2SB172 Search Results

2sd2693

Contextual Info: Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

2sd2693

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features

2sd2693

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features

2sd2693

Abstract: 2SD2693A 2SB1724 2SB1724A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 M Di ain sc te

2sd2693

Abstract: 2SD2693A 2SB1724 2SB1724A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features

2SB1722J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.50)(0.50) 0 to 0.02

2SB1722J

Abstract: SC-89
Contextual Info: Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 0.50 (0.50) 0 to 0.02 • High collector-emitter voltage (Base open) VCEO • SS-Mini type package, allowing downsizing of the equipment and

2SB1722

Abstract: 2SB172
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-frequency amplification • Features ue pl d in an c se ed lud pl vi an m m es

2SB1724

Abstract: 2SB1724A 2SD2693 2SD2693A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/

2sd2693

Abstract: 2SB1724A 2SB172 2SB1724 2SD2693A
Contextual Info: Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Collector-base voltage 2SB1724 Emitter open 2SB1724A Collector-emitter voltage 2SB1724

2SB1721

Abstract: 2SB1721-Z 2sb1721z 2SB172 100VCE
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SB1721 PNP エピタキシアル形シリコン・トランジスタ 高速度スイッチング用 2SB1721 は，IC の出力から直接ドライブできるシリコン・パワー・

2SB1722J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.375) 1.60±0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.50)(0.50) 0 to 0.02

2SD2693A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722G Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification • Package • High collector-emitter voltage (Base open) VCEO • SS-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 1 (0.50)(0.50) 0 to 0.02

2SB1722J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.375) 1.60±0.05

2sd2691

Abstract: 2SC2691 2SB1725
Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Power Transistors 2SD2691A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1725A 4.2±0.2 Unit: mm 10.0±0.2 1.0±0.2 2.5±0.1 13.0±0.2 90° • Features  Wide safe operation area

ic ta 7699

Abstract: 2SB176 2SB172 2SB177 TC 4863 GE PNP ALLOY JUNCTION
Contextual Info: 2 SB17 2 , 2 SB1 76, 2SB177 2SB172, 2SB176, 2SB177 2SB177: PNP ^ /M A IN T E N A N C E PNP Alloy Junction Power Amplifier 4$ ^ /F e a tu r e s • B y^"C 0.4W "fo • 0. 4 W output in class B push-pull amplifier tk'k'M tfk /A b solu te Maximum Ratings (Ta=25°C)

2SC2691

Abstract: 2sc2691a 2SD2691A 2sb1725 2sb172 2SK4072 2SK40 2sd26 2SD2691
Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Power Transistors 2SD2691A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1725A 4.2±0.2 Unit: mm 10.0±0.2 1.0±0.2 Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722G Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification • Features ■ Package • High collector-emitter voltage (Base open) VCEO • SS-Mini type package, allowing downsizing of the equipment and

2SD2693A

Abstract: 2SB1724 2SB1724A 2SD2693
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 15.0±0.5

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the