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    IRG7PH50 Search Results

    IRG7PH50 Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRG7PH50K10D-EPBF
    International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 90A 400W TO247AD Original PDF 12
    IRG7PH50K10DPBF
    International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 90A 400W TO247AC Original PDF 12
    IRG7PH50U-EP
    Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST TO247 Original PDF 366.82KB
    IRG7PH50UPBF
    International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 140A 556W TO247AC Original PDF 10
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    IRG7PH50 Price and Stock

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    International Rectifier IRG7PH50K10D-EPBF

    Trans IGBT Chip N-CH 1200V 90A 400W 3-Pin(3+Tab) TO-247AD Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IRG7PH50K10D-EPBF 9,608 50
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    • 100 $7.20
    • 1000 $6.44
    • 10000 $6.06
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    Rochester Electronics IRG7PH50K10D-EPBF 9,608 1
    • 1 -
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    • 100 $5.76
    • 1000 $5.15
    • 10000 $4.85
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    International Rectifier IRG7PH50K10DPBF

    Trans IGBT Chip N-CH 1200V 90A 400W 3-Pin(3+Tab) TO-247AC Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IRG7PH50K10DPBF 2,703 52
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    • 100 $6.96
    • 1000 $6.22
    • 10000 $5.86
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    Rochester Electronics IRG7PH50K10DPBF 2,703 1
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    • 100 $5.57
    • 1000 $4.98
    • 10000 $4.69
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    ComSIT USA IRG7PH50K10DPBF 375
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    Infineon Technologies AG IRG7PH50UPBF

    IRG7PH50UPBF, IGBT TRANSISTOR, 140 A 1200 V, 30KHZ, 3-PIN TO-247AC
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    RS IRG7PH50UPBF Bulk 10
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    • 10 $22.45
    • 100 $22.45
    • 1000 $22.45
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    International Rectifier IRG7PH50UPBF

    Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
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    Rochester Electronics IRG7PH50UPBF 3 1
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    • 100 $5.27
    • 1000 $4.72
    • 10000 $4.44
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    International Rectifier IRG7PH50K10DEPBF

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA IRG7PH50K10DEPBF 200
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    IRG7PH50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    irg7ph50

    Abstract: IRG7PH50K10DPBF IRG7PH50K10D 50A 1200V IRG7PH50K10D-EPBF
    Contextual Info: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G E VCE(ON) typ. = 1.9V @ IC = 35A C G IRG7PH50K10DPbF E n-channel Applications


    Original
    irg7ph50k10dpbfirg7ph50k10d-epbfrg7ph50k10depbfirg7ph50k10dpbf/irg7ph50k10d-epbf+6o-247aco-247adjesd47firg7ph50irg7ph50k10d50a 1200v PDF

    Contextual Info: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G VCE(ON) typ. = 1.9V @ IC = 35A G E n-channel Applications • Industrial Motor Drive


    Original
    irg7ph50k10dpbfirg7ph50k10d-epbfirg7ph50k10do-247ac+2o-247adjesd47f PDF

    irg7ph50

    Contextual Info: PD - 97549 IRG7PH50UPbF IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original
    irg7ph50upbfirg7ph50u-epo-247adirg7ph50 PDF

    irg7ph50

    Abstract: IRG7PH50U IRG7PH50UPBF irg7ph50udpbf 80V-0 C-150 irg7ph*50ud
    Contextual Info: PD - 97549 IRG7PH50UPbF IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original
    irg7ph50upbfirg7ph50u-epo-247adirg7ph50+5irg7ph50uirg7ph50udpbf80v-0c-150irg7ph*50ud PDF

    Contextual Info: IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 65A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel Applications • Industrial Motor Drive • UPS


    Original
    irg7psh54k10dpbfsuper-247jesd47f PDF