Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRG7PH50U Search Results

    IRG7PH50U Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRG7PH50U-EP
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST TO247 Original PDF 366.82KB
    IRG7PH50UPBF
    		International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 140A 556W TO247AC Original PDF 10
    SF Impression Pixel

    IRG7PH50U Price and Stock

    Select Manufacturer

    Infineon Technologies AG IRG7PH50U-EP

    IGBT TRENCH 1200V 140A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG7PH50U-EP Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG IRG7PH50UPBF

    IGBT TRENCH 1200V 140A TO-247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG7PH50UPBF Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    RS IRG7PH50UPBF Bulk 10
    • 1 -
    • 10 $22.45
    • 100 $22.45
    • 1000 $22.45
    • 10000 $22.45
    		Get Quote

    International Rectifier IRG7PH50UPBF

    Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRG7PH50UPBF 3 1
    • 1 -
    • 10 -
    • 100 $5.27
    • 1000 $4.72
    • 10000 $4.44
    		Buy Now
    Vyrian IRG7PH50UPBF 3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IRG7PH50U Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    irg7ph50

    Contextual Info: PD - 97549 IRG7PH50UPbF IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		IRG7PH50UPbF IRG7PH50U-EP O-247AD irg7ph50 PDF

    irg7ph50

    Abstract: IRG7PH50U IRG7PH50UPBF irg7ph50udpbf 80V-0 C-150 irg7ph*50ud
    Contextual Info: PD - 97549 IRG7PH50UPbF IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		IRG7PH50UPbF IRG7PH50U-EP O-247AD irg7ph50 IRG7PH50U IRG7PH50UPBF irg7ph50udpbf 80V-0 C-150 irg7ph*50ud PDF