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    2N270 Search Results

    2N270 Datasheets (57)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N270
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 65.75KB 1
    2N270
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.2KB 1
    2N270
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 45.73KB 1
    2N270
    Unknown GE Transistor Specifications Scan PDF 38.56KB 1
    2N270
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 145.41KB 1
    2N270
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 97.88KB 1
    2N270
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 111.6KB 1
    2N270
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 89.45KB 1
    2N270
    Unknown Vintage Transistor Datasheets Scan PDF 47.49KB 1
    2N270
    RCA RCA Transistor and Diode Data Scan PDF 86.34KB 2
    2N2706
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 81.79KB 1
    2N2706
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 83.88KB 1
    2N2706
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 51.05KB 1
    2N2706
    Unknown GE Transistor Specifications Scan PDF 42.6KB 1
    2N2706
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 155.12KB 1
    2N2706
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 33.13KB 1
    2N2706
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 86.7KB 1
    2N2706
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 90.48KB 1
    2N2706
    Unknown Vintage Transistor Datasheets Scan PDF 54KB 1
    2N2706MP
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 86.7KB 1
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    2N270 Price and Stock

    CTS Corporation

    CTS Corporation 532N27025CTR

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    CTS Corporation 532N27005ITR

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    CTS Corporation 532N27010CTR

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    CTS Corporation 532N27025ITT

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    CTS Corporation 532N27025ITR

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    2N270 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2N270 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)75m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)60’ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.


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    2n270 PDF

    2n2708

    Contextual Info: 2N2708 Bipolar NPN UHF/Microwave Transisitor 4.90 Transistors UH. 1 of 1 Home Part Number: 2N2708 Online Store 2N2708 Diodes Bipo lar NPN UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at


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    2n2708com/2n2708 PDF

    HS2857

    Abstract: JAN2N0706 JAN2N2484 JAN-TX2N2481 JAN2N2481 HS2369 JANTX2N2481 JANTX2N3057A
    Contextual Info: Microsemi NPN Transistors 2N0744A HS2857 2N0918 HS918 JAN2N0918 JANTX2N0918 JANTXV2N0918 2N2708 2N2708 2N0706 2N0706A JAN2N0706 2N0930 JAN2N0930 JANTX2N0930 , 2N0744 2N4449 JAN2N0744 JAN2N4449 JANTX2N4449 JANTXV2N4449 JANTX2N5793 JANTX2N5794 JANTXV2N5793


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    hs2857jan2n0706jan2n2484jan-tx2n2481+4jan2n2481hs2369jantx2n2481jantx2n3057a PDF

    Contextual Info: 2N2706 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)280m Maximum Operating Temp (øC)100 I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.115 h(FE) Max. Current gain.


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    2n2706 PDF

    Contextual Info: 2N2708 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition)


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    2n2708freq700m PDF

    Contextual Info: 2N2709 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)240m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2n2709freq200kreq200k PDF

    Contextual Info: 2N2707 Transistors Complementary Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)32 V(BR)CBO (V) I(C) Max. (A)200m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    2n2707 PDF

    2N2708+JAN

    Abstract: 2n2708
    Contextual Info: 2N2708+JAN Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)20 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition)


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    2n2708freq700m2n2708+jan PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    2n329a2n3322n3332n334+162n3352n3362n3372n3382n3392n3402n35682n35692n7022n24062n25392n24072n35652n36382n14702n2224 PDF

    2n261 rca

    Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
    Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475


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    2n9972sc982tmmmbt100mmbt200+13mmbt3642mpss545bc8172n261 rca2n301g2n2572n1852n222 motoroladiode s2m2n2772n2442n2432n332a PDF

    BSY55

    Abstract: Scans-00107830 2N2222A zetex BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86
    Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    bsy552n21022n4036scans-00107830+62n2222a zetexbcy562n18932n2405bfx85zt86 PDF

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


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    2n16132n16i3a2n1613b2n17i1+152n17iia2n3725a2n39472n40b02n41372n42072n32982n23602n26942n32082n3212n321din2192n2195b2n2888 PDF

    2N2709

    Abstract: 2N4411 MT1257 DZ9A5 2SA569 u13106 A759A 2SA570 MT1131A SL404
    Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    15om0mt1254mt1255mt1256+12100m5100msmt12572n27092n4411dz9a52sa569u13106a759a2sa570mt1131asl404 PDF

    2N4427 equivalent

    Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    bfs362n930bs9365baw63+14bs9302bfs36a2n929baw63a2n4427 equivalentzt ferranti2n2369 equivalent2n2708bzx88-c4v3diode baw67f025ic marking z7j 2n2369marking g5 PDF

    2N859

    Abstract: 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917
    Contextual Info: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385


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    2n3117to-182n43832n4384+142n43852n4386cbr300000s232n8592n270b2n41352n9152n27082n28652n41342n7212n9162n917 PDF

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


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    00dds7t-a7-012n49712/3s+1530/s92n3725a2n39472n40802n41372n42072n93082n221ba2n69s2n33042m21932ni8932n236s2n4082n238 PDF

    SLVC084C

    Abstract: A6161-X002-80 TL5001 driver circuit for MOSFET dz ZENER DIODE NPN transistor 2n2222 tl5001 applications 2N2222 2N2709 BUZ171
    Contextual Info: Examples of Applications with the Pulse Width Modulator TL5001 Author: Ingrid Kohl Literature Number: SLVAE05 Date: 02/05/98 Contents IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or


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    tl5001slvae05slvc084cslva034a+11tps28xxslvs132cslvd002a6161-x002-80driver circuit for mosfetdz zener diodenpn transistor 2n2222tl5001 applications2n22222n2709buz171 PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149 PDF

    Contextual Info: LT6118 Current Sense Amplifier, Reference and Comparator with POR Features Description Current Sense Amplifier – Fast Step Response: 500ns – Low Offset Voltage: 200µV Maximum – Low Gain Error: 0.2% Maximum n Internal 400mV Precision Reference n Internal Comparator


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    lt6118500ns400mvlt6700+4lt6108lt6119lt61096118f PDF

    2N2708

    Contextual Info: 18A OOÖüi «134693 SEMICOA SEMICOA NPN UHF/VHF SMALL SIGNAL AMPLIFIER SWITCH THEY ARE DESIGNED FOR LOW-NOISE HIGH-FREQUENCY AMPLIFIERS; 1 GHz LOCAL OSCILLATORS; NON-NEUTRAL IZED I-F AMPLIFIERS AND NON-SATURATING CIRCUITS WITH RISE AND FALL TIMES OF LESS THAN 2.5 NANOSECONDS.


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    2n27082n3600fll34b13 PDF

    MRF245

    Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
    Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1


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    cb-403cb-410cb-303cb-4111+16cb-306cb-4071cb-404cb-408cb-40952n6082mrf245pt8828bfy70j0303cm-501sd12382n6096rf transistor s10-122n4932bly94 PDF