FP205 Search Results

Contextual Info: O r d e rin g n u m b e r : E N 4 4 9 4 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransistors SAXYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PN P transistor and an NPN tran sisto r in one package, facilitating high-density

Contextual Info: O rdering num ber: EN 4494 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransisto rs SA%YO Push-Pull Circuit Applications Features • Com posite type w ith a PN P tran sisto r and an N PN tran sisto r in one package, facilitating high-density m ounting.

D2493

Abstract: 2097B 2SA1416 2SC3646 FP205 ITR10922 ITR10923
Contextual Info: 注文コード No. N 4 4 9 4 FP205 No. N4494 81000 FP205 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ プッシュプル回路用 ・PNP トランジスタ , NPN トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が

EN4494

Abstract: 2SA1416 2SC3646 FP205 marking 205
Contextual Info: Ordering number:EN4494 FP205 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP205 is composed of 2 chips, one being

transistor C3467

Abstract: A1370 transistor C3467 A1728 c3467 transistor SFCPA B1123 transistor A1370
Contextual Info: SAHYO NEW PRODUCT PCP4/5 series FP series High performance composite type devices suitable for surface mounting which make the sets smaller andlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,

Contextual Info: SA/lYO NEW PRODUCT PCP4/5 series :FPseries l High performance composite type devices suitable for surface mounting which make the sets smallerandlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,

c3807

Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4

FP-221

Abstract: 6648418-1 elcon G437 fp155 1648133-1 FP153 P10S0 1650402-1 6648416
Contextual Info: AMP & ELCON Power Connector Layout Forms Tyco Electronics Corporation Harrisburg, PA tycoelectronics.com 6-1773444-7–2.5M–LUG–FP–10-07 AMP & ELCON Power Connector Layout Forms Table of Contents Disclaimer While Tyco Electronics Corporation and its affiliates referenced herein

C3467

Abstract: SRE 210 B a1370 A1728 C4519 A1338 B1122 C3392 D1622 FP201
Contextual Info: sa iHyo PCP4/5 series :FPseries l High performance composite type devices suitable for surface mounting which make the sets smallerandlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,

c5568

Abstract: C5189 k2951 C5551 D1618 B1119 B1124 B1302 fp21g J56-1
Contextual Info: SAf/YO P C P |:PCP5 Unmarked:PCP V \ CEO !C \ V n A ) \s Type T r a n s i s to r s ♦¡D arlington \ 70 1 0 1 2 1 5 2 0 2 5 3 0 4 0 4 5 5 0 6 0 1 0 0 1 5 0 1 ß 0 2 0 0 2 5 0 4 0 0 C5229 C4673 K2218 C5415 100 K2171 A1575 C4080 FP212# 140 A1415 C3645 150

FP604

Abstract: FP102 FP103 FP104 FP105 FP106 FP200 FP201 FP202 FP203
Contextual Info: ALLIED ELEK & SEHICOND 5. b 2 E D • 052=1221 □ □ □ Q D 2 C1 IflT ■ A L L T 'T- 0 ' S V o Of f f FAST-RECOVERY A X IA L -L E A D SILICON RECTIFIERS Individual Technical Data Sheets Giving Ratings and Characteristic Curve A re Available 5-1. 1 A m pere — Fast — Rcovery Silicon R e c tifier/D O -4 1 Package

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

fp1016

Abstract: FP1008 FP1020 FP2010 FP1006 FP1200 FP1250 FP2275 FP1007 FP1009
Contextual Info: 5bG 701 3 G0Q0323 7 • L U C B ABRIDGED DATA - BIDIRECTIONAL FOLDBACK SUPPRESSORS FP and DFP TYPES LT> 1000 Series 10/1000ns s.c. waveform ru LUCAS STABILITY ELEK LTD VSo V BR nom. V V 5.5 6.05 6.63 7.37 8.10 8.92 9.72 10.5 12.1 12.9 14.5 16.2 17.8 19.4

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249

UP200

Abstract: UP100 FP604 P600 FP-600 Dionix up200 FP305 UP101
Contextual Info: ALLIED ELEK & SEI1IC0ND b2E D • OSS'ISSl GOCmOZB ?t.Q ■ ALLT r - 03-01 1-3. D lO N IX T YP E 1.0 Ampere To 6.0 Amperes F A S T Recovery Silicon Rectifiers 10 A JA 50C BO 100 200 300 400 500 600 800 1000 FW D SU R G E (AI V F (V) @ io IOC) TRR (NS)

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。

FP2000

Abstract: DIODE CQ 521 FP2012A cq 724 g diode FP2000A FP2020 ZD 103 ma FP2006 FP2007 FP-2110
Contextual Info: T - u - z s T R A N S H IE L D S IL IC O N S U R G E S U P P R E S S O R D IO D E S 6.8-275V BREAKDO W N VOLTAGES m KJ ZJ FP2000 & FP20Q0A SERIES m p- tr m a a a Transhield FP2000 and FP2000A surge suppressors are silicon diffused junction devices having bidirectional foldback characteristics. Devices are available having tolerances on the

sb30-03p

Abstract: to-40-070
Contextual Info: Application Example Input Q- ~ T ~ 4A £ KTs -tk Ur TfT -4 n c ko F L }ci> T o, • Electrical Connections C1 C2 FX507 FX508 ■ Device Lineup ♦ Inverter Output Transistors Inverter Block (V) w 2 1 0.7 2 <W) FP211 50 0.8’ 100 FP216 PCP5 TS6472

SBA10Q-O4Y

Abstract: 2SK2439 2SJ40 SK2555 FW106
Contextual Info: • Application Examples Synchronous rectifier Mounted Photos Synchronous Rectifier) ■ Electrical Connections ■ SOP8 Guaranteed Source-Wire Fusing Current I d (A.) ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta = 25 C) Package

d1878

Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258

smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.

CP2075 Ledex LUCAS

Abstract: CP2013 lucas cp2075 CP2130 CP2024 keytek* 424 CP2000 FP2010 sm 0038 CP2075
Contextual Info: LEDEX INC-, LUCAS PRODUCTS ai 81C 0 0 2 2 3 o TRANSHIELD* SILICON SURGE SUPPRESSOR DIODES 9-275V BREAKDOWN VOLTAGES DE | S M 5 3 5 4 3 CP2000& CP2000A SERIES Transhield CP2000 and CP2000A surge suppressors are silicon diffused junction pn devices having bidirectional positive clamping characteristics. Devices are available having