IRG7PH50UDPBF Search Results
IRG7PH50UDPBF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
irg7ph50Contextual Info: PD - 97549 IRG7PH50UPbF IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient |
Original |
IRG7PH50UPbF IRG7PH50U-EP O-247AD irg7ph50 | |
irg7ph50
Abstract: IRG7PH50U IRG7PH50UPBF irg7ph50udpbf 80V-0 C-150 irg7ph*50ud
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Original |
IRG7PH50UPbF IRG7PH50U-EP O-247AD irg7ph50 IRG7PH50U IRG7PH50UPBF irg7ph50udpbf 80V-0 C-150 irg7ph*50ud |