2SK185 Search Results

2SK1341

Abstract: 2SK1859 DSA003759
Contextual Info: 2SK1859 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3PFM D G 1 S 2 3 1. Gate 2. Drain

Contextual Info: 2SK1859 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low Drive Current • No secondary breakdown • Suitable for Switching regulator Outline 2SK1859 Absolute Maximum Ratings Ta = 25 °C

2SK1851

Abstract: 2SK185
Contextual Info: MOS MOS FE T IVI O S F ield E ffe c t P o w e r T ra n s is to r 2SK1851 N y < r7 — M O S F E T x iffl 2SK 1851 i ,N > h ^ ' 0,7 - M O S FET T”, 5 V H i * IC <50 ® X 'f f- > y i/ Z ^ i m ( ip - fï : m m iz t h SHgffiSjaM fé&itìi X ft. X ^ .y - f > ^ # | 4 ¿ f f t l T ^

transistor yb od

Abstract: 2SK1851 nec 1100 MEI-1202 TEA-1035 TC-2444 2sk18 Nec AC 160
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR ^^•B ESSS 2SK1851 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1851 is N -channel M O S Field Effect T ransistor PACKAGE DIMENSIONS in millim eters designed fo r solenoid, m otor and lam p driver.

2SK1852

Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC J H B DATA SHEET M OS FIELD EFFECT POWER TRANSISTOR 2SK1852 SWITCHING N-CHANNEL POWER MOS FET

2SK2056

Abstract: 2SK1349 2SK1603 2sk1601 2SK1363 2SK1344 2SK1768
Contextual Info: Power M O S FET jt-MOS I!-5 F1 Maximum Rating Application A C 2 2 0 V Input Switching Power Supply Type No. R d s (ON)(£l) Package •2SK2274 2SK1602 2SK1600 2SK1858 2SK2056 2SK2089 2SK2038 2SK2222 2SK2077 2SK2319 2SK2078 2 SK 2 3 2 0 2SK1603 2SK1601 2SK1643

Hitachi DSA002781

Contextual Info: 2SK1859 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline 2SK1859 Absolute Maximum Ratings Ta = 25°C

TEA-1035

Abstract: 2SK1853 MEI-1202 TC-2446 8002 1035
Contextual Info: DATA SHEET ^^m sm 3 NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1853 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1853 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in millim eters designed for solenoid, motor and lamp driver.

TEA-1035

Abstract: tea 1402 2SK1852 MEI-1202 8002 1035
Contextual Info: DATA SHEET NEC ^^MBEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1852 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1852 is N -channel M O S Field Effect Transistor PACKAGE DIMENSIONS in millim eters designed fo r solenoid, m o to r and lam p driver.

2SK1341

Abstract: 2SK1859
Contextual Info: 2SK1859 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator 2 1 1 23 1. Gate 2. Drain 3. Source

transistor sb 772

Abstract: TRANSISTOR D 1853 ACS 086 SK FN 521 512 CJ3 2SK1853 pj 0266 SB 772 KSB 772 SF94
Contextual Info: s— S 5 • S ''— NEC h* MOS MOS F E T M O S Field Effect Power Transistor 2SK1853 N + s< n— X >T M O S F E T y ^ I t i 2 S K 1853 ¿ ,N > 5v F E T T", h 0 ^ °7 - £ W H ] M O S (^ - fi i mm i c co a 1.* (3 j: ^ y" r " ' <A X T'-to ix ^ y f > i i :* > m % T",

100-10L

Abstract: 2SK1850
Contextual Info: NEC m = f = f i\ ? 5 7 . 5/ — — MOS M O S F ie ld E ffe c t P o w e r T ra n s is to r 2SK1850 y < r7 — x 2SK1850 a X m — MOS \ ~y f - > ^ " r ' V < - i X m MOS FE T 5 v m m & i c e / - i -s V , 4 MOS FE T ~ t * N F E T ^ T ”f o > t£#L T , X ^ y f > ?"# |4 i, ® iXT I ' £ tz 46, i •y i / / ^ i

2SK1341

Abstract: 2SK1859 DSA003639
Contextual Info: 2SK1859 Silicon N-Channel MOS FET ADE-208-1328 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline

tea 1402

Abstract: 2SK1850 MEI-1202 TEA-1035 AT1015 TC-7902
Contextual Info: DATA SHEET NEC M BMOS FIELD l EFFECT POWER TRANSISTOR 2SK1850 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1850 is N-channel M O S Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed fo r solenoid, m otor and lam p driver.

BI 370

Abstract: 2SK1878 LM9005 2501L 2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 BA 5810
Contextual Info: - 124 - f £ tt % ffl & m S m * ê JV K V m * (V) * * M 3 & 1 * (A) * P d /P c h Ig s s (max) (W) (A) Vg s (V) (min) (max) Vos (A) (A) (V) fó Í# 1*È (Ta=25‘ C) (min) (V) (max) Vos (V) (V) (min) (S) Id (A) Vd s (V) % ? Id (A) 2SK1852 NEC SW.Motor-D

tea 1402

Abstract: TEA-1035 2SK1850 MEI-1202 2sk18 TEA-1034 TEA1035
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1850 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1850 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in millim eters signed for solenoid, motor and lamp driver.

2SK185

Abstract: 2SK1851 MEI-1202 TEA-1035 2sk18 TC-2444
Contextual Info: DATA SHEET NEC - .r A MOS FIELD EFFECT POWER TRANSISTOR 2SK1851 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1851 is N -channel M O S Field Effect T ransistor PACKAGE DIMENSIONS in m illim eters designed fo r solenoid, m o to r and lam p driver.

Hitachi DSA002748

Contextual Info: 2SK1859 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3PFM D G 1 S 2 3

2SK1852

Abstract: 015fi MADT mpnp
Contextual Info: -y 5 7 . C / |~ ~ NEC ^ ï / \ t mos mos M O S Field Effect Power Transistor 7 î fet 2SK1852 N MOS F E T n m m 2SK1852 a , T, FET 5V N > mn& ic CD&tilz x h M y '?T7 — M O S • m m £ X >f .y f - > 7T'<4 X T " f o f é * V ÎS ÎÆ T ', X >f -y f - > i) i i l t ^ £ £ ¿ 0 ,

2SK1858

Abstract: K1858
Contextual Info: TO SHIBA 2SK1858 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SII.5 2 S K 1 858 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS TO-220FL Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.

B7 SOT-89

Abstract: 2SK185 2SK1858 44t transistor Transistor 3202 1 A 60 transistor 44t
Contextual Info: TO SH IBA =50^7250 T O S H IB A FIELD EFFECT T R A N S IS T O R Q0S33S1 T37 2SK1858 SILICO N N C H A N N E L M O S T Y P E tt- M O S II.5 2 S K 1 858 INDUSTRIAL APPLICATIONS Unit in mm H IG H S P E E D , H IGH C U R R EN T S W IT C H IN G A P P L IC A T IO N S .

2SK1851

Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR ^^•B ESSS 2SK1851 SWITCHING N-CHANNEL POWER MOS FET

2SK1853

Abstract: MEI-1202 TEA-1035 2sk1853a
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1853 SWITCHING IM-CHANNEL POWER MOS FET

Contextual Info: 2SK1859 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current N o secondary breakdown Suitable for Switching regulator Outline 651 2SK1859 Absolute Maximum Ratings Ta = 25°C