2SK107 Search Results

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

Contextual Info: TOSHIBA TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI-CHIP TD62 M 4 5 0 3 A F N POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x4 and Diodes (1 SSI 84). FEATURES • 4V Drive

2SK1079

Contextual Info: 2SK1079 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7T-MOSm HIGH SPEED S WITCHING APPLICATIONS INDUSTRIAL APPLICATIONS RELAY DRIVE, M OTOR DRIVE AND DC-DC CONVERTER APPLICATIONS Unit in mm 1.6 MAX. 4.6 MAX. FEATURES: • 4-Volt Gate Drive • Low Drain-Source ON Resistance

2SK1070

Abstract: 2SK435
Contextual Info: HITACHI 2SK1070-SILICON N-CHANNEL JUNCTION FET l o w f r e q u e n c y /hTg h f r e q u e n c y AMPLIFIER O 3cn l/i i ?i i 1 j Ì tí i 055 1Oi&i «ài h zkí S H u <N • 1 — C A I. Dro.ri •f. <> « .V C.nr r*> »*niml - r ° L C j o i

2SK1078

Abstract: 1SS184 SSOP24 TD62M4503AFN
Contextual Info: TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x 4 and Diodes (1SS184). FEATURES 4V Drive Low ON Resistance : RDS (ON) = 0.58 Ω (Typ.)

2sk129

Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119

2SK1070

Abstract: Hitachi DSA0076 2SK435
Contextual Info: 2SK1070 Silicon N-Channel Junction FET ADE-208-1175 Z 1st. Edition Mar. 2001 Application Low frequency / High frequency amplifier Outline MPAK 3 1 2 1. Drain 2. Source 3. Gate 2SK1070 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage

Contextual Info: TO SHIBA TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI-CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x4 and Diodes (1 SSI 84). FEATURES • 4V Drive • Low ON Resistance : Rn<; ( n h i\ = 0 .5 8 0 (Typ.)

Contextual Info: Preliminary Datasheet 2SK1070 R07DS0282EJ0300 Previous: REJ03G0574-0200 Rev.3.00 Mar 28, 2011 Silicon N-Channel Junction FET Application • Low frequency / High frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Drain

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1079 Field Effect Transistor Silicon N Channel MOSType L2-jt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ' Rds(ON) = 0 .9 5 ii (Typ.)

marking Z4

Contextual Info: TOSHIBA 2SK1079 Field Effect Transistor Silicon N Channel MOS Type L2-rc-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance • R d S (O N ) = 0.95i2 (Typ.)

Hitachi DSA002757

Contextual Info: 2SK1070 Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline 2SK1070 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Gate to drain voltage VGDO –22 V Gate to source voltage VGSO –22 V Drain current

2SK1070PIDTL

Abstract: 2SK1070PIDTL-E 2SK1070 2SK1070PIETL-E SC-59A PLSP0003ZB-A
Contextual Info: 2SK1070 Silicon N-Channel Junction FET REJ03G0574-0200 Previous ADE-208-1175 (Z Rev.2.00 Mar.14.2005 Application • Low frequency / High frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Drain 2. Source 3. Gate

Contextual Info: 2SK1074 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)30 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)120 Minimum Operating Temp (øC)

2SK1073

Abstract: lm815 2SK1074 LM8002 2SK1078 2SK1079 2SK1082 2SK1092 2SK1084 2SK1100
Contextual Info: m s tí: % m & m iS H f V j Hi A K V * * 2S K 1 0 6 9 H # LF A J N D -4 0 G D S BÍL LF/HF A J N D -2 2 G D O 2SK1074 S M 2SK1078 2SK1079 të S P d/Pc h 2SK1070 2SK1073 £ 1 9} * (V) - 22 0 & (A) * (W) I gss (max) (A) Vg s (V) (min) (A) % (max) V d s (A)

2SK1078

Contextual Info: TOSHIBA 2SK1078 Field Effect Transistor industrial Applications Unit in mm Silicon N Channel MOS Type L2-tt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

2SK1078

Abstract: 1SS184 SSOP24 TD62M4503AFN
Contextual Info: TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x 4 and Diodes (1SS184). FEATURES l 4V Drive l Low ON Resistance : RDS (ON) = 0.58 Ω (Typ.)

Contextual Info: 2SK1070 Silicon N-Channel Junction FET HITACHI Application Low frequency / High frequency amplifier Outline MPAK 4? ^ 2 1. Drain 2 ' S o u rc e 3. Gate 1064 2SK1070 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Gate to drain voltage VGD0 -2 2 Unit

2SK1078

Abstract: VSOP24 M4503 TD62 TD62M4503AFN
Contextual Info: TOSHIBA TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI-CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x4 and Diodes (1SS184). FEATURES • 4V Drive • Low ON Resistance : Rd S(ON) =0.580 (Typ.)

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1078 Field Effect Transistor Silicon N Channel MOSType L2-jt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ' Rds (on ) = 0.4£i (Typ.)

Contextual Info: Preliminary Datasheet 2SK1070 R07DS0282EJ0400 Rev.4.00 Jan 10, 2014 Silicon N-Channel Junction FET Application • Low frequency / High frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A Package name: MPAK 3 1 2 1. Drain 2. Source 3. Gate Absolute Maximum Ratings

VSOP24

Contextual Info: MULTI CHIP TD62M4503AFN BIPO LAR DIGITAL INTEGRATED CIRCUIT POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Pow er M O S FET 2SK1078 x4 and Diodes (1 SS 184). FEATURES • 4V Drive • Low ON Resistance : R d S (O N ) =0-580 (Typ.)

2SK1078

Abstract: 2SK107
Contextual Info: FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1078 INDUSTRIAL APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS Unit in mm 1.6.MAX. 4-6MAX. 1.7 MAX. FEATURES : • 4-Volt Gate Drive

2SK1079

Contextual Info: TOSHIBA 2SK1079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 079 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. INDUSTRIAL APPLICATIONS _ Unit in mm 1.6MAX.