JESD47F Search Results

IRF7946TR1PBF

Abstract: IRF7946TRPBF 6852 0.53
Contextual Info: PD - 97780 StrongIRFET™ IRF7946PbF Applications l l l l l l l l l DirectFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

igbt 50V 420A

Abstract: irg7ic irg7i 105MH
Contextual Info: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner

Contextual Info: IRGP6640DPbF IRGP6640D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 40A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6640DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 24A n-channel

IRFU4620

Abstract: IRFR4620TRPBF jedec package TO-252AA
Contextual Info: PD -96207A IRFR4620PbF IRFU4620PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS on typ. max. ID G

Contextual Info: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 60A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive

IRFP3006

Contextual Info: IRFP3006PbF VDSS 60V RDS on typ. max. 2.1m 2.5m ID (Silicon Limited) 270A ID (Package Limited) 195A D G D S G S Applications • High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching

Contextual Info: FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 35 35 A Applications  Control and Synchronous MOSFETs for synchronous buck converters

Contextual Info: IRFH8325PbF HEXFET Power MOSFET VDS Vgs max RDS on max 30 V ± 20 V 5.0 (@VGS = 10V) (@VGS = 4.5V) 7.2 Qg typ 15 ID (@Tc(Bottom) = 25°C) 25 mΩ nC PQFN 5X6 mm i A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits

Contextual Info: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive

IRFHM830DTR2PBF

Abstract: IRFHM830DTRPBF AN-1154 J-STD-020D IRFHM830
Contextual Info: PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 4.3 mΩ 13 1.1 nC 40 (@Tc(Bottom) = 25°C) D 5 D Ω h 6 4 G 3 S D 7 2 S D 1 S 8 A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters

IRF9328TRPBF

Abstract: irf9328 IRF9328PBF IRF93
Contextual Info: PD - 97518 IRF9328PbF HEXFET Power MOSFET VDS -30 RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) V 11.9 mΩ 19.7 mΩ 18 nC -12 A Qg (typical) ID (@TA = 25°C) 6   ' 6   ' 6   ' *   ' SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application

1001T

Contextual Info: IRF7738L2TRPbF IRF7738L2TR1PbF DirectFET Power MOSFET ‚ Features •Advanced Process Technology Optimized for Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density

irg7ph50

Abstract: IRG7PH50K10DPBF IRG7PH50K10D 50A 1200V IRG7PH50K10D-EPBF
Contextual Info: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G E VCE(ON) typ. = 1.9V @ IC = 35A C G IRG7PH50K10DPbF E n-channel Applications

Contextual Info: IRG7RA13UPbF PDP TRENCH IGBT Key Parameters Features • Advanced Trench IGBT Technology  Optimized for Sustain and Energy Recovery circuits in PDP applications  Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency  High repetitive peak current capability

IRFB3407Z

Contextual Info: IRFB3407ZPbF HEXFET Power MOSFET Applications l l l Battery Management High Speed Power Switching Hard Switched and High Frequency Circuits G Benefits l l l l VDSS RDS on typ. max. ID (Silicon Limited) ID (Package Limited) D S Improved Gate, Avalanche and Dynamic

IRFB4137

Abstract: IRFB4137PBF
Contextual Info: IRFB4137PbF Application  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply High Speed Power Switching  Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS 300V RDS on typ. 56m

Contextual Info: StrongIRFET™ IRF7946PbF DirectFET Power MOSFET Applications l l l l l l l l l Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

Contextual Info: IRFB4115PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS on typ. max. ID (Silicon Limited) G S Benefits

Contextual Info: StrongIRFET™ IRFR7440PbF IRFU7440PbF HEXFET Power MOSFET Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Electronic ballast applications

Contextual Info: FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.10 m Qg (typical) 10 44 nC ID (@TC = 25°C) 45 45 A Applications  Control and Synchronous MOSFETs for synchronous buck converters

Contextual Info: IRF9395MPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits

Contextual Info: StrongIRFET™ IRFS7430PbF IRFSL7430PbF HEXFET Power MOSFET Applications l Brushed motor drive applications l BLDC motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies

Contextual Info: StrongIRFET™ IRFS7437PbF IRFSL7437PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches

Contextual Info: FastIRFET IRFH4255DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 2.10 m Qg (typical) 10 23 nC ID (@TC = 25°C) 30 30 A Applications  Control and Synchronous MOSFETs for synchronous buck converters