2SK87 Search Results

2SK816

Abstract: 2sk895 2SK872 2SK875 2SK882 2SK896 2SK928 2SK880 2SK897 2SK900
Contextual Info: - 74 - € m. % tt m « 'M m & ft ^ £ P d /P c h * K V E # * (V) £ * (A) % S fë fr * (W) Igss (max) (A) Vg s (V) ft ft (min) (max) Vps (A) (A) (V) i± (min) (max) Vd s (V) (V) (V) (Ta=Z5cC) (min) (typ) Vd s (S) (S) (V) ÏD (A) Id (A) 2SK872 NEC sw MOS

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK876

Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION " 2SK876 The 2SK876 is N-channel MOS Field Effect Power Transistor PACKAGE DIM EN SIO N S designed for switching power supplies, DC-DC converters. FEATURES • in millimeters inches

condenser microphone

Abstract: 2SK879
Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: TOSHIBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 9 <; K R 7 Q GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS Unit in mm 2.1 ± 0.1 1.25 + 0.1 • • High Breakdown Voltage : Vq/d s = —50V TTicrVi T n m i t T mr>pr l»nr»p

2SK879

Abstract: UFF 100 04
Contextual Info: TO SH IB A 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER Unit in mm MICROPHONE APPLICATIONS 2.1 ± 0.1 J • High Breakdown Voltage : V jj g= —50V • High Input Impedance

2SK875

Abstract: 2SK875A
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK875 The 2SK875 is N-channel MOS Field E ffe ct Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies DC-DC converters. FEATURES • in m illim e te rs inches

2SK871

Abstract: 2SK87 2sk8
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION I 2SK871 The 2SK871 is N-channel MOS Field E ffect Power Transis­ PACKAGE DIMENSIONS to r designed fo r switching powersupplies DC-DC converters. FEATURES in m illim eters inches

2SK872

Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE D E S C R IP T IO N 2SK872 The 2S K 87 2 is N-channel MOS Field E ffect Power Transistor P A C K A G E D IM E N S IO N S designed fo r switching power supplies, DC-DC converters. FEATURES •

2SK874

Abstract: tc386 ti 28
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK874 The 2SK874 is N-channel MOS Field E ffe ct Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies, DC-DC converters. FEATURES • in m illim e te rs inches

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK879

Abstract: a63m
Contextual Info: TO SH IBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 2.1 ±0.1 1.25 ± 0.1 • • • High Breakdown Voltage : V q d § = —50V High Input Impedance : lQ gg= —l.OnA Max. (VQg= —30V)

2SK879

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK872

Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
Contextual Info: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss

2SK876

Contextual Info: M O S Field E ffe c t P o w e r T ra n s is to r N ft^ l/M ° 7 -M O S i 2SK876 i, x 'f D C -D C # mm h f f ^ ' 0l7 - M O S x - t > ffiK & i & <, FET « [ 2 FE T ] ( T O : mm f- > 7 * # l t t fc •;, S5f] iS x -i 3 > /< — 9 C f i t ' t o i t °V d s s

2SK879

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: 2SK878-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V)-3.5 I(D) Max. (A)100m P(D) Max. (W)340m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.37m

TC-6300

Abstract: 2SK873 miw dc-dc tc6300 Voscm-20
Contextual Info: M O S Field Effect Pow er Transistor 2SK873 N f t ^ ^ - M O S FET xmm 2SK873 Ü , •c * > K < , x ^ 7 f > n i i i ; - M OS F E T t i T is d , ¡a s Jf x W & E I T O ! mm -i ■y-f > r-.iiri?;, D C -D C n > ✓ * -? t’ i i i S T 't o & f t °V dss

2SK870

Abstract: s1,3/2iv SC-65
Contextual Info: P o w er F-MOS FET 2SK870 2SK870 Silicon N-channel Power F-M O S FET Package Dimensions • Features • Low ON re sistan c e RDs on : R DS (on) = 0 .2 3 il (ty p .) • High switching ra te : tf= 140ns (typ.) • No secondary breakdow n Unit: mm 15.5m ax

2SK873

Contextual Info: NEC N-CHANNEL M O S FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK873 The 2SK873 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies, DC-DC converters. FEATURES • in m illim eters inches

2SK870

Abstract: SC-65
Contextual Info: P ow er F-M O S F E T 2SK870 2SK870 Silicon N-channel Power F-M O S F E T • Package Dimensions ■ Features • Low ON resistan ce RDs on : R ds (on) = 0 .2 3 f i (ty p .) • High switching rate : tf = 140ns (typ.) • No secondary breakdown • High breakdown voltage, large power

2SK879

Abstract: NA IJ5
Contextual Info: TOSHIBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS Unit in mm 2.1 ± 0 .1 1.25 ± 0.1 • High Breakdown Voltage : V q d § = —50V • High Input Impedance

2SK871

Abstract: 2SK87
Contextual Info: M O S B W f f - $ ] ^ s < r7 M O S Field Effect Pow er Transistor • /\°7 - M O S fe t if f f l 2SK871 i±, V t • ^ > ' ^ X / > hM^or7- MOS FET > f S Ì/ ljH S < , x -1“ V - f > 9 , 4 f t m m ¥ f ì : mm >'/ 0 3.2 + 0.2 f- > ^ S ïl, DC-DC a >s<- ? fcflüi tM".