2S8834 NEC
Abstract: 2S8834 2S8941 B0180 B0936 2S8505 S570G 2s87 2S8906 2SB834Y
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 '. 10 >= 20 80936 B0936 B0936F B0936F 2SB507 2S8508 2S81094M 043C8 ~1r~~ 25 30 35 40 BUY90 BUY90 MJE171 2N302S 2S81015 2S88340 2SB834 2S8834 2SB834 2S890S0 2SB994 2SB1187 2SB1187 2SB1033 2SB1033 2SB1094L 2S8744A
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2s8834 nec2s88342s8941b0180+6b09362s8505s570g2s872s89062sb834y
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2N4858 TEXAS
Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
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o-126o-126var2s85492s8527+152s85282s81217ksa9312n34682s87332n4858 texas2n4872siemens 5sn2n4433qualidyne2n4418transtek40391 rca2n4417api 560
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SIEMENS 5SN
Abstract: 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
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o-126o-126var2s85492s8527+122s85282s81217ksa9312n34682s8733siemens 5sn2n3406unitrode diode 24039 sot-892n34002n34832n3436 motorola
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iC-Nx
Abstract: 2s872
Contextual Info: i HITACHI 2SD768 K SSL ICON NPN EPITAXIAL MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2S872? K' s. 2 I nHicnx iftengi- »a f ¡o« ?»»S* j K it ii u r r ns-t-or (JE D E C TO-220AB) I A B SO LU T E MAXIMUM RATINGS (Ta ^ S 'C j item SvmtxsH MAXIMUM COLLECTO R DISSIPATION
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8CP69
Abstract: 8C304 2s81132 TO226AA 202-AA sk3262 2S8528 2S8549 SIEMENS 5SN 2SA885
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
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o-126o-126var2s85492s8527+132s85282s81217ksa9312n34682s87338cp698c3042s81132to226aa202-aask3262siemens 5sn2sa885
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2SD737
Abstract: 2SD744 2sb737 equivalent 2SD712 2SD736A 2SD778 2SD717 2SB699 2sd730 2SB737
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj ºñ°í 2SD701 2SD702 400 5 40A 2SD703 200 5 30A 2SD704 50 7 5A 2SD705
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2sd7012sd7022sd7032sd704+162sd7052sd7062sd7072sd7082sd7092sd7102sd7372sd7442sb737 equivalent2sd7122sd736a2sd7782sd7172sb6992sd7302sb737
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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TXAL 228 B
Abstract: 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243
Contextual Info: QUICK REFERENCE GUIDE 2 ELECTRICAL SPECIFICATION LIST 2 PIN ULTRA SUPER MINI MOLD • Noise Clipping Diode fMNCD[ JC Series) M axim am R atings5 Electrical Characteristics {T a = 2 5 ‘CJ O a = 2 5 ‘C ì Type No. Application V b r (V) P tm W ) M IN . S M A X
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/pa17q2pa1710txal 228 b2sab12+8k15892sc2554k2499p015m2sd 16942482sk2134diode zener nt 1243
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K1273
Abstract: K2158 1A4M K1399 K2111 K680A a1464 D82C J356 k1587
Contextual Info: QUICK REFERENCE GUIDE QUICK REFERENCE GUIDE 1 QUICK REFERENCE TABLE 3 PIN MINI MOLD □ Switching Diodes I Q UICK REFERENCE GUIDE_ Qß ! 3 PIN MINI MOLD SC-59 . _ □ Transistors and FETs v c e o 15 20 20 2S C 2223 2S A1462 40 30
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sc-59a14622sb624a1464+15b736ak1582j185wrd36mrd39mrd10fmk1273k21581a4mk1399k2111k680ad82cj356k1587
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MPS9488
Abstract: 8C208 KT3818 2SA838 8C252 LOW-POWER SILICON PNP MPS948 8C2528 BSY41 8C513
Contextual Info: RF LOW-POWER SILICON PNP Item Part Number Number V BR CEO 5 10 NA02EI NA02FI NA12EI NA22EI NA22FI NA22XI NA22YI NA02EY NA02FY NA22EY ~~~~x~ 15 20 NA22YY 8C2058 8C2088 SF213 SF313 8C2528 8C2538 8C2828 ~~~~~~ 25 30 NA02FJ NA12EJ NA22EJ NA22FJ NA22XJ NA22YJ 8C259C
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na02eina02fina12eina22ei+16na22fina22xina22yina02eyna02fyna22eymps94888c208kt38182sa8388c252low-power silicon pnpmps9488c2528bsy418c513
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2SC4748
Abstract: 2SC5306 K20-K k08 transistor
Contextual Info: POWER TRANSISTOR •General switching Package code Ratings Type Ito. DPAK 2SC4499 L /<S) z s e e iis / TO *12« 28C2889 MOO 2SD781 28D975 ' TO-22Ô 2S8566® 2SB566A® AB 2SC2812 2SC2613 2SC2816 e scsim 2SC2979 2SC4913 2SC5273 28047m 2SD476A® 2S)1136
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2sd8642sd9702sd9912sd1085+102sd11142s011152sd1126k-20k2sd11272sd12482sc47482sc5306k20-kk08 transistor
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80244C
Abstract: RCA1C11 2S8754 mj04 2S8999 BOT42C 2S8553
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 55 60 65 70 75 80 85 90 95 Max 15 15 15 15 15 15 15 20 25 25 75 75 75 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 100 100 100 120 120 120 120 120 120 40 55 120 15 15 20 20 40 40 200 160 240 6.0 6.0 6.0 6.0 6.0 6.0
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80244crca1c112s8754mj04+32s8999bot42c2s8553
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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2N6805
Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab
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2s811882s88912s8632ksml3552+14sml3575sml3578sml69501sml695092n68052n64562n680320c362nj771rca 2n667420c842n66172nj771a2n6525
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2SB667
Abstract: MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN1455LF MN41464A08 MN6404
Contextual Info: Discontinued Types • Discontinued •m o s L S Is Type No. Alternative MN1001 Type No. Alternative Type No. — MN14T6 MN1418 — MN15621 MN110 MN1101 — MN1420 - — MN1421 - MN115 - MN1425 MN1427 - MN116 — MN1200 - MN1441 MN1201 — MN1202 - MN1204
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mn14t6mn1418mn1420mn1421+16mn1425mn1427mn1441mn1442mn1432mn1450b2sb667mn41c4256-08mn41256a08mn187164mn41256a-08mn2114-33sk129mn1455lfmn41464a08mn6404
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
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2S877
Abstract: diode GG 14 2S8370 Low-Power Germanium PNP AF201U TA269 2N270 2s875 2G108 2N404
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 2S843 MA899 MA899 TA269 TA269 TA269 2N404 2N1370 2N1374 2N1382 ~~~~g~A 15 20 2N1287 2N658 1340 GT20 GT20 GT83 GT83 TAM14 +~~: 25 30 TA14 TR18 TA18 TR18 2S8185 2S8111 2N249 2N291 ~~~~OU 35 -40 AF201U 2N131
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2s843ma899ta2692n404+112n13702n13742n13822s877diode gg 142s8370low-power germanium pnpaf201u2n2702s8752g108
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10db2p10db4p10db6p180b6a+10t35wtransistor kt 606a65e9 transistorsr 6863 d2sc965cs9011sr1k diodekt850transistor st25atransistor 130001 8d
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ERC24-06
Abstract: EXB357
Contextual Info: The specification of Hybrid IC EXB 357 for transistor base drive 1. Application This specification shall be applica ted to Hybrid IC EXB 357 for transistor base drive produced by Fuji Electric Co.-Ltd. 2. Outline and Circuit diagram 3 e? M A X * ^ 5 EXB357
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exb357et206etf11-050erc81-004+3esab82-004esac82-004erc24-06
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2Sc945 equivalent
Abstract: 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent
Contextual Info: 10. Specifications of MINI M O L D Device Typ« Number Regular /Reversal 2SA811 2SA812/2SA812R PNP Tran sistor NPN Tranlilto r Nearest Equivalent* ' M M BA811.M M BA812 | BCW29.SCW 30,BCW 69,8CW 70,MMBTA70 TO-92 Packaged Equivalent Page 2SA641 21 2SA733.BC556.BC5571BC558,BC559,BC560
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2sa8112sa812/2sa812r2sb624/2sb624r2s8736/2s8736r+16907a/ntm2907artm3906/ntm3906rba811ba8122sa6412sc945 equivalent2sa733 equivalent2sa733b2sc1623 equivalent2sc2002 equivalent2sc12162sa6032sk1042sc9232sc2001 equivalent
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