2SC5557 Search Results
2SC5557 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SC5557Contextual Info: Transistor 2SC5557 Silicon NPN epitaxial planar type Unit: mm For low-noise RF amplifier 0.10+0.05 –0.02 0.33+0.05 –0.02 0.80±0.05 5˚ • High transition frequency fT • High gain of 8.2 dB and low noise of 1.8 dB at 3 V • Optimum for RF amplification of a portable telephone and pager |
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2sc5557 | |
2SC5557Contextual Info: Transistor 2SC5557 Silicon NPN epitaxial planar type Unit: mm For low-noise RF amplifier 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ M Di ain sc te on na tin nc ue e/ d • High transition frequency fT • High gain of 8.2 dB and low noise of 1.8 dB at 3 V • Optimum for RF amplification of a portable telephone and pager |
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2sc5557 | |
2SC5557Contextual Info: Transistor 2SC5557 Silicon NPN epitaxial planar type Unit: mm For low-noise RF amplifier 0.33+0.05 –0.02 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C Rating Unit Collector to base voltage |
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2sc5557 | |
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
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responsibilixp08081xp08546xp0a554xp0d873+13 | |
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
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xp06501txp06531xp06545xp0a554+13 |