2SC55 Search Results

2SC5563

Contextual Info: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Absolute Maximum Ratings (Tc = 25°C) Characteristics

c5550

Abstract: 2SC5550
Contextual Info: 2SC5550 東芝トランジスタ シリコンNPN三重拡散形 2SC5550 ○ インバータ照明用高速スイッチング 単位: mm • RCC 回路に最適 小電流のときに hFE を保証しています。 : hFE = 13 (最小) (IC = 1 mA) • 高速です。

C5562

Abstract: 2SC5562
Contextual Info: 2SC5562 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5562 Switching Regulator and High-Voltage Switching Applications DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 0.7 s max tf = 0.5 μs (max), (IC = 0.3 A) • High breakdown voltage: VCEO = 800 V

C5562

Abstract: 2SC5562
Contextual Info: 2SC5562 東芝トランジスタ シリコンNPN三重拡散形 2SC5562 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • スイッチング時間が速い。 : tr = 0.7 s 最大

2SC5549

Abstract: SC-65
Contextual Info: 2SC5549 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5549 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuits. guaranteed small current hFE • High speed: tr = 0.5 s (max), tf = 0.3 μs (max) (IC = 0.24 A)

2SC5570

Abstract: 2SC5570 equivalent 2SC557
Contextual Info: 2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage Unit: mm : VCBO = 1700 V Low Saturation Voltage : VCE sat = 3 V (Max.)

2SA2015

Abstract: 2SA20 IT00202 2SC5568
Contextual Info: Ordering number:ENN6308 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions • Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2015/2SC5568] · Adoption of MBIT processes.

2sc5587

Abstract: transistor 2sc5587 2SC558 2SC5587 equivalent 2-16E3A
Contextual Info: 2SC5587 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5587 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage Unit: mm : VCBO = 1500 V Low Saturation Voltage : VCE sat = 3 V (Max.)

2SC5543

Abstract: DSA003643
Contextual Info: 2SC5543 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-690 Z 1st. Edition Oct. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 Note: Marking is “YA-”. 1. Emitter

2sc5588

Abstract: 2SC558 2-16E3A
Contextual Info: 2SC5588 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5588 Unit: mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage

YH 388

Abstract: 828 npn 2SC5554 DSA003643
Contextual Info: 2SC5554 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-692 Z 1st. Edition Oct. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 Note: Marking is “YH-”. 1. Emitter

Contextual Info: TOSHIBA 2SC5548 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5548 SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • : tr = 0.5 /us Max. , tf = 0.3 p.s (Max.) (1(3 = 0.8 A) High Collector Breakdown Voltage : V^EO = 370 V

transistor zo 607

Abstract: MARKING LN4 ZO 607 MA 2SC5501A ic 747 zo 607 738.55 29572
Contextual Info: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).

2SC5557

Contextual Info: Transistor 2SC5557 Silicon NPN epitaxial planar type Unit: mm For low-noise RF amplifier 0.10+0.05 –0.02 0.33+0.05 –0.02 0.80±0.05 5˚ • High transition frequency fT • High gain of 8.2 dB and low noise of 1.8 dB at 3 V • Optimum for RF amplification of a portable telephone and pager

Contextual Info: Reliability Tests Report Product Name: 2SC5548A Package Name: New PW-Mold 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SA2016

Contextual Info: 2SA2016 / 2SC5569 Ordering number : EN6309C SANYO Semiconductors DATA SHEET 2SA2016/2SC5569 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • • •

C5548

Abstract: 2SC5548
Contextual Info: 2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed switching: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) •

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UML2N Features • • • • 2SC5585 and RB521S-30 are housed independently Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: T O S H IB A 2SC5570 TO SH IB A TRA N SISTO R SILICON NPN TRIPLE D IFFU SED M ESA TYPE 2SC5570 H O RIZO N TAL D EFLECTIO N O U TPU T FO R SUPER HIGH RESO LU TIO N CHARACTERISTIC SYMBOL Collector Cut-off Current !CBO Emitter Cut-off Current Ie b o Colleetor-Emitter Breakdown

HITEC 623

Abstract: Hitachi DSA002752
Contextual Info: 2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 Z 1st. Edition Jan. 1, 1999 Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline MPAK-4

2SC5589

Abstract: 2Sc5589 equivalent FH100 1500Vl
Contextual Info: 2SC5589 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5589 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage Unit: mm : VCBO = 1500 V l Low Saturation Voltage : VCE sat = 3 V (Max.)

2SC5563

Contextual Info: TO SH IBA TENTATIVE 2SC5563 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SC5563 High Voltage : V^ e q - 1500 V Small Collector Output Capacitance : C0b = 2.0 pF Typ. iV n n = 1 00 V'l MAXIMUM RATINGS (Ta = 25°C)

Hitachi DSA002756

Contextual Info: 2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-693 Z 1st. Edition Nov. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline Note: Marking is “ZD-”. 2SC5555 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-nolse, hlgh-gain amplification applications • N F = 1.1 dB,