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    TPCA8105 Datasheets (2)

    Toshiba
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TPCA8105
    		Toshiba Field Effect Transistor Silicon P Channel MOS Type Original PDF 257.63KB 7
    TPCA8105(TE12L,Q,M
    		Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6A SOP-8 ADV Original PDF 7

    TPCA8105 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TPCA8105

    Contextual Info: TPCA8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCA8105 Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Low drain-source ON resistance : RDS (ON) = 23 mΩ (typ.) • High forward transfer admittance :|Yfs| = 14 S (typ.)


    Original     		tpca8105 PDF

    TPCA8105

    Contextual Info: TPCA8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOS III TPCA8105 Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Low drain-source ON-resistance : RDS (ON) = 23 mΩ (typ.) (VGS = − 4.5V）


    Original     		tpca8105 PDF

    TPCA8105

    Abstract: MARKING 2A
    Contextual Info: TPCA8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCA8105 Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 • Low drain-source ON resistance : RDS (ON) = 23 mΩ (typ.) • High forward transfer admittance :|Yfs| = 14 S (typ.)


    Original     		tpca8105marking 2a PDF

    TPCA8105

    Contextual Info: TPCA8105 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOS III TPCA8105 ○ ノートブック PC 用 ○ 携帯電子機器用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。


    Original     		tpca8105 PDF

    TPCA8105

    Contextual Info: TPCA8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCA8105 Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.5±0.1 0.4±0.1 Low drain-source ON resistance : RDS (ON) = 23 mΩ (typ.) High forward transfer admittance :|Yfs| = 14 S (typ.)


    Original     		tpca8105 PDF

    tpca8105

    Contextual Info: TPCA8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCA8105 Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.5±0.1 0.4±0.1 Low drain-source ON resistance : RDS (ON) = 23 mΩ (typ.) High forward transfer admittance :|Yfs| = 14 S (typ.)


    Original     		tpca8105 PDF

    TPCA8105

    Abstract: TC2531
    Contextual Info: TPCA8105 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOS III TPCA8105 ノートブック PC 用 携帯電子機器用 0.5±0.1 単位: mm 1.27 0.4±0.1 0.05 M A 5 8 6.0±0.3 : RDS (ON) = 23mΩ (標準) （VGS = −4.5V） オン抵抗が低い。


    Original     		tpca8105tc2531 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		5252 f 1009 4-pintpc 8028marking s3h sot363tk8a50d equivalent+6tk6a65d equivalent2sk4112tpca8030-htoshiba laptop charging circuit diagramtk80a08k3tpca*8025 PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		bce0017b2sk20562sk16032sk1603 datasheet+7toshiba "ultra high speed" diode 1atransistor 2sk16032sk3561 equivalent2sk2915 equivalent1045y2sk3569 equivalent2sk1078 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		bce0017fe-28831bce0017g2sk3567 equivalent+92sk3569 equivalenttpca*8023tk8a50d equivalent2sk20562sk3878 equivalenttpca80232sk941 equivalent2sk3561 equivalent2sk1603 PDF

    tpc8118

    Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
    Contextual Info: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ


    Original     		tpcm8001-htpcm8003-htpcm8002-h2q/2007+12tpcm81021q/2007tpc8118svi 2004 atoshiba f5dtpc8026tpc8109oks2ctoshiba f5btpc8028marking tpc8107 sop8mosfet marking stp PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075 PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		bcj0082bbcj0082a2sk4207to220sis+8tpca*8023tk80a08k3tpc8119tk40a08k32sk4112ssm3j16fs2sk3568tpc8a03 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122 PDF

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		bce0017es-167bce0017f2sk3566 equivalent+92sk3562 equivalent2sk3561 equivalent2sk3878 equivalent2sk3568 equivalent2sk3911 equivalent2sk941 equivalenttpc8118 equivalent replacementtpc81182sk3767 equivalent PDF

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		tk12a10k3tk12a10ktk33a60vtpca*8065+6tk40e10k3ssm6k407tutpca*8064tk6a65d equivalenttpca*8036tk100g10n1 PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		bce0082atpc8118 equivalent replacementssm3j307tzener diode smd 071 a01 PDF

    2sk4110

    Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
    Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3


    Original     		bce0017ds-167bce0017e2sk4110+92sk41062sk41112sk3561 equivalent2sk3797 equivalent2sk2996 equivalent2sk2843 equivalent2sk2961 equivalent2sk41122sk3799 equivalent PDF

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		bcj0082cbcj0082btpca8077tk12a10k3+8tk25e06k3tpca*8030tj11a10m3ssm6j501nutpca8057-h2sk4112tpc8217-htk50e06k3a PDF

    SVI 2004 A

    Abstract: SVI 2004 TPC8028 tpc8026 toshiba f5d tpc8117 IC SEM 2004 tpc8118 toshiba smd marking SVI 2004 C
    Contextual Info: Medium Power MOSFETs Low Voltage＆ LowResistance series February, 2007 Copyright 2007, Toshiba Corporation. Low Resistance Trend 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI February, 2007 2 Trend Map on Power MOSFET for LiB PCM


    Original     		svi 2004 asvi 2004tpc8028tpc8026+6toshiba f5dtpc8117ic sem 2004tpc8118toshiba smd markingsvi 2004 c PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		scj0004osc-432sc18152sc732tm+142sc19592sa10152sc22402sa970gt45f122tk13a60ugt30f1232sk4207gt30j124igbt gt30f123gt30f122gt30g1222sc5471igbt gt30j124 PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		sce0004isc-432sc1815gt30j124+9smd transistor h2agt45f122tpcp8r01gt30f1232sc1815 smd typesmd marking 8l01h2a smd2sc54712sc5200 amplifiers circuit diagram PDF