2SK103 Search Results

2SK1032

Abstract: 2SK1032A SC-65
Contextual Info: Power F-MOS FET 2SK1032, 2SK1032A 2SK1032, 2SK1032A Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds, on : R ds ( o n ) = 1 . 3 f l (ty p .) Unit: mm • High sw itch in g r a te : t ( = 1 2 0 n s (ty p .)

Contextual Info: Power F-MOS FET 2SK1035 2SK1035 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R ds on : (on) = 0 .2 ft (typ.) R ds Unit: mm • High sw itching ra te : tr= 100ns (typ.) • No secondary breakdow n • Low voltage drive is possible

2SK1030

Abstract: 2SK1030A
Contextual Info: Power F-MOS FET 2SK1030, 2SK1030A 2SK1030, 2SK1030A Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON r e s is ta n c e R ds on : R ds (on) = 3 .0 f i (ty p .) Unit: mm • H igh sw itch in g r a te : ti = 4 0 n s ( ty p .)

Contextual Info: 2SK103M2 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)20Â V(BR)GSS (V)20Ê I(D) Max. (A)10m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)100õ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: 2SK103N1 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)20Â V(BR)GSS (V)20Ê I(D) Max. (A)10m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)100õ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: 2SK1036 Switching Diodes MA142K Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 0.425 1.25±0.1 0.425 ● Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 Small S-Mini type package enabling high density mounting

Contextual Info: 2SK1033 MA111 Switching Diodes MA137 Silicon epitaxial planer type 0.28±0.05 Small SS-Mini type package with two incorporated elements, enabling high-density mounting Unit : mm 1 Series connection in package 3 2 Parameter Unit 80 VR +0.05 +0.05 Rating Symbol

2SK1036

Contextual Info: 2SK1036 Switching Diodes MA158 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 Symbol 1.45 +0.1 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter 0.4 –0.05 +0.2 1.9±0.2

Contextual Info: 2SK1036 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)

Contextual Info: 2SK1030 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)

Contextual Info: 2SK103K2 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)20Â V(BR)GSS (V)20Ê I(D) Max. (A)10m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)100õ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: 2SK103M1 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)20Â V(BR)GSS (V)20Ê I(D) Max. (A)10m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)100õ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2SK1031

Contextual Info: HITACHI 2SK1031-SILICON NCHANNEL JUNCTION FET LOW FREQUENCY AMPLIFIER k L J l I-L |3;I i T& ; » S S j.C ^ 5j f 13 f 0 ^ «A I Or-aA . ; * <j n • «» - j <[lin>£‘.MM\ k»lMl-rl vü— ÖZ (MPAK ABSOLUTE MAXIMUM RATINGS (Ta=25«C) S ym b o l Item

2SK1033

Abstract: 25C1 2SK103
Contextual Info: P o w er F-MOS FET 2SK1033 2SK1033 Silicon N-channel Power F-M O S FET • Package D im ensions ■ Features • L ow ON r e s is ta n c e R ds on : R Ds (on) = 0 .0 4 5 f i (ty p .) Unit: mm • H igh sw itch in g r a te : t f = 180ns (ty p .) • N o se c o n d a ry b reak d o w n

2sk129

Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119

2SK2574

Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Contextual Info: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative

2sk1035

Contextual Info: 2SK1035 Switching Diodes MA193 Silicon epitaxial planer type For switching circuits Unit : mm +0.2 2.8 –0.3 • Features 0.65±0.15 +0.1 1.5 0.4 –0.05 1.45 0.65±0.15 +0.25 –0.05 0.5 0.8 0.4±0.2 Unit Reverse voltage DC VR 80 Repetitive peak reverse voltage

Contextual Info: 2SK1033 MA111 Switching Diodes MA157A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.2 1.9±0.2 1.1 –0.1 +0.2 Rating Symbol VR 80 V Peak reverse voltage VRM 80 V Single Series Repetitive peak

Contextual Info: 2SK1036 Power F-MOS FETs 2SK1036 Silicon N-Channel Power F-MOS Unit : mm ON-resistance RDS on : R DS(on)= 0.23Ω(typ) 16.7±0.3 • Applications ø3.1±0.1 converter ● Non-contact relay drive 14.0±0.5 ● Solenoid ● Motor 4.2±0.2 switching : tf = 80ns(typ)

Contextual Info: 2SK1033 Power F-MOS FETs 2SK1033 Silicon N-Channel Power F-MOS Unit : mm ● High-speed secondary breakdown ● Low-voltage 16.7±0.3 ● No switching : tf =180ns typ drive 4.2±0.2 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 ON-resistance RDS(on) : RDS(on) = 0.45Ω(typ)

Contextual Info: 2SK1035 Switching Diodes MA1U157A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct ● Series connection type 0.7–0 ■ Absolute Maximum Ratings Ta= 25˚C

Contextual Info: 2SK1035 Power F-MOS FETs 2SK1035 Silicon N-Channel Power F-MOS Unit : mm ● High-speed secondary breakdown ● Low-voltage 16.7±0.3 ● No switching : tf = 100ns typ drive 4.2±0.2 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 ON-resistance RDS(on) : R DS(on)= 0.2Ω(typ)

2SK1030A

Abstract: 2SK1030 TC-25T
Contextual Info: P ow er F-MOS FET 2SK1030, 2SK1030A 2SK1030, 2SK1030A Silicon N-channel Power F-M OS FET Package Dimensions • Features • Low ON re sista n c e Ru, on : Ri» (on) = 3 .0 fi (ty p .) U o f men • High sw itching r a te : U *» -10ns ( ty p .) é im»t

2SK1036

Abstract: mqs 6 2SK103
Contextual Info: P ow er F-MOS FET 2SK1036 2SK1036 Silicon N-channel Power F-MOS FET Package Dimensions • Features U ni: nan • Low ON resistance Kl* on : Ri„ (on) = 0 .2 il (typ.) • High sw itc h in g r a t e : t« » 8 0 n s (ty p .) M —t 10 2 « a . • No secondary breakdown