T0220FI Search Results

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

2SC3953

Abstract: TRANSISTOR T0220 2SC3597
Contextual Info: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)

Contextual Info: I Ordering number:EN 3688 2SC4710 No.3688 NPN Triple Diffused Planar Silicon Transistor 2100V/10mA High-Voltage Amp, High-Voltage Switching Applications ; Features •High breakdown voltage Vceo min = 2100 V . • Small Cob (typical Cob = 1.3pF). • Wide ASO.

2SC4630LS

Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Contextual Info: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

2sc4710

Contextual Info: S4ÜV0 T r a n s i s t o r s for V e r y H i g h - D e f i n i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t Use 3 otc D y n a m i c s F o c u s U s e (No picture ever out of focus with better focus c h a r a c t e r i s t i c s )

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SJ32C

Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Contextual Info: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

Contextual Info: Ordering number: EN4287A 2SK2045 N0.4287A N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications F eatures • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode built in tn- = 140ns . • Micaless package facilitating easy mounting.

sanyo transistor tt series

Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Contextual Info: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.

DD54

Abstract: DD54RC
Contextual Info: Ordering number:EN4405A No.4405A SAPfYD i _ DD54RC Silicon Diffused Junction Type Damper Diode for Ultrahigh-Defmition Display Applications F eatures • High breakdown voltage Vrrm ; 1500V . • High reliability. • One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

DD54SC

Contextual Info: O rd e rin g n u m b e r .E N 5122A N 0 .5 I 2 2 A _Silicon DiffusedDD54SC Junction Type Damper Diode for Ultrahigh-Defxnition Display Applications Features • High breakdown voltage Vrrm : 1600V . • High reliability. • One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.

C4106 transistor

Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Contextual Info: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower

F527S

Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
Contextual Info: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.

Contextual Info: SAtfYO P o w e r S c h o t t k y B a r r i e r D i o d e s For L a r g e - S i g n a l Use Sanyo Schottky barrier diodes (SBD) have been developed by our original technology. They are available for making sets smaller in size and lighter in veight. Sanyo power SBDs with breakdown voltages of 50V, 90V and 180V can be applied to various uses.

High-speed switching

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 25 hFE@VCE • 1C VCBO (V VCE0 (V) W 1C (A) PC (W) (? ) hFE VCE (V) V) f r e v c E ' 1C 1C (A) fr (MHz) VCE (V) Ic (A) tf(toff) max

2SK1460

Contextual Info: 2SK1460 2078 U H U l t r a h i g h V o l t a g e S e rie s V Dss = 9 0 0 V N Channel Power MOSFET E 3463 F e a tu r e s • Low ON-state resistance. •Very high-speed switching. - Converters. - Micaless package facilitating mounting. A b s o lu te M a x im u m R a tin g s a t Ta = 25°C

NPN Transistor 600V SC-62

Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Contextual Info: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and

2SC3253

Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Contextual Info: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t

TRANSISTOR 2SD2627

Abstract: TO220FI-LS 2sd2627 TO-220FI-LS 6aj6a ENN6478
Contextual Info: Ordering num ber: ENN6478 NPN Triple Diffused Planar Silicon Transistor 2SD2627 Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltageCVCBO^ 1500V . High reliability Adoption o f HVP process).

Contextual Info: SA0YO SANYO Discrete Device Package Out 1ines unit:mm Large-Signal Transistors Smal1-Signal Transistors SMP, SMP-FD, T0-220, T0-220ML, T0-220FI (LS), T0-220MF, T0-3PB, T0-3PML, T0-3PBL, T0-3JML. Outlines SMCP, MCP, CP, CP4/5/6, PCP, PCP4/5, XP5/6, TP, TP-FA, MFP6,

2SA1829

Abstract: 2SC3790 p7060 2SC5291 T0-126ML 2SA1371 2SC4732 e1aj SANYO CP5 transistor 2sc3788
Contextual Info: Transistors for TV Display Video Output Use F e a t u r e s » E x c e lle n t HF c h a r a c t e r i s t i c . * Small re v e rse t r a n s f e r c ap a c ita n c e . * Complementary PNP and NPN types. ♦ Adoption o f MBIT, FBET p ro c e sse s. * H ighly r e s i s t a n t to d i e l e c t r i c breakdown.

2SD1213

Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
Contextual Info: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .