2SD1423A Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423, 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423A • Features  Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SB1030A

Abstract: 2SD1423 2SD1423A 2sB103
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423A • Package M Di ain sc te on na tin nc ue e/ d  Features  Code NS-B1  Absolute Maximum Ratings Ta = 25°C

2SB1030A

Abstract: 2SD1423 2SD1423A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SD1423

Abstract: 2SB1030 2SB1030A 2SD1423A
Contextual Info: Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SD1423 base voltage 2SD1423A Collector to

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 0.8 3.0±0.2 • Absolute Maximum Ratings Parameter Collector to 2SD1423 base voltage 2SD1423A Collector to

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 0.75 max. Optimum for high-density mounting. Allowing supply with the radial taping.

2SD1431

Abstract: 2SD1415 2SD1432 2-16D3A 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423
Contextual Info: - 248 - Ta-25T>, *E[l[äTc=25'C M S ?± 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423 2SD1423A & PSW/D Vq b q VcEQ (V) (V) 60 S Ic C D O Pc Pc* ICBO (A) (ff) (ff) (max) <//A) 60 7 2 VcB (V) S f (min) i U (max) 30 100 60 2000 15 0 0 0 f t ( T a = 2 5 tC )

2SB1030

Abstract: 2SB1030A 2SD1423A 2sB103
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A transistor 2SB1030
Contextual Info: Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistors 2SD1423, 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5 • Optimum for high-density mounting

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SD1423 base voltage 2SD1423A Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Features  Package  Optimum for high-density mounting  Allowing supply with the radial taping

Contextual Info: Transistors 2SB1030, 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 (0.8) M Di ain sc te on na tin nc ue e/ d 0.75 max. 15.6±0.5 • Optimum for high-density mounting

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030, 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2

2SB1030

Abstract: 2SB1030A 2SD1423A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.