2SK118 Search Results

2SK1185

Abstract: FM20
Contextual Info: 2SK1185 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics (Ta = 25ºC) Ratings typ Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±5 A I DSS 250 µA VDS = 100V, VGS = 0V

2SK1181

Contextual Info: 2SK1181 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±13 A I DSS A VTH 2.0 8.5 ±52 (Tch ID (pulse) 150ºC) min 500 I D = 250µA, VGS = 0V

SLA5038

Abstract: 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848
Contextual Info: 3 Power MOSFETs 3-1. MOSFETs 3-2. MOSFET Arrays 25 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419

condenser microphone 20hz

Abstract: 2SK118
Contextual Info: TOSHIBA 2SK118 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 18 Unit in mm GENERAL PURPOSE A N D IM PEDANCE CONVERTER A N D CONDENSER MICROPHONE APPLICATIONS 4.2 MAX. • • • High Breakdown Voltage High Input Impedance Low Noise

2SK1186

Abstract: FM20
Contextual Info: 2SK1186 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ID ±9 A I DSS A VTH 2.0 W Re (yfs) 2.4 ±36 (Tch ID (pulse) 150ºC) 30 (Tc = 25ºC)

2SK1177

Abstract: 2SK2420 2SK1180
Contextual Info: 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419 22.0 35 EAS RDS (ON) max (VGS = 10V) Ciss (typ)

2SK118

Abstract: 2SK1182 2SK118+equivalent
Contextual Info: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)

2SK3460

Abstract: 2SK2710A 2SK3332 2SK3460 equivalent 2SK2708 FKV550T 2SK1190 2SK1191 2SK2706 2SK3199 equivalent
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SJ424* VGSS (V) ID (A) ID (pulse) (A) PD (W) ±5 ±20 25 ±20 ±8 ±32 ±20 ±2.5 ±10 500 ±20 ±8.5 2SK1180 500 ±20 2SK1181 500 2SK1183 −60 ±20 2SJ425 −60

2SK1183

Abstract: FM20
Contextual Info: 2SK1183 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol (Ta = 25ºC) Ratings typ min Unit max Conditions VDSS 200 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA

2SK1187

Abstract: FM20
Contextual Info: 2SK1187 External dimensions 1 . FM20 Absolute Maximum Ratings Ratings Unit Symbol VDSS 100 V V BR DSS VGSS ±20 V I GSS ID ±12 A I DSS A VTH 2.0 W Re (yfs) 4.4 58 mJ RDS (on) 0.12 Tch 150 ºC Ciss Tstg –55 to +150 ºC ±48 (Tch 35 (Tc = 25ºC) PD

2SK1181

Contextual Info: 2SK1181 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±13 A I DSS A VTH 2.0 85 (Tc = 25ºC) W Re (yfs) 8.5 ±52 (Tch ID (pulse) PD 150ºC)

2SK1185

Abstract: FM20
Contextual Info: 2SK1185 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ID ±5 A I DSS A VTH 2.0 W Re (yfs) 1.5 ±20 (Tch ID (pulse) 150ºC) 25 (Tc = 25ºC)

2sk129

Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119

2SK1186

Abstract: FM20
Contextual Info: 2SK1186 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol min Unit max Conditions VDSS 100 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±9 A I DSS

2SK1184

Abstract: FM20
Contextual Info: 2SK1184 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol min Unit max Conditions VDSS 200 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±5 A I DSS

2SK1189

Contextual Info: TOSHIBA 2SK118 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 9 <; K 1 1 8 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 4.2 MAX. • • • High Breakdown Voltage High Input Impedance Low Noise

2SK1184

Abstract: FM20
Contextual Info: 2SK1184 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics (Ta = 25ºC) Ratings typ Symbol Ratings Unit Symbol VDSS 200 V V(BR) DSS VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±5 A I DSS 250 µA VDS = 200V, VGS = 0V

2SK1187

Abstract: FM20
Contextual Info: 2SK1187 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ±12 ID ±48 (Tch ID (pulse) 150ºC) 35 (Tc = 25ºC) PD min (Ta = 25ºC) Ratings typ

Contextual Info: T O SH IB A 2SK118 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 18 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 4.2MAX. • • • High Breakdown Voltage High Input Impedance Low Noise

2SK1188

Abstract: FM20
Contextual Info: 2SK1188 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V(BR) DSS VGSS ±20 V I GSS ID ±10 A I DSS A VTH 2.0 25 (Tc = 25ºC) W Re (yfs) 2.2 ±40 (Tch ID (pulse) PD 150ºC)

2SK1180

Contextual Info: 2SK1180 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics (Ta = 25ºC) Ratings typ Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±10 A I DSS 250 µA VDS = 500V, VGS = 0V

2SK1188

Abstract: FM20
Contextual Info: 2SK1188 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Ratings Unit Symbol min (Ta = 25ºC) Ratings typ Unit max Conditions VDSS 60 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±10 A I DSS

2sk170 FET

Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Contextual Info: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch

2SK118

Contextual Info: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)