2SA720 Search Results

2SA720A

Abstract: 2SA720A R 2SC1318A DSA003766 2SA720A transistor
Contextual Info: Transistor 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. • Absolute Maximum Ratings

2SA720

Abstract: 2SA720R 2SA720-R 2SA720Q 2SA720S "CSR 1000" datasheet 2SA720-Q
Contextual Info: 2SA720 -0.5 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  For low-frequency power amplification and driver amplification. G H CLASSIFICATION OF hFE

2SC1318

Abstract: 2SC1318R 2SC1318 transistor 2SC1318Q 2SA720 2SC1318-S 2SC1318-R 2SC1318 R
Contextual Info: 2SC1318 0.5 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   Low Collector to Emitter Saturation Voltage VCE sat Complementary Pair with 2SA720

2SA720

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2

2SA798

Abstract: 2SA733 2SA785 2SA778AK 2sc1567 2SA800 2SC1398 2SA720A 2SA798 g 2SA743
Contextual Info: 14 - m % T a = 2 5 cC , * E P Í Í T c = 2 5 ‘ ü m 2SA719 & tt fóT 2SA720 2SA720A fâT 2SA732 m M £ & VcBO VcEO (V) (V) Ici D C) Pc Pc* (W) (W) \M ld A / (A) 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 85 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 -10 40 200 -10

2SA720A

Abstract: 2SC1318A 2SA720A transistor 2sa72
Contextual Info: Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA720A Unit: mm 5.0±0.2 4.0±0.2 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

transistor 2sa720

Contextual Info: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 5.1±0.2 • Features Symbol Collector to 2SA0719 base voltage

2SA720A

Abstract: 2SC1318A
Contextual Info: Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA720A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. • Absolute Maximum Ratings

2SC1318A

Abstract: 2SA0720A 2SA720A
Contextual Info: Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA0720A 2SA720A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2SA0720A

Abstract: 2SA720A 2SC1318A SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Symbol

2SC1318

Abstract: 2SC1317 transistor 2SC1317
Contextual Info: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SA719 and 2SA720.

2SA720

Abstract: 2SA719 2SC1317 2SC1318 transistor 2sa720
Contextual Info: Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 Complementary pair with 2SC1317 and 2SC1318. Parameter Ta=25˚C Symbol Collector to

2SA934

Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
Contextual Info: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54

2SC1318 transistor

Abstract: 2SA0719 2SA0720 2SA719 2SA720 2SC1317 2SC1318 SC-43A 2SC1317 transistor
Contextual Info: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 4.0±0.2 5.1±0.2 5.0±0.2 • Complementary pair with 2SC1317 and 2SC1318.

2SC1318 transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1318 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat) z Complementary Pair with 2SA720 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2sa720

Abstract: 2sa719 85170
Contextual Info: 2SA719/2SA720 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features For low-frequency power amplification and driver amplification MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Value 2SA719 -30 2SA720

2SC1318 transistor

Abstract: 2SC1317 2SC1318 2SC1317 transistor 2SA0719 2SA0720 2SA719 2SA720
Contextual Info: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA0719 2SA719 and 2SA0720 (2SA720) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0719 and 2SA0720.

2sa72

Abstract: 2SA0719 2SA0720 2SA719 2SA720 2SC1317 2SC1318 SC-43A MA2401
Contextual Info: Transistors 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features Symbol Rating Unit VCBO −30

2SA0720A

Abstract: 2SA720A 2SC1318A
Contextual Info: Transistor 2SA0720A 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 5.0±0.2 • Absolute Maximum Ratings 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO

2sC1317 transistor

Abstract: 2SC1318 2SC1318 transistor 2SC1317 2SA0719 2SA0720 2SA719 2SA720 SC-43A
Contextual Info: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 2SA719 and 2SA0720 (2SA720) 4.0±0.2 5.1±0.2 5.0±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA0720A

Abstract: 2SA720A 2SC1318A
Contextual Info: Transistor 2SA0720A 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2SA720

Abstract: 2sa719 transistor 2sa720
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA719/2SA720 TRANSISTOR PNP FEATURES For low-frequency power amplification and driver amplification TO-92 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: Transistors 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features