XN1D873 Search Results

XN1D873

Contextual Info: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Drain-coupled FETs) • Reduction of the mounting area and assembly cost by one half

2SK1103

Abstract: XN1D873
Contextual Info: Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 0 to 0.1 2SK1103 x 2 elements • Absolute Maximum Ratings 1 : Gate Tr1 2 : Gate (Tr2) 3 : Source (Tr2) (Ta=25˚C) Parameter

FET121

Abstract: 2SK1103 XN0D873 XN1D873
Contextual Info: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 4 5 1.50+0.25 –0.05 3 1 1.1+0.2 –0.1 10˚ • 2SK1103 x 2 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● ● Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half.

FET121

Contextual Info: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 1.50+0.25 –0.05 3 1 • Basic Part Number 0.65±0.15 0.30+0.10 –0.05 10˚ 1.1+0.2 –0.1 • 2SK1103 x 2 Drain current Gate current

2SK1103

Abstract: XN0D873 XN1D873 FET121
Contextual Info: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 5 2 1 0.65±0.15 0.30+0.10 –0.05 • Basic Part Number 10˚ 1.1+0.2 –0.1 • 2SK1103 x 2 Parameter Symbol Rating Unit VGDS −50 V Drain current

2SK621

Abstract: xn7651 pnp and npn Mini Type (D7) 360-200 2SK1103 2SK1842 2SK198 UN2213 XN1871
Contextual Info: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . . .n Main Characteristics H rrm r1 V ds Application U U Li Neh 2 elements XN1871 Low noise amp. switching n (A) (V) XN1872 * 30 0.02 50 0.1 v,„ Idss (V) (mA)

2SK621

Contextual Info: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D 15) n Main Characteristics n V ds Application ü * V dsx LJ LI LI U LJ Neh 2 elements (V) *30 50 XN1872 n (A) (V) Basic gm loss (mA) (mS) 0.02 0.5 - 1 2 0.1 - V ds Id (mA)

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

Contextual Info: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . .n U U Li u u u Neh 2 elements Nch 2 elements Hrrmr1 Application Low noise amp. switching Main Characteristics Vds * Vdsx (V) XN1872 n (V) 0.1 1.5 —3.5 Id