T0220F
Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)
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2sk10822sk9622sk1217t03pf+122sk15122sk15112sk1008-01t02202sk1010-01t0220ft0-220f2sk10842sk13882mi200f-0252sk10182sk1390
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2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Contextual Info: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
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001ss725-35kg2sk1171900 v 9 amp mosfet+82sk10152sk7262sk15112sk1222j5452sk10182sk92sk151
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2sk1005
Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Contextual Info: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn
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001ss7ct03pt-39-132mi50f-050+162mi50s-0502mi100f-0252mi100f-0502mi200f-0256mi15fs-0506mi20fs-0252sk1005t0-220ft0220f2sk10102sk10112sk12172sk11052sk9562sk10842sk1101
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2SK962
Abstract: T03P 2MI200F-025
Contextual Info: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)
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2sk10822sk9622sk12172sk1512+82sk1511t03pf2sk1008-012sk1010-012sk1012-012sk1014-01t03p2mi200f-025
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90T03P
Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
Contextual Info: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn
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fap-11t03pf2sk957-01t0220f+152sk958-01t02202sk959-012sk1548-012sk1024-0190t03p2sk956100022sk906a2sk1082t0092sk13882sk16612sk900fuji semiconductors
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2SK1073
Abstract: lm815 2SK1074 LM8002 2SK1078 2SK1079 2SK1082 2SK1092 2SK1084 2SK1100
Contextual Info: m s tí: % m & m iS H f V j Hi A K V * * 2S K 1 0 6 9 H # LF A J N D -4 0 G D S BÍL LF/HF A J N D -2 2 G D O 2SK1074 S M 2SK1078 2SK1079 të S P d/Pc h 2SK1070 2SK1073 £ 1 9} * (V) - 22 0 & (A) * (W) I gss (max) (A) Vg s (V) (min) (A) % (max) V d s (A)
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2sk10692sk10702sk10732sk1074+132sk1078130nstyp2sk1096120nstypvdd-30v2sk1097lm815lm80022sk10792sk10822sk10922sk10842sk1100
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523a1
Abstract: 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900
Contextual Info: COLLMER SEMICONDUCTOR INC 34E S53Û7T2 » Ü001SS7 1 ICOL "T'3P\- 3 PUI1 [lU.IM sO’OSOE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on VGS + /- 30V Reduced turn off time High avalanced ruggedness VGS + /- 30V, Reduced turn off time
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001ss725-35kg523a12sk955+82sk956-01 equivalent2sk9562sk10182sk956 equivalent2sk11442sk13882sk725 equivalent2sk900
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2SK1506 22
Abstract: 2SK1388 2SK1084 2SK1090 2SK1390 2SK1083M 2SK1096M 2SK1505M 2SK1822-01M 2SK1823-01
Contextual Info: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 0001Ô72 Hñfi BICOL <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low R d S ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01
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2sk1822-01mt0220f152sk1823-01t03pf+122sk1969-012sk1818m2sk19792sk12762sk1506 222sk13882sk10842sk10902sk13902sk1083m2sk1096m2sk1505m
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k1507
Abstract: K1507 MOSFET 90T03P 2SK1081 2SK1276 2SK1821 2SK1388 2SK1661 90.T03P 2SK1084
Contextual Info: FUJI [ITLilC&irOgDE COLLHER SEMICONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low
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t03pf2sk10812sk956-012sk1385-01+152sk957-01t0220f2sk958-01t02202sk959-012sk1548-01k1507k1507 mosfet90t03p2sk12762sk18212sk13882sk166190.t03p2sk1084
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2SK1969-01
Contextual Info: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 G001Ô72 4êfi « C O L <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low RdS ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01
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2sk1822-01m2sk1823-012sk1969-01t0220f15+6t03pf2sk1505m2sk20482sk13882sk1083m2sk1096m
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2SK1217
Abstract: 2SK962 2SK1512 MOSFET Modules 2SK1008-01 2SK1010-01 2SK1012-01 2SK1082 2SK1511 2SK1171
Contextual Info: COLLHER SEMICONDUCTOR INC 22307^2 ODGISTT OTT « C O L MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)
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2sk10822sk9622sk1217t03pf+82sk15122sk15112sk1008-01t02202sk1010-01mosfet modules2sk1012-012sk1171
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2SK1082
Abstract: T0220F 2SK1512 T0-220F 2SK1018-01 2SK1084 2SK1388 2SK1217 2SK1090 2SK1276
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss 0 0 900 900 900 900 1000 C h aracteristics (Tc=25°C)
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2sk10822sk9622sk1217t03pf+122sk15122sk15112sk1008-01t02202sk1010-01t0220ft0-220f2sk1018-012sk10842sk13882sk10902sk1276
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k1507
Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
Contextual Info: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn
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t0220f15k1663k1507k1507 mosfet+790t03p25k9562sk9562sk16612sk15072sk13881n05
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2SK1661
Abstract: 2SK727 2sk1084 2SK1090 2SK1024 2sk1021 2SK1385 2SK1821
Contextual Info: FUJI [ITLilC&irOgDE COLLHER SEMI CONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low
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t03pf2sk16612sk7272sk1084+52sk10902sk10242sk10212sk13852sk1821
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