2SK8 Search Results

2sk851

Abstract: 0070-II
Contextual Info: 2SK851 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E Cr-MOSli INDUSTRIAL A P P L I CATIONS HIGH SPEED, HIGH CURRENT S WITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONV E R T E R A N D MOTOR DRIVE APPLICATIONS. • L o w Dra i n - S o u r c e ON Resistance

2SK858

Contextual Info: FIELD E F F E C T T R A N S IS T O R SILICO N N CH A N N EL M O S T Y P E ff-MOSii 2SK858 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 03.6±O .2 r1 0.3 MAX. - DRIVE APPLICATIONS.

2SK890

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Ä-MOSH HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 2SK890 INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low Drain-Source ON Resiatance : Rj)g(0N )=O.25£i(Typ.)

2SK880

Contextual Info: 2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.)

Contextual Info: 2SK882 SILICON N CHANNEL MOS TYPE FM TUNER, VHF RF A MPLIFIER APPLICATIONS. Unit in mm . Low Reverse Transfer Capacitance: Crss= 0 •025pF Typ. . Low Noise Figure 2.110.1 1.25 ±0.1 :NF= 1 .7dB(Typ.) . High Power Gain :Gps=28dB(Typ.) . Reconunend Operation Voltage

2SK880

Contextual Info: SILICON N CHANNEL JUNCTION TYPE 2SK880 Unit in mm AU D IO F R E Q U EN C Y LOW N O IS E A M P L I F I E R A P P L I C A T I O N S . 2.1 ± 0.1 1.2 5 ± 0 .1 • High Y fs : EE IYfs |=15ms Typ. at Vd s =10V, Vg s =0 • High Breakdown Voltage: • Low Noise:

2SK81

Abstract: 2SK818 2SK818A SC-65
Contextual Info: Power F-MOS FET 2SK81 8, 2SK818A 2SK818, 2SK818A Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R d s on : R DS (on) = 1.5fl (typ.) • High switching rate : tf = 85ns (typ.) Unit: mm 15.5max. • No secondary breakdow n

2SK868

Abstract: 2SK868A SC-65 C1624
Contextual Info: P o w e r F-MOS FET 2SK868, 2SK 868A 2 S K 8 6 8 , 2S K 8 6 8 A Silicon N-channel Power F-M O S FET P ackage Dim ensions • Features • Low ON resistance R d s on : R d s (on) = 0 .2 fl (typ.) • High switching rate : tf= 150ns (typ.) • No secondary breakdown

2SK808

Abstract: 2SK808A
Contextual Info: P ow er F-M O S F E T 2SK808, 2SK808A 2SK808, 2SK808A Silicon N-channel Power F-M O S F E T Package Dim ensions • Features • Low ON re sistan c e R ds on : R ds (on) = 4 .7 ft (typ.) Unit: mm • High switching ra te : tf = 40ns (typ.) • No secondary breakdow n

2SK880

Contextual Info: 2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)

FET 2SK125

Abstract: FET 2SK109 2SK109 2SK105 2SK97 2SK104 2sk109a 2SK120 2SK107 2SK124
Contextual Info: - 32 - m. % tt ffl € ÌÉ m & f ;E Y * 1 Ä ^ fë $ P d/Pc h ft K 2S K 8 4 föT LF LN A 2SK85 NEC X-Band LN A/OSC 2 S K 8 7 H HÍZ1 LF LN A 2S K 8 9 B ÎL GaAs/SB m V* (V) *t* (V) * ft (W) (A) N D -5 5 G D O 10 b G 100m N D -1 0 G D O 100m D 500m N D

2SK816

Abstract: 2sk895 2SK872 2SK875 2SK882 2SK896 2SK928 2SK880 2SK897 2SK900
Contextual Info: - 74 - € m. % tt m « 'M m & ft ^ £ P d /P c h * K V E # * (V) £ * (A) % S fë fr * (W) Igss (max) (A) Vg s (V) ft ft (min) (max) Vps (A) (A) (V) i± (min) (max) Vd s (V) (V) (V) (Ta=Z5cC) (min) (typ) Vd s (S) (S) (V) ÏD (A) Id (A) 2SK872 NEC sw MOS

2SK839

Abstract: K818A K809A 2SK834 2SK828 2SK813 2SK814 2SK817 S09A 2SK810
Contextual Info: - 70 - ito Hi M tt m € & m m 1 5e! V * S ?£ P d /P c h m * K A (V) * (A) * (W) Ig s s (max) (A) Vg s (V) te % (rain) (max) V d s (A) (A) (V) (min) (V) (Ta=25?C) (max) V d s (V) (V) (min) (S) Id (A) Vd s (V) Id (A) 2SK805 DDC, Motor-D MOS N E 200 DSS

2SK881

Contextual Info: 2SK881 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK881 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) · High forward transfer admittance: |Yfs| = 9 mS (typ.) Maximum Ratings (Ta = 25°C)

2SK812

Abstract: 2sk8
Contextual Info: NEC F n -c h a n n e l m o s f ie l d e ffe c t p o w e r t r a n s is t o r ELECTRON DEVICE DESCRIPTION Ï 5 Ï The 2SK812 is N-Channel MOS Field E ffect Power Transistor designed fo r solenoid, m otor and lamp driver. FEATURES • b 412 S K . 8 1 2 PACKAGE D IM EN SIO N S

2sk82

Abstract: ifoc 2SK823 JI 32
Contextual Info: M O S Field E ffe ct P o w e r T ran sis to r 2SK823 N f t ^ N 7 -M O S I 2S K 823Ü , l f f l > h ^ > * T7 — MOS F E T ffii/CM S < , X - i -? -f > FET £|-5f£[21 W Ì : mm T ? f • f l T Ü >), ÏÜJSÎÈX ^ <y -f > r « - i i 4 . 7 MA X . 15 . 7 M A X .

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK831

Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK831 DESCRIPTION The 2SK831 is N-channel MOS Field E ffe ct Power Transistor PACKAGE D IM E N SIO N S designed fo r switching power supplies, DC-DC converter. FEATURES in m illim e te rs inches

K2040

Abstract: 2SK807
Contextual Info: Power F-MOS FET 2SK807 2SK807 Silicon N-channel Power F-M O S F E T Package Dimensions • Features • Low ON resistan ce Rds on : R ds (on) = 1.1ft (typ.) Unit: mm • High sw itching ra te : tf= 7 0 n s (typ.) 5.2max. 15.5max • No secondary breakdow n

2SK876

Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION " 2SK876 The 2SK876 is N-channel MOS Field Effect Power Transistor PACKAGE DIM EN SIO N S designed for switching power supplies, DC-DC converters. FEATURES • in millimeters inches

2SK828

Abstract: RQ100 2sk82 transistor 3884
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK828 DESCRIPTION The 2SK828 is N-channel MOS Field Effect Power PACKAGE D IM EN SIO N S Transistor designed for switching power supplies DC-DC in m illim e te rs inches converters. FEATURES

2sk82

Abstract: LM 3883 2SK826
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK826 D E S C R IP T IO N The 2 S K 82 6 is N-channel MOS Field Effect Power P A C K A G E D IM E N S IO N S Transistor designed for switching power supplies, DC-DC in m illim eters inches

2SK819

Abstract: jb 5531 T108 diode B3F TC-6273 nec p- channel 815 I-616
Contextual Info: MOS Field E ffe c t P o w e r T ra n s is to r 2SK819 N f t ^ 7 -M < X O S FET ' f i i f f l 2SK819 l i , N f + $ ; i y T t > m ¡ t> lË •y f- > # < , X f y f > ^ I t ^ Æ ftBm h P ' ' 0|7 - M OS F E T t L T Ü 9 , M a iÈ X ( M : mm -i DC-DC a > / < - ? H t l f t o

2SK822

Abstract: 2sk82
Contextual Info: M MOS o s M u n t t o ^ r ? - F ie ld E ffe ct P o w e r T ra n s is to r 2SK822 N ft^ ;U / '° 7 j i m 2S K8 2 2 i, FET m N f t i w i / X > A > X S > h M ''*'r7 — MOS F E T V * V ffiÎÆ ^ fS < , 7 f > / m # -M O S X ' i v f- > (^ - ii 0 , it lH iS x ^