2SK858
Contextual Info: FIELD E F F E C T T R A N S IS T O R SILICO N N CH A N N EL M O S T Y P E ff-MOSii 2SK858 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 03.6±O .2 r1 0.3 MAX. - DRIVE APPLICATIONS.
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2SK1118
Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531
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2sk15292sk15302sk3572sk358+122sk5252sk5262sk5322sk3872sk5722sk5782sk11182sk1513to-3p2sk17232sk790p-channel fet to-220
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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bce0017b2sk20562sk16032sk1603 datasheet+7toshiba "ultra high speed" diode 1atransistor 2sk16032sk3561 equivalent2sk2915 equivalent1045y2sk3569 equivalent2sk1078
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06spb32n03lrfp60n06ssh6n80fqp50n10fsd6680stp55nf06 and its equivalentsfp70n03hgtg*n60a4dirf630 irf640
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-sepstr-g6551str-f6654g6551+7tda16822str-f6653strg6551igbt cross referenceka5m0565rtop224y equivalentbup 312
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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bce0017fe-28831bce0017g2sk3567 equivalent+92sk3569 equivalenttpca*8023tk8a50d equivalent2sk20562sk3878 equivalenttpca80232sk941 equivalent2sk3561 equivalent2sk1603
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2SK1649
Abstract: 2SK537 2SK1349 2SK1377 2sk538 2SK788 2SK1513 2SK1723 2SK889 2SK941
Contextual Info: Power MOS FET Lineup [Characteristics Chart] 6. L2-7T-M0S III V dss = 60— 10OV type Low Voltage Series Operable at Logic Level. Maximum ratings (A) 0.8 0.8 5 -5 Voss (V) Package Pd (W) Ros(ON) (Q) Vos (V) TYP. MAX. 60 0.5 POWER-MINI 0.40 0.55 10 60 0.9 TO-92MOD
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2sk10782sk9402sk11122sj183+162sk11142sk13442sk17682sk11152sk13452sk9422sk16492sk5372sk13492sk13772sk5382sk7882sk15132sk17232sk8892sk941
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2SK2056
Abstract: 2SK2056 equivalent 2SK1117 2SK2107 2SK1855 2SK1915 2sk1722 2SK1119 equivalent 2SK1719 2SK1574
Contextual Info: Power MOS FET Lineup [Characteristics Chart] 8. Mew Product Small Package [a] TO-220 F L /S M For use in a variety of comact, thin, lightweight equipment, the lineup features a new package with TO -220 class ratings and a com pact exterior that can be surface-mounted.
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o-220t0-2202sj2242sj312+152sj2412sk23112000pcs2sk22282sk22292sk20562sk2056 equivalent2sk11172sk21072sk18552sk19152sk17222sk1119 equivalent2sk17192sk1574
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mg15g1al3
Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673
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2sj1152sj1232sj1472sk357+162sk3582sk3852sk3862sk3872sk3882sk405mg15g1al3mg400h12sk11242sk7912sk525mp61012sk5312sk6742sk6732sk405 2sj115
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2SK3566 equivalent
Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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bce0017es-167bce0017f2sk3566 equivalent+92sk3562 equivalent2sk3561 equivalent2sk3878 equivalent2sk3568 equivalent2sk3911 equivalent2sk941 equivalenttpc8118 equivalent replacementtpc81182sk3767 equivalent
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2SK1603
Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
Contextual Info: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1
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bce0017a2sk16032sk3561 equivalentun 1044+72sj2382sk1603 datasheet2sk20392sk20302sk20562sk14872sk1078
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2SK847
Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
Contextual Info: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247
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2sk696o-2472sk7192sk696a+13o-205ad/to-392n33742n33522sk8472n33052sk7342n2807a2n29702n29682n27092sk7332n29712sk794
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2SK2056
Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Contextual Info: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII
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2sj147o-220is2sj1832sj200+162sj2012sj224o-220fl/sm2sj2382sj2392sj2402sk20562sk16032sk17232sk1377transistor 2sk16032sk21462sk2351mosfet 2sk1357transistor 2sk12132sk2402
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MG100g2ys1
Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series
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eg50n2ys9g15n2ysimg25n2ys1mg50n2ys1+16g35q2ysimg25q2ys1mg50q2ys1mg25s2ys1g25n1js1g50n1js1mg100g2ys1mg25q6es1mg100j2ys1ytf830gt25q103gt15h101toshiba mg50n2ys9mg200j2ys1mg75n2ys1mg75j2ys1
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2SK847
Abstract: 2SK846 2SK851 2SK850 2SK852 2SK842 2SK841 2SK858 2SK843 2SK848
Contextual Info: - 72 - f s ffl it € ü m V* K V 1/ MOS îs m o !* m N të 'Æ: m 1 £ * 40 DSS (V) a * ±20 (A) 371 m X P d /P ch Ig s s (max) & * (W) (A) 2 D Vg s (V) W (min) (max) Vd s (A) (A) (V) « (Ta=25cC) 14 (min) (max) Vd s (V) (V) (V) gm (min) (S) Id (A)
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2sk8402sk8412sk842zsk843+132sk8442sk8452sk846ftg2sk11242sk85780nstyp2sk8472sk8512sk8502sk8522sk8582sk8432sk848
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k2038
Abstract: K1357 K 1357 k1363 K2077 K1349 K1356 K1574 K2039 K2222
Contextual Info: Power MOS FET Lineup Vdss = 60 ~ 200 V Voss (V) Id (A) S eriea lineup ir-M OS II ff-MOS L2-s*M OS III 0.8 1.0 2.0 T 2 S K 1 112(0.16) ▼ 2SJ183(0 35) 5 .0 •2S K 6 72(0.2) ♦ 2 S J 147 (0.20) O 2SJ224(0.2) ♦ 2 S K 5 3 2 (0.085) 10 12 O2SJ238(0.85) >2SK1717(0.35)
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2sj1832sk1078o2sj2382sk1717+162sk17192sj239i02sj3152sj36o2sk22312sj377k2038k1357k 1357k1363k2077k1349k1356k1574k2039k2222
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2SK2056
Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Contextual Info: [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.
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2sk22352sk20572sk34622sk2837+162sk27412sk22312sk27422sk20772sk27462sk14872sk20562sk16032sk13772sk5372sk17232sk1213transistor 2sk16032sk1603 datasheet2sj2392sk2352
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fqp60n06
Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06ssh6n80spb32n03lsmp60n03-10lssp80n06airf540 applicationrfp60n06fsd9933a2sk790irfz30
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2sk1603
Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378
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2sj1152sj1232sj1262sj147+162sj1832sj2002sj2012sj2242sj2382sj2392sk16032sk22362sk17232sk22222sk5382sk180s2sk5842sk18822sk15132sk1915
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2SK1603
Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
Contextual Info: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and
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3515c-0202f-935612sk16032sk2056+82sk13772sk13492sk24022sk11172sk1213transistor 2sk16032sk4232sk1855
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2sK2750 equivalent
Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Contextual Info: 2004-3 PRODUCT GUIDE Power MOSFETs semiconductor 2004 http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structure .4 3. TFP Series .18 - 21
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o-220sisbce0017a2sk2750 equivalentequivalent 2sk2698 mosfet+82sk16032sk2996 equivalent2sk3569 equivalent2sk20562sk3565 equivalentmosfet 2sk1358 transistor guide2sk3567 equivalent2sj238
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