2SK112 Search Results

transistor 2SK1120

Abstract: CL226 2SK1120
Contextual Info: TOSHIBA 2SK1120 Field Effect Transistor Industrial Applications Unit in m m Silicon N Channel MOS Type rc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

TH12E

Abstract: 2SK1123 MEI-1202 TEA-1035 esio Nec AC 160
Contextual Info: DATA SHEET NEC 1N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1123 À SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION 2SK1123 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance

2SK1122

Abstract: TEA-1035 MEI-1202 tf155
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ÆÊ^BBS. NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1122 SWITCHING N-CHANIMEL POWER MOS FET

Contextual Info: NEC S t •is — h MOS M O S F ield E ffe c t P o w e r T ra n s is to r 2SK1122 7 N + * J W < r7 — 4 x N f t i'i« / N " 7 - M 0 S i : U ^ > ÎEÎA^'fS < , X j 'i / 7 i fc, l 5 V SïÜÎ3UC<7 M ÎÎ ’ mm) f-'j -r f > ^"#'14 b iStiX^^ôfzàb, 7 K,

TRANSISTOR k1120

Abstract: k1120
Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)

2SK1123

Abstract: MP-88
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SK1123 N チャネル パワーMOS FET スイッチング用 2SK1123 は，N チャネル縦形パワーMOS FET で，5 V 電源系 IC の出力による直接駆動が可能な高速スイッチング

transistor 2SK1120

Contextual Info: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII -5 IN D U S T R IA L A P P L IC A T IO N S U n it in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

2sk1124

Abstract: YS 150 003
Contextual Info: 2SK1124 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CH O PPER REGULATOR, DC-DC C O NVERTER AND M OTOR Unit in m m D R I V E APPLICATIONS. • L o w Dra i n - S o u r c e O N R e s i s t a n c e : Rjjg(0N)= -022SÎ( T y p .)

k1120

Abstract: TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA
Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current

2sk129

Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119

2SK1123

Abstract: MP-88 Nec AC 160
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1123 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1123 is N-Channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS on 1 = 27 mΩ MAX. (VGS = 10 V, ID = 20 A)

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE nr-MOSn 2SK1120 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. SWITCHING POWER SUPPLY APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. A FEATURES: •Low Drain-Source ON Resistance : RDS(0N)=1.5ß (Typ.)

2SK1123

Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC 1N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1123 À SWITCHING N-CHANNEL POWER MOS FET

Contextual Info: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,

2SK1120

Contextual Info: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 4.0S (Typ.)

Nec AC 160

Abstract: NEC 12E 2SK1123 MEI-1202 TEA-1035 ScansUX882
Contextual Info: DATA SHEET NEC iN-CHANNEL W MOS i FIELD i EFFECT POWER TRANSISTOR r 2SK1123 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1123 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance

TRANSISTOR k1120

Abstract: 2sk1120
Contextual Info: 2SK1120 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current

2SK112

Abstract: pa 0016 equivalent equivalent transistor c 495 ifn112 NJ132H
Contextual Info: E4 9 -9 7 IF N 1 1 2 N -C H A N N E L SILICO N JU N CTIO N FIELD-EFFECT TRANSISTOR LOW NOISE, HIGH GAIN Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

D1843

Abstract: 2SK1122 k1995 TC-7539 MP-88
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SK1122 N チャネル パワーMOS FET スイッチング用 2SK1122 は，N チャネル縦形パワーMOS FET で，5 V 電源系 IC の出力による直接駆動が可能な高速スイッチング

2sk112

Contextual Info: 9-97 E4 IFN112 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN • Equivalent to Japanese 2SK112 Absolute maximum ratings at TA= 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Continuous Forward Gate Current 10 mA

TEA-1035

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC iN-CHANNEL W MOS i FIELD i EFFECT POWER TRANSISTOR r 2SK1123 SWITCHING N-CHANNEL POWER MOS FET

Contextual Info: 2SK1120 TOSHIBA TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL MOS TYPE tt- M O S I I -5 2 S K 1 120 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS : Rd S(ON) 1 5 .9 M A X -

pa 0016 equivalent

Abstract: 2sk112
Contextual Info: E4 8-94 IFN112 N - C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N S IS T O R LOW NOISE, HIGH GAIN Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Vottage - 50 V Continuous Forward Gate Current