V0S8 Search Results

2SK2628

Abstract: TS9650 2SK2626 zp 42 2SK2629 V0S8 2SK2630
Contextual Info: Vqss = 600V, N-channel Absolute maximum faflnga atTa = 25°C Type No,* 2SK2623 Pacta « V0S8 m % W 1.5 m Qg *»P ft*F nC) 4.2/5.5 300 45 8 2.0/2.6 550 85 15 1.5/2.0 700 110 20 0.9/1.2 1100 160 30 0.75/1.0 1450 220 35 0.6/0.8 1750 270 45 W 3 TO-220 TS9904

Contextual Info: Preliminary Data Sheet OM6417SP6 OM6419SP6 OM6418SP6 OM642QSP6 POWER MOSFETS AND DIODE IN 11-PIN INDUSTRIAL SIP PACKAGE Full “ H” Bridge With Blocking And Free Wheeling Diodes, 50 To 500 Volts FEATURES • • • • • Ultra Low RDS on Fast Switching

TRANSISTOR BC 814

Abstract: TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257
Contextual Info: . TELEFUNKEN ELECTRONIC file D ^•3 m W I M M electronic Creative Technologies ■ a^BOG^b 00053^2 5 /~ZS~ CFK10 N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with

11-PIN

Abstract: OM6417SP6 OM6418SP6 OM6419SP6 V0S8 mosfet H bridge
Contextual Info: Preliminary Data Sheet OM6417SP6 OM6419SP6 OM6418SP6 OM642QSP6 POWER MOSFETS AND DIODE IN 11-PIN INDUSTRIAL SIP PACKAGE Full “H” Bridge With Blocking And Free Wheeling Diodes, 50 To 500 Volts FEATURES • • • • • Ultra Low RDS on Fast Switching