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2SK110 Datasheets (57)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK11/0	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	83.51KB	1
2SK110	Unknown	FET Data Book	Scan	PDF	96.17KB	2
2SK1100	Unknown	FET Data Book	Scan	PDF	106.4KB	2
2SK1101	Collmer Semiconductor	MOSFET Transistors	Scan	PDF	633.86KB	5
2SK1101	Unknown	N-CHANNEL SILICON POWER MOS-FET	Scan	PDF	172.15KB	4
2SK1101	Unknown	FET Data Book	Scan	PDF	106.4KB	2
2SK1101-01M	Collmer Semiconductor	FAP-II Series / FAP-IIIA Series MOSFETS	Scan	PDF	92.67KB	1
2SK1101-01M	Fuji Electric	N-CHANNEL SILICON POWER MOS-FET	Scan	PDF	137.04KB	3
2SK1101-01MR	Fuji Electric	N-channel Silicon Power MOSFET	Scan	PDF	172.15KB	4
2SK1101MR	Unknown	N-CHANNEL SILICON POWER MOS-FET	Scan	PDF	172.16KB	4
2SK1102	Collmer Semiconductor	MOSFET Transistors	Scan	PDF	633.86KB	5
2SK1102	Fuji Electric	TRANS MOSFET N-CH 500V 10A 3TO-220F	Scan	PDF	1.11MB	16
2SK1102	Unknown		Scan	PDF	172.84KB	4
2SK1102	Unknown	FET Data Book	Scan	PDF	106.4KB	2

2SK1102-01	Collmer Semiconductor	MOSFET Transistors	Scan	PDF	633.86KB	5
2SK1102-01M	Collmer Semiconductor	FAP-II Series / FAP-IIIA Series MOSFETS	Scan	PDF	92.67KB	1
2SK1102-01M	Fuji Electric	N-CHANNEL SILICON POWER MOS-FET	Scan	PDF	139.58KB	3
2SK1102-01MR	Fuji Electric	N-CHANNEL SILICON POWER MOS-FET	Scan	PDF	172.83KB	4
2SK1102-01MR	Fuji Electric	N-channel Silicon Power MOSFET	Scan	PDF	172.83KB	4
2SK1103	Panasonic	TRANS JFET N-CH 6A 3MINI3-G1	Original	PDF	75.18KB	3

2SK110 Price and Stock

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NEC Electronics Group 2SK1109-J36
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK1109-J36		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others 2SK1102 Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK1102		48		1	1 $3.00 10 $2.25 100 $1.86 1000 $1.86 10000 $1.86	Buy Now
Quest Components	2SK1102		116			1 $2.50 10 $2.50 100 $1.50 1000 $1.35 10000 $1.35	Buy Now
Fuji Electric Co Ltd 2SK1102-01MR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1102-01MR		2,782			1 $2.80 10 $2.80 100 $2.80 1000 $0.88 10000 $0.77	Buy Now
FEC 2SK1102 POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1102		38			1 $4.00 10 $2.50 100 $1.50 1000 $1.50 10000 $1.50	Buy Now

2SK110 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK1011 Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211 Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	2sk1221-01 t0220 2sk1917-01m t0220f15 +82sk1007-01 2sk1009-01 2sk1011-01 2sk1101-01m 2sk1011 2sk1013-01 2sk1222-01 2sk1211	PDF
A2149 Abstract: cnc schematic 2SK1101-01M 2SK series 3dd4 A2148 6aj5 Contextual Info: 2SK1101-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S Outline Drawings • Features 'H ig h speed sw itching »Low o n-resistance »No secondary b reakdow n • Low driving p o w er ►High voltage	OCR Scan	2sk1101-01m sc-67 0d030dti a2-150 +6a2149 cnc schematic 2sk series 3dd4 a2148 6aj5	PDF
2SK1104 Abstract: 2SJ0164 2SJ164 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b	Original	2002/95/ec 2sj0164 2sj164 2sk1104	PDF
Contextual Info: 2SK1101-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S I Outline Drawings • Features • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • V gss = ± 3 0 V G uarantee	OCR Scan	2sk1101-01m 1101-01m	PDF
Contextual Info: 2SK1103 Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ163 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID ±20 mA Gate current IG 10 mA Allowable power dissipation	Original	2sk1103 2sj163	PDF
2sk1507 Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	2sk1221-01 t0220 2sk1917-01m t0220f15 +102sk1007-01 2sk1009-01 2sk1011-01 2sk1101-01m 2sk1507 2sk1018-01 2sk1018 2sk1820-01 2sk956 2sk1013-01	PDF
A2151 Contextual Info: 2SK1102-01 MR FUJI P O W E R M O S - F E T N-Ch ANNEL SILICON POWER MOS-FET F-II SERIES • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V rss = ± 3 0 V Guarantee • Avalanche-proof	OCR Scan	2sk1102-01 538b-7680 a2151	PDF
2SK1104 Abstract: 2SJ164 SC-72 Contextual Info: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS	Original	2sk1104 2sj164 sc-72	PDF
analog switching ic Abstract: 2SK1103 UN1213 UNR1213 XN08081 XN8081 Contextual Info: Composite Transistors XN08081 XN8081 Silicon N-channel junction (FET) Silicon NPN epitaxial planer transistor (Tr) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element • 2SK1103 + UNR1213 (UN1213)	Original	xn08081 xn8081 2sk1103 unr1213 +2un1213 analog switching ic	PDF
2SK1104 Abstract: 2SJ164 Contextual Info: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features 15.6±0.5 ■ Absolute Maximum Ratings (Ta = 25°C)	Original	2sk1104 2sj164	PDF
2SK1103 Abstract: XN1D873 Contextual Info: Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 0 to 0.1 2SK1103 x 2 elements • Absolute Maximum Ratings 1 : Gate Tr1 2 : Gate (Tr2) 3 : Source (Tr2) (Ta=25˚C) Parameter	Original	xn1d873 2sk1103	PDF
2SK1103 Abstract: XP1D873 Contextual Info: Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 0.2±0.05 For analog switching 2.1±0.1 2.0±0.1 2 5 3 4 0.9± 0.1 • Basic Part Number of Element 2SK1103 x 2 elements 0 to 0.1 ● 0.7±0.1 +0.05 ● 1 0.425 0.12 – 0.02 ● Two elements incorporated into one package.	Original	xp1d873 2sk1103	PDF
2SK2079-01M Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M Contextual Info: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45	OCR Scan	2sk905 2sk906 2sk900 t0220 +92sk947m t0220f15 2sk901 2sk1549 t03pf 2sk902 2sk2079-01m 2sk2079 2sk2001-01m	PDF
2SK1012 Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	2sk1221-01 t0220 2sk1917-01m t0220f15 +132sk1007-01 2sk1009-01 2sk1011-01 2sk1101-01m 2sk1012 2sk1015 2sk1018-01 2sk1082 2sk1211 2sk1545 2sk1018 2sk1081-01 2sk1102	PDF

Contextual Info: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01	OCR Scan	2sk1006-01m 2sk1007-01 2sk1009-01 2sk1386-01 +62sk1011-01 2sk1101-01m 2sk1013-01 2sk1015-01 2sk1916-01 2sk1017-01	PDF
2sk129 Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131 Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119	Original	2sk101 2sk102 2sk103 2sk104 +142sk105 2sk106 2sk107 2sk108 2sk109 2sk109a 2sk129 2sk150 datasheet 2sk107 data sheet 2sk105 datasheet 2sk122 2sk146 datasheet 2sk182e 2sk131	PDF
Contextual Info: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 M Di ain sc te on na tin nc ue e/ d 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features	Original	2sk1104 2sj164	PDF
2SJ0163 Abstract: 2SJ163 2SK1103 Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation	Original	2sj0163 2sj163 2sk1103	PDF
2SK2079 Abstract: 2SK2079-01M Contextual Info: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)	OCR Scan	2sk905 2sk906 2sk900 2sk947m +82sk901 2sk1549 2sk902 2sk949m 2sk950 2sk724 2sk2079 2sk2079-01m	PDF
FET121 Abstract: 2SK1103 XN0D873 XN1D873 Contextual Info: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 4 5 1.50+0.25 –0.05 3 1 1.1+0.2 –0.1 10˚ • 2SK1103 x 2 • Absolute Maximum Ratings Ta = 25°C	Original	xn0d873 xn1d873 2sk1103 sc-74a +1fet121	PDF
2SK1104 Abstract: 2SJ164 2sj16 Contextual Info: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 M Di ain sc te on na tin nc ue e/ d unit: mm 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 15.6±0.5 • Absolute Maximum Ratings (Ta = 25°C)	Original	2sk1104 2sj164 2sj16	PDF
2SJ163 Abstract: 2SK1103 Contextual Info: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS −65 V Drain current ID 20 mA Gate current	Original	2sk1103 2sj163	PDF
2SK1103 Abstract: UN1213 XP8081 Contextual Info: Composite Transistors XP8081 Silicon N-channel junction FET Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For analog switching (Tr1)/switching (Tr2) 1 6 2 5 3 4 0 to 0.1 2SK1103+UN1213 (transistors with built-in resistor) 0.12 –0.02 0.9±0.1	Original	xp8081 2sk1103 un1213	PDF
2SK1104 Abstract: 2SJ0164 2SJ164 Contextual Info: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features 15.6±0.5 ■ Absolute Maximum Ratings (Ta = 25°C)	Original	2sj0164 2sj164 2sk1104	PDF

2SK110 Search Results

2SK110 Datasheets (57)

2SK110 Price and Stock

NEC Electronics Group 2SK1109-J36

Others 2SK1102

Fuji Electric Co Ltd 2SK1102-01MR

FEC 2SK1102

2SK110 Datasheets Context Search

2SK1011

A2149

2SK1104

2sk1507

A2151

2SK1104

analog switching ic

2SK1104

2SK1103

2SK1103

2SK2079-01M

2SK1012

2sk129

2SJ0163

2SK2079

FET121

2SK1104

2SJ163

2SK1103

2SK1104