FP305 Search Results

SP*3058

Contextual Info: FP3058 / SP3058 Amplifier Performance Datasheet Cross Reference Guide FP3058 / SP3058* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 450.0 - 950.0 MHz Gain 24.5 dB Typical 23.0 dB Min Noise Figure 3.3 dB Typical

Contextual Info: FP3056 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage56 @I(R) (A) (Test Condition)100u V(RWM) (V) Work.Pk.Rev.Voltage46 I(PPM) Max.(A)Pk.Pulse Current76.0

FD3055

Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Contextual Info: RFD3055, RFD3055SM, FP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

FD3055

Abstract: fp3055 TA49082 IS433 RFD3055
Contextual Info: RFD3055, RFD3055SM, FP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

FD3055

Abstract: Fp3055
Contextual Info: RFD3055, RFD3055SM, FP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

f3055l

Abstract: FP3055LE
Contextual Info: ? *3 2 £ RFD3055LE, RFD3055LESM, FP3055LE 12A, 60V, 0.150 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 12A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

f3055l

Abstract: FP3055LE u603 RFP3055LE TA49158
Contextual Info: RFD3055LE, RFD3055LESM, FP3055LE inter«! D a ta S h e e t N o vem b er 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs F ile N u m b e r 4 0 4 4 .3 Features • 11 A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process

FP3000

Abstract: FP3000A SI 1360 H fp3024 lucas 1030 FP3012,A FP3120 FP3006 ai 937
Contextual Info: The foldback characteristic provides the suppressors with an increased surge current handling capability coupled with lower clamping voltages compared with industrial standard devices. Each device is 100% tested. In the event of an abnormal surge causing the ratings of

f3055l

Abstract: FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A
Contextual Info: RFD3055LE, RFD3055LESM, FP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes

FP604

Abstract: FP102 FP103 FP104 FP105 FP106 FP200 FP201 FP202 FP203
Contextual Info: ALLIED ELEK & SEHICOND 5. b 2 E D • 052=1221 □ □ □ Q D 2 C1 IflT ■ A L L T 'T- 0 ' S V o Of f f FAST-RECOVERY A X IA L -L E A D SILICON RECTIFIERS Individual Technical Data Sheets Giving Ratings and Characteristic Curve A re Available 5-1. 1 A m pere — Fast — Rcovery Silicon R e c tifier/D O -4 1 Package

FD3055

Abstract: IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Contextual Info: RFD3055, RFD3055SM, FP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

f3055l

Abstract: FP3055LE f3055 RFP3055LE
Contextual Info: RFD3055LE, RFD3055LESM, FP3055LE Data Sheet Title FD3 5L, D30 LSM November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes

fd3055

Contextual Info: RFD3055, RFD3055SM, FP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

f3055l

Abstract: f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE
Contextual Info: RFD3055LE, RFD3055LESM, FP3055LE Data Sheet November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs • 11A, 60V Formerly developmental type TA49158. • rDS ON = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve

FD3055

Abstract: Fp3055
Contextual Info: interrii RFD3055, RFD3055SM, FP3055 D a ta S h e e t 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power J u ly 1 9 9 9 F ile N u m b e r 3648.2 Features •

f3055l

Abstract: FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE RFP3055LE
Contextual Info: LOGIC LEVEL POWER MOSFET DATA SHEETS RFD3055LE, RFD3055LESM, FP3055LE S E M I C O N D U C T O R 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 12A, 60V SOURCE DRAIN

UP200

Abstract: UP100 FP604 P600 FP-600 Dionix up200 FP305 UP101
Contextual Info: ALLIED ELEK & SEI1IC0ND b2E D • OSS'ISSl GOCmOZB ?t.Q ■ ALLT r - 03-01 1-3. D lO N IX T YP E 1.0 Ampere To 6.0 Amperes F A S T Recovery Silicon Rectifiers 10 A JA 50C BO 100 200 300 400 500 600 800 1000 FW D SU R G E (AI V F (V) @ io IOC) TRR (NS)

Contextual Info: RFD3055, RFD3055SM, FP3055 Semiconductor Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs File Number 3648.2 Features • 12A, 60V These are N-Channel enhancem ent mode silicon gate • rDS ON = 0.150i2 power field effect transistors. They are advanced power

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

FP3055LE

Abstract: f3055l
Contextual Info: RFD3055LE, RFD3055LESM, FP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:

F3055L

Abstract: FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334
Contextual Info: RFD3055LE, RFD3055LESM, FP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes