IC VCE Collector power dissipation , = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) 2SB1030


    Original     		PDF 2SB1030, 2SB1030A 2SD1423 2SD1423A 2SB1030 2SB1030 2SB1030A 2SD1423A

    2008 - Not Available

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1030A 2SB1030_PC-Ta PC Ta 2SB1030_IC-VCE IC VCE 2SB1030_VCE (sat)-IC VCE(sat) IC (V ) 500 -1.2 -1.0 Ta = 25 , (°C) 2SB1030_VBE (sat)-IC Collector current IC (A) CE(sat) Collector-emitter voltage VCE (V) 2SB1030_hFE-IC - 0.01 - 0.01 - 0.1 -1 -10 Collector current IC (A) 2SB1030_fT-IE VBE , Collector current IC (A) 2SB1030_Cob-VCB Collector current IC (A) 2SB1030_NV-IC Emitter current IE


    Original     		PDF 2002/95/EC) 2SB1030A 2SD1423A

    1998 - 2SB1030

    Abstract: 2SB1030A 2SD1423 2SD1423A transistor 2SB1030
    Text: Transistor 2SB1030 , 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification , =25°C) Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 Ratings ­30 , Collector cutoff current Collector to base 2SB1030 voltage 2SB1030A Collector to emitter 2SB1030 voltage 2SB1030A Emitter to base voltage Forward current transfer ratio ­30 V , ~ 340 1 2SB1030 , 2SB1030A Transistor PC - Ta IC - VCE ­1000 400 350 ­800


    Original     		PDF 2SB1030, 2SB1030A 2SD1423 2SD1423A 2SB1030 2SB1030 2SB1030A 2SD1423A transistor 2SB1030

    2008 - 2SB1030

    Abstract: 2SB1030A 2SD1423A 2sB103
    Text: complies with the RoHS Directive (EU 2002/95/EC). 2SB1030A 2SB1030_IC-VCE 2SB1030_PC-Ta -1.2 VCE , 100 0 2SB1030_VCE (sat)-IC IC VCE -3 mA -2 mA - 0.2 0 40 80 120 0 , ) Collector-emitter voltage VCE (V) 2SB1030_VBE (sat)-IC 600 -10 Ta = -25°C 25°C 75°C -1 - 0.1 - , °C 120 80 40 0 0.1 1 10 Emitter current IE (mA) 2SB1030_NV-IC Noise voltage NV , current IC (A) Cob VCB -1 fT IE 400 200 - 0.1 Collector current IC (A) 2SB1030_fT-IE


    Original     		PDF 2002/95/EC) 2SB1030A 2SD1423A 2SB1030 2SB1030A 2SD1423A 2sB103

    2003 - Not Available

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1030 , 2SB1030A , open) 2SB1030 2SB1030A VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating -30 -60 -25 -50 -7 - 0.5 -1 300 , Collector-emitter voltage 2SB1030 (Base open) 2SB1030A Emitter-base voltage (Collector open) Collector current Peak , open) 2SB1030 2SB1030A 2SB1030 2SB1030A VEBO ICBO ICEO hFE1 * hFE2 Collector-emitter saturation voltage , the RoHS Directive (EU 2002/95/EC). 2SB1030 , 2SB1030A PC Ta 500 -1.2 IC VCE Base-emitter


    Original     		PDF 2002/95/EC) 2SB1030, 2SB1030A 2SD1423 2SD1423A 2SB1030 2SB1030A 2SB1030

    1998 - 2SB1030

    Abstract: 2SB1030A 2SD1423 2SD1423A
    Text: Transistor 2SB1030 , 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification , =25°C) Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 Ratings ­30 , Collector cutoff current Collector to base 2SB1030 voltage 2SB1030A Collector to emitter 2SB1030 voltage 2SB1030A Emitter to base voltage Forward current transfer ratio ­30 V , ~ 340 1 2SB1030 , 2SB1030A Transistor PC - Ta IC - VCE ­1000 400 350 ­800


    Original     		PDF 2SB1030, 2SB1030A 2SD1423 2SD1423A 2SB1030 2SB1030 2SB1030A 2SD1423A

    2003 - Not Available

    Abstract: No abstract text available
    Text: Transistors 2SB1030 , 2SB1030A Silicon PNP epitaxial planar type For low-frequency , 2SB1030A Collector-emitter voltage 2SB1030 (Base open) 2SB1030A Emitter-base voltage (Collector open , (Emitter open) 2SB1030 2SB1030A 2SB1030 Collector-emitter voltage (Base open) 2SB1030A , 2SB1030 , 2SB1030A PC Ta 500 -1.2 IC VCE Base-emitter saturation voltage VBE(sat) (V) Ta = 25 , (Emitter open) 2SB1030 Rating -30 -60 -25 -50 -7 -1 Unit V 0.45+0.20 ­0.10 15.6±0.5 (0.8


    Original     		PDF 2SB1030, 2SB1030A 2SD1423 2SD1423A 2SB1030 2SB1030A

    NEC 1357

    Abstract: 2sa1175 2SB710 2SA914 2SA937 2SA1091 2SA953 2SA1309A 2sa1361 2SA1142
    Text: M ! il 2SA953 2SA1175 2SA1309A 2SA112 3 2SA1123 2SA733 2SB810 2SA1413 2SA1309A 2SB1030


    OCR Scan     		PDF 2SA1351, 2SA1352, 2SA953 2SA1309A 2SA914 2SB1011 2SA937 2SA1142 2SA1700 2SB825 NEC 1357 2sa1175 2SB710 2SA937 2SA1091 2SA953 2sa1361 2SA1142

    2SB1039

    Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035
    Text: 15 2SD1423 (New S Type) ECB 2SB1030 15 2SD1423A (New S Type) ECB 2SB1030A 2 , -160 60 200 -5 -0.15 -1 -0.5 -0. 05 2SB1030 föT LF PA -30 -25 -0.5 0.3 -0.1 -20 85 340 -10 -0.15 -0.6 -0.3 -0.03 2SB1030A m LF PA -60 -50 -0.5 0.3 -0. 1 -20 65 340 -10 -0.15 -0.6 -0.3 -0.03


    OCR Scan     		PDF 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SD1499 2SB1063 2SD1505 O-220ABÂ 2SB1039 2SB1045 2SB1038 2SB1035

    2SA101S

    Abstract: 2SA933LN 2SA970 2sa977 2SB927 2SA562TM 2SA914 2SA1783 2SA1232 Toshiba 2SB754
    Text: 2SB1030 2SA1515S 2SA 1151 - b s 2SA1783 2SA1015 2SA1127 2SA999L 2SA933 2SA 1152 . b a 2SA1450 2SA817


    OCR Scan     		PDF 2SA1208 2SA1320 2SA1482 2SA1360 2SA914 2SA1783 2SA101S 2SA933LN 2SB698 2SA562TM 2SA101S 2SA933LN 2SA970 2sa977 2SB927 2SA562TM 2SA914 2SA1232 Toshiba 2SB754

    2SA1281

    Abstract: 2SB927 2SB873 2SA1115 2SA817A 2SA1255 2SA1266 1265 2SA1227 2SA1263n
    Text: «ami 2SB698 2SA950 2SA673 2SB621 2SA1398 2SA1515 2SA 1272 - «as? 2SB698 2SA1150 2SB810 2SB1030


    OCR Scan     		PDF 2SA1048 2SB774 2SA933S 2SA1162 2SA1257 2SA1330 2SB792 2SA1226 2SA1022 2SA1733K 2SA1281 2SB927 2SB873 2SA1115 2SA817A 2SA1255 2SA1266 1265 2SA1227 2SA1263n

    2SA1115

    Abstract: 2SA1115 E DTA124EK RT1P141C 2SA1175 2sa564 2SA1309A DTA124ES 2SA1015 2SA1018
    Text: 2SB940 2SB621 2SB1036 2SB976 2SA1309A 2SB710 2SB1030 2SA564 UN2113 UN2112 UN211E UN 2111 UN4113 UN 4112


    OCR Scan     		PDF 2SAU75 2SA953 2SA1032 2SA1309A 2SA1018 2SA879 2SA1115 2SA933S 2SA933 2SA1115 2SA1115 E DTA124EK RT1P141C 2SA1175 2sa564 DTA124ES 2SA1015

    2SD2436

    Abstract: 2SD2433 2SD2434 2S897 2SD1995 2SC3312 2sb1446 2SD2458 2SD2529 D49 transistor
    Text: 12SD1820/A C 2SB710/A I 2SD602/A 1A2SB1582 I ©2SD2432 ( 2SB1030 /A {2SD1423/A Î2SA719/720 I25C1317/1318 i


    OCR Scan     		PDF O-92NL 2SB1462 I2SD2216 f2SB1218A I2SD1819A 2SB709A 12SD601A f2SB1627 I2SD2496 C2SA1309A 2SD2436 2SD2433 2SD2434 2S897 2SD1995 2SC3312 2sb1446 2SD2458 2SD2529 D49 transistor

    2SB596

    Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
    Text: - fé T 2SBE15 2SA1298 2SB624 2SA1036K 2SB 780 fé T 2SB808 2SB1030 2SA933S 2SB 781 0 ïz


    OCR Scan     		PDF 2SB824 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB942A 2SB686 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a

    2SA817A

    Abstract: 2SA934 2SB774 2SA1127 2sa1306 2SA999 2SA1807 ANIF4M DTA124ES UN4112
    Text: 2SA1339 2SA1150 2SB1030 2SA854S 2SA 1391 S H s* 2SA817A 2SA1190 2SA1127 2SA933 2SA 1392 ^ H Â


    OCR Scan     		PDF 2SA1740 2SB1203 2SA1244 1385Z 2SA1244Ã 2SB817 2SA1302 2SB1163 2SA817A 2SA934 2SB774 2SA1127 2sa1306 2SA999 2SA1807 ANIF4M DTA124ES UN4112

    1998 - 2SD1423

    Abstract: 2SB1030 2SB1030A 2SD1423A
    Text: Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 3.0±0.2 4.0±0.2 s Features Parameter (Ta=25°C) Symbol Collector to 2SD1423 base voltage 2SD1423A Collector to 2SD1423 Ratings 30 VCBO marking V 60 25 VCEO emitter voltage 2SD1423A Unit 1 V 50 Emitter to base voltage VEBO 7 ICP 1 IC 0.5 A Collector power dissipation PC


    Original     		PDF 2SD1423, 2SD1423A 2SB1030 2SB1030A 2SD1423 2SD1423 2SB1030A 2SD1423A

    2SB1446

    Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
    Text: Silicon Small Signal Transistors Application Functions SS-Mini Type (D1 ) I 2SB1462 # General-use Low Frequency Amplifiers and Others Package (No.) S-Mini Type (D5) ' 2SB1218A 2SD1819A : 2SB1219/A i 2SD1820/A Mini Type (D12) ! 2SB709A I 2SD601A i 2SB710/A i 2SD602/A New S Type (034) i 2SA1309A ! 2SC3311A 2SB1030 /A i 2SD1423/A TO-92 (D46) M Type (D35) i 2SB642 I 2SD637 TO-92NL (D48) TO-92 L (047) Mini -Power Type (019) V ceo MT1 Type (037) ( 2SB1320A i 2SD1991A fr (MHz


    OCR Scan     		PDF 2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SB1446 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632

    2SD2458

    Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
    Text: 2SD602/A f A2SB1582 I ©2SD2432 ! 2SB1030 /A I2SD1423/A Î2SA719/720 I25C1317/1318 f 2SB643/644A 12SD638


    OCR Scan     		PDF O-92NL 2SB1462 2SD2216 2SB1218A I2SD1819A 2SB709A 2SD601A 2SB1627 I2SD2496 2SA1309A 2SD2458 2SD2436 2SD2434 2SB1600 2SB642 2SD2433 2SD1010 2sB774 transistor HOA1404-2

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: 2SB0951/AJ 2SB0952/A 2SBQ953/A 2SB0954/A 2SB0956 2SB0967 2SB0968 2SB0970 2SB0976 2SB1011 2SB1030 /A 2SB1036


    OCR Scan     		PDF T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A

    2003 - Not Available

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1423, 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Features · Optimum for high-density mounting · Allowing supply with the radial taping Unit: mm 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD1423 2SD1423A VCEO VEBO IC ICP * Symbol VCBO Rating 30 60 25 50 7 0.5 1 300 150 -55 to


    Original     		PDF 2002/95/EC) 2SD1423, 2SD1423A 2SB1030 2SB1030A 2SD1423 2SD1423A 2SD1423

    2SB1030

    Abstract: 2SB1030A 2SD1423 2SD1423A
    Text: Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 (0.8) 3.0±0.2 s Absolute Maximum Ratings Parameter Collector to 2SD1423 base voltage 2SD1423A Collector to (Ta=25°C) Symbol Ratings 30 VCBO 2SD1423 0.45+0.20 ­0.10 0.45+0.20 ­0.10 (2.5) (2.5) 0.7±0.1 25 VCEO emitter voltage 2SD1423A Unit V 60 (0.8) 0.75 max. Optimum for high-density


    Original     		PDF 2SD1423, 2SD1423A 2SB1030 2SB1030A 2SD1423 2SB1030A 2SD1423 2SD1423A

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