DBC10 Search Results

MZMA

Abstract: DD25F EFT 308 STM-231 DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

RECTIFIER BRIDGE 25A 600V

Abstract: DBC10 DBC10C DBC10E DBC10G U105 J702 UU105
Contextual Info: Ordering number: EN 3405 DBC10 No.3405 SA\YO i Silicon Diffused Junction Type 1A Single-Phase Bridge Rectifier F e a tu r e s •P lastic molded structure. • Peak reverse voltage : V rm = 200 to 600V • Average rectified c u rren t : lo = 1.0A A b so lu te M ax im u m R a tin g s a t Ta = 25°C

EFT 373

Abstract: D25F10 DBF20E dbf40b DBF40TC DBC10G DBF10E DBF20B DBF20C DBF20G
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

DBC10

Abstract: DBC10C DBC10G sanyo CA
Contextual Info: Ordering number : ENN3405A DBC10 Diffused Junction Silicon Diode DBC10 1A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=1.0A. unit : mm 1241

DBC10

Abstract: DBC10C DBC10E DBC10G
Contextual Info: Ordering number:EN3405 DBC10 Silicon Diffused Junction Type 1A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Peak reverse voltage:VRM=200 to 600V. · Average rectified current:IO=1.0A. unit:mm 1241 [DBC10] Specifications

MZMA

Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

MZMA

Abstract: OC 170 DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

MZMA

Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

PSOC LCD 1289

Abstract: dtmf tranmitter 072ps
Contextual Info: CY8C28243, CY8C28403, CY8C28413 CY8C28433, CY8C28445, CY8C28452 CY8C28513, CY8C28533, CY8C28545 CY8C28623, CY8C28643, CY8C28645 PSoC Programmable System-on-Chip Features • ■ ■ ■ ■ ■ Pull-up, pull-down, high Z, strong, or open-drain drive modes

416B

Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C DBB10C
Contextual Info: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C

416B

Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Contextual Info: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C

DBA40C

Abstract: 416B 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C 638C
Contextual Info: 120 - - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C

416B

Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Contextual Info: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C

Contextual Info: CY8C21345 CY8C22345 CY8C22545 PSoC Programmable System-on-Chip Features • ■ ■ Powerful Harvard-architecture processor: ❐ M8C processor speeds up to 24 MHz ❐ 8 x 8 multiply, 32-bit accumulate ❐ Low power at high speed ❐ 3.0 V to 5.25 V operating voltage

ic max232

Contextual Info: CY8C28xxx TRM CY8C28xxx PSoC Programmable System-on-Chip TRM Technical Reference Manual Document No. 001-52594 Rev. *C September 21, 2009 Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone (USA): 800.858.1810 Phone (Intnl): 408.943.2600

cmp-pwm

Abstract: CY8C22545-24AXI aci230
Contextual Info: CY8C21345 CY8C22345, CY8C22545 PSoC Programmable System-on-Chip • ■ Powerful Harvard Architecture Processor: ❐ M8C Processor Speeds up to 24 MHz ❐ 8x8 Multiply, 32-bit Accumulate ❐ Low Power at High Speed ❐ 3.0V to 5.25V Operating Voltage

CY8C22x45

Contextual Info: CY8C21345, CY8C21645 CY8C22345, CY8C22345H, CY8C22645 Automotive PSoC Programmable System-on-Chip Features Automotive Electronics Council AEC Q100 qualified Powerful Harvard-architecture processor ❐ M8C processor speeds up to 24 MHz ❐ 8 x 8 multiply, 32-bit accumulate

SAR10

Abstract: DCC-02
Contextual Info: CY8C21345, CY8C22345, CY8C22545 PSoC Programmable System-on-Chip • ■ Powerful Harvard Architecture Processor: ❐ M8C Processor Speeds up to 24 MHz ❐ 8x8 Multiply, 32-Bit Accumulate ❐ Low Power at High Speed ❐ 3.0V to 5.25V Operating Voltage ❐ Industrial Temperature Range: -40°C to +85°C

Q100

Abstract: CY8C21x45 mr 504 diode
Contextual Info: CY8C21345, CY8C21645 CY8C22345, CY8C22645 Automotive PSoC Programmable System-on-Chip Features ❐ • Automotive Electronics Council AEC Q100 qualified Powerful Harvard-architecture processor ❐ M8C processor speeds up to 24 MHz ❐ 8 x 8 multiply, 32-bit accumulate

Contextual Info: CY8C28243, CY8C28403, CY8C28413 CY8C28433, CY8C28445, CY8C28452 CY8C28513, CY8C28533, CY8C28545 CY8C28623, CY8C28643, CY8C28645 PSoC Programmable System-on-Chip PSoC® Programmable System-on-Chip™ Features • ■ ■ ■ ■ ■ Pull-up, pull-down, high Z, strong, or open-drain drive modes

DBC-02

Contextual Info: CY8C21345, CY8C22345, CY8C22545 PSoC Programmable System-on-Chip • ■ Powerful Harvard Architecture Processor: ❐ M8C Processor Speeds up to 24 MHz ❐ 8x8 Multiply, 32-Bit Accumulate ❐ Low Power at High Speed ❐ 3.0V to 5.25V Operating Voltage

CY8C22x45

Abstract: CY8C24xxx max232 tx A367 BC307
Contextual Info: TRM CY8C22x45 CY8C21345 PSoC Programmable System-on-Chip Technical Reference Manual TRM PSoC TRM, Spec. # 001-48461 Rev. *A December 5, 2008 Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone (USA): 800.858.1810 Phone (Intnl.): 408.943.2600

Contextual Info: CY8C21345, CY8C21645 CY8C22345, CY8C22345H, CY8C22645 Automotive PSoC Programmable System-on-Chip Automotive PSoC ® Programmable System-on-Chip™ Features Automotive Electronics Council AEC Q100 qualified Powerful Harvard-architecture processor ❐ M8C processor speeds up to 24 MHz

SAR10

Abstract: cy8c28000 cy8c28000-24pvxi BA RW CY8C28452-24PVXI CY8C28403-24PVXI transistor BA RW 85Y12 ae rw CY8C27443-24PXI
Contextual Info: CY8C28243, CY8C28403, CY8C28413 PRELIMINARY CY8C28433, CY8C28445, CY8C28452 CY8C28513, CY8C28533, CY8C28545 CY8C28623, CY8C28643, CY8C28645 PSoC Programmable System-on-Chip Features • Varied Resource Options Within One PSoC Device Group ■ Powerful Harvard Architecture Processor