2SD1423 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423, 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423A • Features  Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SB1030A

Abstract: 2SD1423 2SD1423A 2sB103
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423 Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 • Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to

2SB1030

Abstract: 2SD1423
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 • Package  Optimum for high-density mounting  Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423A • Package M Di ain sc te on na tin nc ue e/ d  Features  Code NS-B1  Absolute Maximum Ratings Ta = 25°C

2SB1030A

Abstract: 2SD1423 2SD1423A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SD1423

Abstract: 2SB1030 2SB1030A 2SD1423A
Contextual Info: Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SD1423 base voltage 2SD1423A Collector to

2SB1030

Abstract: 2SD1423
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423 Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 • Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 0.8 3.0±0.2 • Absolute Maximum Ratings Parameter Collector to 2SD1423 base voltage 2SD1423A Collector to

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 0.75 max. Optimum for high-density mounting. Allowing supply with the radial taping.

2SD1431

Abstract: 2SD1415 2SD1432 2-16D3A 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423
Contextual Info: - 248 - Ta-25T>, *E[l[äTc=25'C M S ?± 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423 2SD1423A & PSW/D Vq b q VcEQ (V) (V) 60 S Ic C D O Pc Pc* ICBO (A) (ff) (ff) (max) <//A) 60 7 2 VcB (V) S f (min) i U (max) 30 100 60 2000 15 0 0 0 f t ( T a = 2 5 tC )

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A transistor 2SB1030
Contextual Info: Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistors 2SD1423, 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5 • Optimum for high-density mounting

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistors 2SB1030, 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5 • Optimum for high-density mounting

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SD1423 base voltage 2SD1423A Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Features  Package  Optimum for high-density mounting  Allowing supply with the radial taping

Contextual Info: Transistors 2SB1030, 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 (0.8) M Di ain sc te on na tin nc ue e/ d 0.75 max. 15.6±0.5 • Optimum for high-density mounting

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030, 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2

2SB1030

Abstract: 2SB1030A 2SD1423A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and