2SK2623
Abstract: 2SK2623-SPICE 188E-05
Contextual Info: 2SK2623 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 4.26 NLX 1.00E-06 DVT2 -0.01 UB 1.00E-21 AGS -1.00 RDSW 9.41E+04 WINT NFACTOR 1.46 CDSCD 2.0E-05 PCLM 0.00 DROUT 0.84 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 1.00E-14 CGDL
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K2623
Abstract: N Mosfet K2623 2SK2623 TA-2287
Contextual Info: Ordering number:ENN6148A N-Channel Silicon MOSFET 2SK2623 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Low Qg. unit:mm 2083B [2SK2623] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate
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K2623
Abstract: N Mosfet K2623 2SK2623
Contextual Info: 2SK2623 Ordering number : EN6148B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2623 General-Purpose Switching Device Applications Features • • Low ON-resistance. Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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K2623
Abstract: 2SK2623 N Mosfet K2623 TC-00000765 TA-2287
Contextual Info: 2SK2623 Ordering number : EN6148B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2623 General-Purpose Switching Device Applications Features • • Low ON-resistance. Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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K2623
Abstract: N Mosfet K2623 TA-2287 2SK2623
Contextual Info: 2SK2623 注文コード No. N 6 1 4 8 B 三洋半導体データシート 半導体ニューズ No.N6148A をさしかえてください。 2SK2623 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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950822
Contextual Info: 2SK2623 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg Absoulute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current D.C. Drain Current (Pulse)
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2SK2628
Abstract: TS9650 2SK2626 zp 42 2SK2629 V0S8 2SK2630
Contextual Info: Vqss = 600V, N-channel Absolute maximum faflnga atTa = 25°C Type No,* 2SK2623 Pacta « V0S8 m % W 1.5 m Qg *»P ft*F nC) 4.2/5.5 300 45 8 2.0/2.6 550 85 15 1.5/2.0 700 110 20 0.9/1.2 1100 160 30 0.75/1.0 1450 220 35 0.6/0.8 1750 270 45 W 3 TO-220 TS9904
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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ep51ecph6605mch6613ech8609+16cph3424cph3427k3614fw343fw356fw360on line ups circuit diagrams2sk3850242mssfp packagek34923ln03mch3435cph5612three phase on line ups circuit diagramstn6r04
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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2SC3953-SPICE
Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f
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NPN Transistor 600V SC-62
Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Contextual Info: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and
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2SK1731
Abstract: 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2SK2153 2sk2406 2SK1474 2SK1920
Contextual Info: Continued from previous page Absolute maximum ratings Applications M VGSS Id V (A) (W) VDSS Electrical characteristics (Ta • 25 C ) RDSCmO @ ID PD Teh (1C) VGSS (off) (V) ID ■V6S ves (V) & |Yfs| 0 VDS ' ID slif Type Mo. Package type (A) 2SK1474 TP Ultrahigh-speed switching
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2SK2628
Abstract: 2SK2617 2SK2618 2SK2624 2SK2626 2SK2632 2SK2435 2sk2631 2SK2436 2SK2633
Contextual Info: • Application Example . Bridge diode Schottky barrier diode ■ Device Lineup Note: In this pamphlet PNP and P-channel device ratings are shown without a negative sign. ♦ Bridge Diodes Type No. Blocking voltage rank V B E c G Current rating (A) DBB10
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