DD25F Search Results

Contextual Info: DIODE MODULE DD25F/KD25F UL;E76102 M Power Diode Module D D 2 5 F series are designed for various rectifier circuits. D D 2 5 F has two diode chips connected in series in 25 mm (linch) width package and the mounting base is electri­ cally isolated from elements for simple heatsink construction.

DD25E-140

Abstract: B2j diode DD25F DD25F-100 DD25F-120 DD25F-40 DD25F-60 case symbol B03 diode
Contextual Info: SANSHA ELECTRIC MFG CO 37E D n 7^1343 DIODE MODULE OOOOMO S Ö S E M J L 7 SanRex Power Diode Module DD25F series are designed for various rectifier circuits. DD25F has two diode chips connected in series in 25 mm 1 inch width package and the mounting base is electrically isolated -from elem ents for simple heatsink construction.

Contextual Info: SANSHA ELECTRIC MFC CO 37E D H DIODE MODULE 7 ^ 1 3 4 3 000Q0T0 5 raSEMJL 7 ' f ' 2 ' 5 ’ 0 '7 SanRex P ow e r Diode Module DD25F series are designed for various rectifier circuits. DD25F has tw o diode chips connected in series in 25 mm 1 inch width package and the

DD25F

Abstract: DD25F120 DD25F160 DD25F40 DD25F80
Contextual Info: DIODE MODULE DD25F/KD25F UL;E76102 （M） Power Diode Module DD25F series are designed for various rectifier circuits. DD25F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

"Power Diode"

Abstract: DD25F DD25F120 DD25F160 DD25F40 DD25F80 DIODE PH AV 20
Contextual Info: DIODE MODULE DD25F/KD25F UL;E76102 （M） Power Diode Module DD25F series are designed for various rectifier circuits. DD25F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

HALF WAVE RECTIFIER CIRCUITS

Abstract: three phase half wave Rectifier DD25F DD25F120 DD25F160 DD25F40 DD25F80
Contextual Info: DIODE MODULE DD25F/KD25F UL;E76102 M Power Diode Module DD25F series are designed for various rectifier circuits. DD25F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

MZMA

Abstract: DD25F EFT 308 STM-231 DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

EFT 373

Abstract: D25F10 DBF20E dbf40b DBF40TC DBC10G DBF10E DBF20B DBF20C DBF20G
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

Contextual Info: S i GEC P L E S S E Y PRELIMINARY INFORMATION S E MI CO NDU CT O RS KESTX01 400MHz - 460MHz ASK TRANSMITTER The KESTX01 is a single chip ASK Amplitude Shift Key transmitter IC. It is designed to operate in a variety of low power radio applications including keyless entry, general

MZMA

Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

MZMA

Abstract: OC 170 DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

Contextual Info: bbSa^El ODETBbM 404 « A P X Philips Semiconductors Product specification HF/VHF power MOS transistor — BLF175 N AMER PHILIPS/DISCRETE FEATURES b'JE D PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

DD200KB160

Abstract: DD100KB160 DD240KB160 DD160KB160 DG20AA DG20AA120 DG20AA160 DG20AA40 DG20AA80 3-element diode
Contextual Info: DIODE ISOLATED MOLD TYPE DG20AA UL;E76102 （M） DG20AA is a medium power isolated module diode suitable for wide range of industrial and home elctronics use. DG20AA is highly reliable by glass pasivation. 39.2 MAX 20.2 MAX 2-φ4.2±0.1 ● IF （AV） ＝20A,

MARKING CODE SMD IC

Abstract: BoN SOT-23 smd transistor marking PA DD25 PMBT3904
Contextual Info: • bbSBTBl 0025flb3 N AMER PHILIPS/DISCRETE ■ APX PMBT3904 b7E D SILICO N EPITAXIAL T R A N SISTO R S N-P-N transistors in a m icrom iniature S M D plastic envelope intended fo r surface m ounted applications. T h e y are prim arily intended fo r use in telephony and professional com m unication equipment.

MZMA

Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E