2sk1348
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1348 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel M OSType L2-it-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive
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2SK1348
Contextual Info: TO S H IB A 2SK1348 :iel<i E f fe c t ' r r sisto r iilicon N C h a n n el M O S Type L2-7t-MOS III ligh Speed, High Current D C -D C Converter, le<ay Drive and M otor Drive A p p lica tio n s ! e a tu re s •- Gal 1 1 r ' t 4 V >lt • Lov Drair S a c ; ON Resistance
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2sk1348 |
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2sj239
Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]
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2sk11122sk17192sj2392sk2030+122sk1079te12l2sk10782sj2382sk11182sj239lb2sk1717k11192sk13802sk9452sk1913t0220fl
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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bce0017b2sk20562sk16032sk1603 datasheet+7toshiba "ultra high speed" diode 1atransistor 2sk16032sk3561 equivalent2sk2915 equivalent1045y2sk3569 equivalent2sk1078
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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bce0017fe-28831bce0017g2sk3567 equivalent+92sk3569 equivalenttpca*8023tk8a50d equivalent2sk20562sk3878 equivalenttpca80232sk941 equivalent2sk3561 equivalent2sk1603
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2SK1348
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSni HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. OC-DC CONVERTER,RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • 4-Volt Gate Drive • Low Drain-Source ON Resistance : R DS(0N)=0.068Q (Typ.)
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2SK1649
Abstract: 2SK537 2SK1349 2SK1377 2sk538 2SK788 2SK1513 2SK1723 2SK889 2SK941
Contextual Info: Power MOS FET Lineup [Characteristics Chart] 6. L2-7T-M0S III V dss = 60— 10OV type Low Voltage Series Operable at Logic Level. Maximum ratings (A) 0.8 0.8 5 -5 Voss (V) Package Pd (W) Ros(ON) (Q) Vos (V) TYP. MAX. 60 0.5 POWER-MINI 0.40 0.55 10 60 0.9 TO-92MOD
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2sk10782sk9402sk11122sj183+162sk11142sk13442sk17682sk11152sk13452sk9422sk16492sk5372sk13492sk13772sk5382sk7882sk15132sk17232sk8892sk941
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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o220abo-126j2y transistort15j10+8mp4704mg100m2ck12sb834mp3103mg50j6es91mp3002mp45052sc497
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2SK1377
Abstract: 2SK1349 2SK1357 2SK1356 2SK1373 2SK1333 2sk1346 2SK1375 2SK1348 2SK1351
Contextual Info: f m it e m £ H y & tit Ü % K 2SK1333 X % V* V * ft (V) Motor-D, DDC MOS N B 500 DSS ±20 S SW-Reg, DDC MOS N E 200 DSS ±20 BÍL SW-Reg, DDC MOS N E 200 DSS ±20 BÍL Motor/Relay-D MOS N E 60 DSS ±20 2SK1337 BÎL Motor/Relay-D MOS ±20 BÎL SW-Reg, DDC
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2SK2056
Abstract: 2SK1349 2SK1603 2sk1601 2SK1363 2SK1344 2SK1768
Contextual Info: Power M O S FET jt-MOS I!-5 F1 Maximum Rating Application A C 2 2 0 V Input Switching Power Supply Type No. R d s (ON)(£l) Package •2SK2274 2SK1602 2SK1600 2SK1858 2SK2056 2SK2089 2SK2038 2SK2222 2SK2077 2SK2319 2SK2078 2 SK 2 3 2 0 2SK1603 2SK1601 2SK1643
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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2SK3566 equivalent
Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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bce0017es-167bce0017f2sk3566 equivalent+92sk3562 equivalent2sk3561 equivalent2sk3878 equivalent2sk3568 equivalent2sk3911 equivalent2sk941 equivalenttpc8118 equivalent replacementtpc81182sk3767 equivalent
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2SK1603
Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
Contextual Info: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1
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bce0017a2sk16032sk3561 equivalentun 1044+72sj2382sk1603 datasheet2sk20392sk20302sk20562sk14872sk1078
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2sk4110
Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3
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bce0017ds-167bce0017e2sk4110+92sk41062sk41112sk3561 equivalent2sk3797 equivalent2sk2996 equivalent2sk2843 equivalent2sk2961 equivalent2sk41122sk3799 equivalent
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2SK2056
Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Contextual Info: [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.
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2sk22352sk20572sk34622sk2837+162sk27412sk22312sk27422sk20772sk27462sk14872sk20562sk16032sk13772sk5372sk17232sk1213transistor 2sk16032sk1603 datasheet2sj2392sk2352
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2sk1603
Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378
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2sj1152sj1232sj1262sj147+162sj1832sj2002sj2012sj2242sj2382sj2392sk16032sk22362sk17232sk22222sk5382sk180s2sk5842sk18822sk15132sk1915
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2SK1348
Contextual Info: n S S' -* Si V > Bn rn » • k V ÎÂ ni H d 8 ? ri » 3! un » 50 sr sr 1 u ÏH S■ O sr 1 o CTi co j* en te U1 M- o° \ o° \ Si $f m □»h eu 3 5 1 m s# n. tu 1 n ffil 1-3 o V H O II to en o° *0 ü Ö O V y U *d O sS iS ï X A < m 1 33 M 5m ITlât
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2SJ239
Abstract: 2SK2030 2SJ201Y 2sk1 2SK2057 2SK2200TP 2sk1544 2SJ201-Y 2SK1079 2SJ238
Contextual Info: MOSFET Characteristic Chart M axim u m R ating Id |Am ps| V oss [Volts] R d s ON Pd [W atts] TYP. [Ohm s| M AX. lO hm sI V qs [Volts] Id [Amps] Vtn (Volts] | ID - 1 mA] A p plicatio n DC/DC converter 2SJ147 T0-220(IS) -12 -60 40 0.17 0.2 -10 -6 -1.5 ~ -3.5
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2SK1603
Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
Contextual Info: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and
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2sK2750 equivalent
Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Contextual Info: 2004-3 PRODUCT GUIDE Power MOSFETs semiconductor 2004 http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structure .4 3. TFP Series .18 - 21
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o-220sisbce0017a2sk2750 equivalentequivalent 2sk2698 mosfet+82sk16032sk2996 equivalent2sk3569 equivalent2sk20562sk3565 equivalentmosfet 2sk1358 transistor guide2sk3567 equivalent2sj238
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