2SK1466 Search Results

2SK1466

Contextual Info: Ordering number:EN3469 N-Channel Silicon MOSFET 2SK1466 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. unit:mm 2077A [2SK1466] 3.3 5.0 1.0 26.0 6.0 20.0 2.0 2.0 3.4

2SK1466

Abstract: VDD200V
Contextual Info: Ordering number:EN3469 N-Channel Silicon MOSFET 2SK1466 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. unit:mm 2077A [2SK1466] 3.3 5.0 1.0 26.0 6.0 20.0 2.0 2.0 3.4

tr1007

Abstract: 2SK1466 ITR01679 ITR01680 ITR01681 ITR01682 ITR01683 ITR01684 ITR01685
Contextual Info: 注文コード No. N 3 4 6 9 2SK1466 No. N3469 81199 2SK1466 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗 , 超高速スイッチング。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

GWJ5

Abstract: 2SK1466 200V 50A mos fet so280
Contextual Info: ¡O rd e rin g number: EN3469 2SK1466 No.3469 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON-state resistance. • Very high-speed switching. • Converters. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage

2SK1466

Abstract: 2SK146
Contextual Info: 2SK1466 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 2.16 NLX 4.7E-07 DVT2 -0.01 UB 1.0E-21 AGS 0.68 RDSW 1.38E+05 WINT NFACTOR 0.6 CDSCD PCLM 0.01 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 1.0E-10 CGDL 8.0E-09 CLC

2SK1466

Abstract: 2077U
Contextual Info: 2SK1466 2077 U H U ltra h ig h V o lta g e S e rie s V DSs = 9 0 0 V N Channel Power M OSFET E 3469 Features - Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute Maximum Ratings at Ta = 25°C D rain to Source Voltage Vdss

Contextual Info: • UH Series Lineup Absolute maximum ratings at Ta = 25°C Type No. ftdtage v t» l m Vcss V 2SK1455 2SK1456 «0 P* (A) m 0.2 Electrical characteristics at Ta = 25°C . . Bpsm Clss tVfsl % {«#} typ-ma* mtitom ax typ atVGS = i0V (pF) m m m 30

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SC3953-SPICE

Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f

K1412

Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Contextual Info: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP

NPN Transistor 600V SC-62

Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Contextual Info: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and

2SK1487

Abstract: LM 1495 2sk1477 2SK1486 2SK1480 1494z 2SK1470 2SK1482 2SK1491 2SK1465
Contextual Info: - 106 - M % tt « m £ m it Í V Ì 1 % K £ ft ft « V* V P d /P c h *t* (V) * * ft * (A) (W) Ig s s (max) (A) Vg s (V) (min) (A) (max) V d s (A) (V) (Ta=25°C) ft 4# % (min) (max) V d s (V) (V) (V) £ m (min) (S) Id (A) Vd s (V) Id (A) 2SK1465 HS SW

2sK1413

Abstract: T0220FI Vdss 1500V
Contextual Info: SAftYO POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

Contextual Info: SA/im POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

TT2192

Abstract: sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF
Contextual Info: Ordering number : E I 0 0 9 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.

2SK1411

Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Contextual Info: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0