C5550 Search Results

c5550

Abstract: 2SC5550
Contextual Info: C5550 東芝トランジスタ シリコンNPN三重拡散形 C5550 ○ インバータ照明用高速スイッチング 単位: mm • RCC 回路に最適 小電流のときに hFE を保証しています。 : hFE = 13 (最小) (IC = 1 mA) • 高速です。

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

ISL9504

Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

c5586

Abstract: c5679 C5694 c5487 47N253 c5664 c5598 c5717 C5488 ez 4r 823
Contextual Info: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-10 - ODEM 11-14 - DDR 15-18 - ATI_M10_P 19-20 - VGA DDR 21 -LCD&TV CONNECTOR INTERFACE 22- CRT INTERFACE 23-25- ICH4-M

3072F

Abstract: YM45044 P-MSHA-C-7K-1827
Contextual Info: 3072F Twinax - DataTray 600V Twinaxial Cable For more information please call 1-800-Belden1 See Put-ups and Colors Description: 18 AWG stranded 7x26 tinned copper conductors, flame-retardant polyolefin insulation, overall Beldfoil® (100% coverage) plus a tinned

rcc circuit

Abstract: 2SC5550 c5550
Contextual Info: C5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type C5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit guaranteed small current hFE • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)

c5550

Abstract: rcc circuit
Contextual Info: C5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type C5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit guaranteed small current hFE • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)

Contextual Info: C5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type C5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit guaranteed small current hFE • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)

c5550

Abstract: 2SC5550 rcc circuit
Contextual Info: C5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type C5550 High-Speed Switching Application for Inverter Lighting System • Unit: mm Suitable for RCC circuit guaranteed small current hFE : hFE = 13 (min) (IC = 1 mA) • High speed: tr = 0.5 s (max), tf = 0.3 μs (max) (IC = 0.24 A)

temic 0675 d4

Abstract: temic 0675 c9 TFK 404 telefunken transistor Temic IDIC chip 5551 preliminary schematic diagram pioneer amplifier sa 9800 7-segment display tfk 308 temic 0675 d1 atmel e5550 AEG PS 451
Contextual Info: General Information R em ote Control Identification Systems M icrocontrollers Addresses Temic S e m i c o n d u c t o r s General Information Alphanumeric Index T y p e . T y p e . e5530 10, 300 TK5550F-PP

d7810

Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED

MCP79MXT-B3

Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE

ISL9504

Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
Contextual Info: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

ISL9504

Abstract: ISL9504B M75 MLB 820-2101 PP3V42G3H C8550 c7381 N8242 c5855 ISL9504 U7500 c3334 schematic diagram
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

c2240 transistor

Abstract: c5129 c5088 C2335 C5936 c2166 transistor c2335 r c2165 C5928 datasheet c2240 transistor
Contextual Info: REJ10B0161-0100 H8S, H8/300 Series C/C+ Compiler, Assembler, Optimizing Linkage Editor Compiler Package Ver.6.01 User’s Manual Renesas Microcomputer Development Environment System Rev.1.00 Revision Date: Jan. 12, 2005 Keep safety first in your circuit designs!

ISL6258

Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE

e3 sot363 8pin

Abstract: ISL9504 PP3V42G3H C8050 R5370 "cross reference" k50 apple NVIDIA G84m p66 apple M75 MLB 820-2101 051-7225
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

2SC5550

Abstract: c5550
Contextual Info: C5550 東芝トランジスタ シリコンNPN三重拡散形 C5550 ○ インバータ照明用高速スイッチング 単位: mm • RCC 回路に最適 小電流のときに hFE を保証しています。 : hFE = 13 (最小) (IC = 1 mA) • 高速です。

r4363

Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED

PP3V42G3H

Abstract: apple J8000 ISL9504 NVIDIA G84m C4740 p66 apple C8050 apple computer ad30 ok 1500 3p3 C7103
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD SCHEM,MLB,MBP15 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 04/24/2007

TP2801

Abstract: slg8sp513v diode tp806 RTM875N-606-VD-GR C5855 rtm875n-606 RTL8103 92HD81B1X5 ST330U2D5VDM-13GP 1SMB22AT3G-GP-U
Contextual Info: 5 4 3 2 1 D D Alba Discrete ATI M92-LP gDDR2 Schematics uFCPGA Mobile Penryn Intel Cantiga-PM + ICH9M C C 2009-03-23 REV : SA B B DY : Nopop Component GM : Pop when Cantiga is GM PM : Pop when Cantiga is PM G/P : BOM control if Cantiga is PM A A <Core Design>

ISL9504

Abstract: pg65d U8550 SH0925 DP431 U8500 j4310 vishay CK 67A PP3V42G3H 338S0432
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15" MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

C5473

Abstract: *c5586 C5630 c5586 Inventec C5679 c5470 23D14 CN503 C5244
Contextual Info: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-10 - ODEM 11-14 - DDR 15-18 - ATI_M10_P 19-20 - VGA DDR 21 -LCD&TV CONNECTOR INTERFACE 22- CRT INTERFACE 23-25- ICH4-M