TC-7986A
Abstract: 2SK2112 CMS01 7986A diode lt 0236
Contextual Info: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,
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2sk2112oeti14a-ti4s24tc-7986a+3cms017986adiode lt 0236
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SK FN 521
Abstract: 2SA1897 T-100 paps7k V/SK FN 521
Contextual Info: 5ë'fr%-R H u ttifa fp 0|D July 1993 M 1 "sj O *vj m *□ V; w> -* ít Si' ü 1 V >4 v> di V' ü A Si % Vf m 111 V m lin üsf 8$ St * fr H (Q .H •n ~ü H H m Vf Vi- m Püf V. m üf Vi o" Ttr D 1 5o o H s: o" o o H o 11 ro Ül H °Il en H o II IIA N) ^ en
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2sa18972sai897itmrniithiei-620sk fn 521+3t-100paps7kv/sk fn 521
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2sk82
Abstract: ifoc 2SK823 JI 32
Contextual Info: M O S Field E ffe ct P o w e r T ran sis to r 2SK823 N f t ^ N 7 -M O S I 2S K 823Ü , l f f l > h ^ > * T7 — MOS F E T ffii/CM S < , X - i -? -f > FET £|-5f£[21 W Ì : mm T ? f • f l T Ü >), ÏÜJSÎÈX ^ <y -f > r « - i i 4 . 7 MA X . 15 . 7 M A X .
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2sk8232sk82ifocji 32 |
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uPD71084
Abstract: FZ 300 R 06 KL UPD71084G D71084 UPD71084C V30TM P18C PD70116 PD71084 IC-6390A
Contextual Info: NEC Ì i f / \ M O S In te g ra te d C irc u it f 7 / ¿¿ P D 7 1 0 8 4 ÌÌ, X fc ^ n ¿ P < y D 7 >y 1 ? • s* VX 8 4 •x x ^ v — 9 / \- y 4 ' < T t o n m OC M O S 7 ° n -feX O ^ P D 7 0 1 0 8 « lJ^ j^ V 2 0 ), o % m m t W T L i r ? 7 O ux ? ;m
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ts484ratg14upd71084fz 300 r 06 kl+8upd71084gd71084upd71084cv30tmp18cpd70116pd71084ic-6390a
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2SK2133
Abstract: 2SK2133-Z MP-25 MP-25Z CMT-10
Contextual Info: zr— 'i? NEC ^ • £ /— h M O S ^ -^ 5 e j!j^ /\0r7 - M O S FET M O S Field E ffect P o w e r T ran sistors 2SK2133, 2SK2133-Z N ^ Ÿ T W U /x V -M O S f e t i t f f l 2SK 2133, 2 S K 2 1 3 3 -Z l i N i t :Ê . 7 , < i 7 - MOS FET T 't T * ' U ¡Ü IS
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2sk21332sk2133-ziei-620mp-25+3o-220abmp-25zcmt-10
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TC-7606
Abstract: 2SK1283
Contextual Info: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to
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2sk1283tc-7606 |
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ac05d
Abstract: AC05DJM AC05DJM-Z AC05FJM AC05FJM-Z AC05F
Contextual Info: • 5 /— h NEC A C 0 5 r jJ M , 400 V, A C 05D J M , A C 0 5 D J M -Z A C 0 5 F J M , A C 0 5 F J M -Z r 5 A A C 05r jJM -Z i i , m b * TRIAC 5 A K TRIAC T , m O il L t ° - ? t 600 V V t o # m o W / ' J v K I C iz M M ù ^ m m W o — h h 'J y <, o É A C 05r jJM -Z
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rac05djmac05djm-zac05fjmac05fjm-z+6ac05rul94v-0oei-620ac05djmac05dac05f
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D17012GF
Abstract: 78MEC D17012GF-011 D17012G ltaft et 4-1-fm bfy40 d17012 tlu 011 uPD6121G
Contextual Info: i r — • ts— h Ü 5 È M O S Â « @ £ & N E M O S Integrateci Circuit C j F M , M P L L J l ) W Æ u , L W S è v P 1 D f n - t > i r 7 (¥ # c ) - 9 - < 1 2 G F - 1 1 m h P “ 7 >u P D 1 7 0 1 2 G F -0 1 1 {â ^ :tâ :^ lÆ iiO P L L jl> ra '> > iz -y -< 1 f^ ïfc F M ) MW, L W if
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//pd17012gf-011200mhz7tfm18jd17012gf+978mecd17012gf-011d17012gltaftet 4-1-fmbfy40d17012tlu 011upd6121g
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vlt 2900
Abstract: uPD78P334 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334
Contextual Info: • 5/— h M osm m m s& M O S Integrated Circuit /¿PD78P334 1 6 / 8 tf "y V • > > //PD 78P334 It, "y~? • v> f ^ □ ¿«PD 78334C Q rtg|$v*;? ROM •7> • i '- f A P R O M S S . B , —J tf c 'I t fc, EPROM S n M i, b° zl — 9 • ? -f A PROM i f c t i EPROM U S # f t x . / c n nn 'C f „
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upd78p33478p33478334cpd78334+1132768x8j2t43bt24-i-vlt 2900upd78p334lq78p334lqic-8075s13s3t02itfk 082mpd78p334
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2SJ197
Contextual Info: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X
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2sj197o2sk1483 |
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2SJ328
Abstract: 2SJ328-Z J0502
Contextual Info: NEC M O S ^ l # ^ l / \ “7 - M O S F E T M O S Field Effect P ow e r Transistors 2SJ328,2SJ328-Z P ^ q U U /N ^ - M x 2 S J 3 2 8 1 ÎP 5 1 + J U W -M O S FETT * O S F E T i f f i m tt : m m ) > S S * ' i''{6 < X -f •> Y 7 ? - E lï# ^ D C - D C = l> /S - ^ iC Â T !- r o £ £ ,
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2sj3282sj328-z2sj328ttpbt2sj3291f+2iei-620j0502
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e5es
Abstract: IEGT nec 05d 51ti BA 9706 K cxt2 HP 1003 WA NEC CPUii POB1 IC CMOS7
Contextual Info: r M OS Integrated Circuit /¿PD17P402 * t i t ^ m 4 fcf'y N • •v - f ? □ = ] > h P - 7 /¿PD17P402 i, /¿PD17402£>P^VX?ROM £, 7 > • £ < A P R O M T 'B £ & tL* I«K i T T o fi P D17P402 « , 7 P 7 A 0 W # Jt £ / jP D 1 7 P 4 0 2 C 7 3 ^ ^ t4 (fc jg fc S ftftif) l i ,
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upd17p402pd17402d17p402d17402+1516k/w8192x16pd17p402gc-3b9u10427jj1vqds00pp17p402e5esiegtnec 05d51tiba 9706 kcxt2hp 1003 wanec cpuiipob1 iccmos7
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TRANSISTOR si 6822
Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
Contextual Info: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to
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upa2981upa2982transistor si 6822si 6822+6pa2981ctransistor 6822 sitransistor 6822si 6822 transistor6822 transistortransistor npn 6822
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2SJ411
Abstract: TC-8022 ru 4c diode
Contextual Info: MOS h 7 > y 'X i! M OS Field Effect Transistor 2SJ411 ? ± \s M OS FET X 2S J411 it P 5 1 -V M O S F E T T \ 5 ' V M y ^ :M % > ^ 7 m 1C O t ± i * t C J: 5 ¡ t & S K t ! ) m m e : mm) 7.0 MAX. y - n m z i 7 ^ ^ . d c/d c = 3 > / 'i- ^ * if ic g ia - ? - r 0
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2sj411iei-620tc-8022ru 4c diode |
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TC7988
Abstract: 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q
Contextual Info: M O STféïl-f^ jÎJiP: h 37 > v J X ^ M O S Field Effect Transistor r ^ j_ C I E • •fc I ÌK N 2 S K 2 1 5 8 MOS FET r ü iH X -f y 2 S K 2 1 5 8 I Î1.5 V l E l i £ -f U , fÉ ÎŒ T ig B T 't , ÿ 9 Æ3 * J U i ^ M O S F E T T 5* A 'O K -7 - f 'V y
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2sk21582sk2158i73pdpiei-620+71-n00tc7988marking j1atransistor wt7j fet marking 2 awmarking n003250q
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2SD1000
Abstract: IC HE 4011 2SB799 2SD100 TEB-528 2SD1000 TC-5494A WFs transistor
Contextual Info: ?— S • Ss— H Silicon T ra n s is to r 2SD1000 o - t — r 'A * T > m m m i •mm - 7 °m < T ) K 7 4 2 S B 7 9 9 ¿ 3 yy°') ? 'jr f È f f l e '# ti~0 O/J'A^’C P t ^ '^ ^ ^ > ¡ftiiŒ T 'i) < 5o 1.5+0.1 p m = 2 .0 m w ± 0 .7 mmX Il 3 U 7 y W 3
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2sd10002sb799ot-89pws10+6cycles50ic he 40112sd100teb-528 2sd1000tc-5494awfs transistor
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TC-8008
Abstract: 2SJ355 xz43
Contextual Info: 7 s— 9 • 3/ - h NEC M O S ^ f ^ Jü K 7 > V * ^ M O S Field Effect Transistor 2SJ355 4 ^ 1/ M O S FET a s ja s s iiP ^ + ^ -M s m /io s f e t z \ * 1C <t 5 ¡ S i g i g l i if s m è & ' X Y -y * > f m * - ? t * Ü P ° P B + > g f i L * rf i < ü t è : mm)
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2sj3552sj355tip51-piei-620tc-8008+1xz43
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sgm 8905
Abstract: 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t
Contextual Info: December 19, 2000 Preface to the 13th Edition The Harmonized Tariff Schedule of the United States, Annotated for Statistical Reporting Purposes HTS 2001 is being published pursuant to section 1207 of the Omnibus Trade and Competitiveness Act of 1988 (P.L.
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\fr\fm\21ded1pfrm0221ded1sgm 8905+93302 81air 3302 81aalcan joint compoundsnapdragonako 546 687burglar alarm system abstractwalkie talkie circuit diagramzener diodes dz 8407tea 1601 t
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2SK872
Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
Contextual Info: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss
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2sk872irf 545transistor b 772 pupc1100+3tle 6299 rmfe 521261717
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fcf - 4 94v - 0 _ 1
Abstract: FZJ 131 IC-9083 UP1713 75tti 3tf 31 n4 umi D1713 MTI BD ic9083
Contextual Info: i. I I ÎK I M E C Y ^ MOS M O S # [l]fê In te g r a te d C ir c u it /¿ P D 1 7 1 3 4 B ,1 7 1 3 6 B '¡ 'm 4 fcÎ 7 h • u m 'y y 0 * h P - 7 ¿¿PD17134B, 17136BÌÌ, 8 fcT'y h A/D 3 >/<— $ 4 ^ * ; u , ? < (3 ^ + * ; u ) , A C - t z P ^ P ^ f è
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upd17134bupd17136b//pd17134fcf - 4 94v - 0 _ 1+9fzj 131ic-9083up171375tti3tf 31n4 umid1713mti bdic9083
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ic SE 135
Abstract: 00jT K49H
Contextual Info: i r — S* • i s — h BA1A4Z Compound Transistor Î& ÎÆ 4# ' r t ü t P N P x □ ^ - fi i t : mm) o ^ M T X i t ÿ f i l l T V ' Î t » ( R i = 10 4 k£2) 6° ¥ O B A 1 A 4 Z b = > > * Ê * JS * Æ fê (T a = n 9 n V 9 9 - 3 - 1 3 V 3 u- 9 y •
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pws10cycles50ic se 13500jt+1k49h
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2sk1150
Abstract: b 772 my1 PS7K 2SK 1411 t8506
Contextual Info: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .
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2sk115050ttib 772 my1ps7k+22sk 1411t8506
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2SK1149
Abstract: transistor sb 772
Contextual Info: Mos M O S Field Effect Pow er Transistor 2SK1149 N — l ' / ' r7 X 'f -y 9 - T . m 2SK1149 i, N - f - r * iz X & M O F E T > m MOS F E T T”, 5 V « i l * IC ¿Diti ¡ t S f g g j ^ - S T t È ^ it a x : mm 7 l f f t o i ' S i ^ ' i 7 f >J î ! * W D C - D C
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2sk1149transistor sb 772 |
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kb 778 o g 5
Abstract: 3e tRANSISTOR kb 778 UA61
Contextual Info: — S 7 • $ / — h f ê E 'ê ' > i> 7 * 9 -7 h Com pound Transistor / //PA 6118C ü, f# (c K-y V9 A 7 ¿ P A <r>Y'ÿ A °F IP 6 1 1 8 C t 7 * ffl 8 Elï# )StfO ] - 7 > y X ^ T H ' T f „ T T L ^ M O S L S I^ tB ÎJÎS f- d ^ h - fr- C , ^ - X fc îfc fc iS lIIR t
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jupa611pa6118ciikb 778 o g 53e transistor+2kb 778ua61
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