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    IRG7I Search Results

    IRG7I Datasheets (2)

    International Rectifier
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRG7I313UPBF
    International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 330V 20A 34W TO220ABFP Original PDF 7
    IRG7IA19UPBF
    International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 360V 30A 35W TO220AB Original PDF 7
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    IRG7I Price and Stock

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    Infineon Technologies AG IRG7I313UPBF

    MOSFET; 330V; 20.000A; FULLPAK-220
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    RS IRG7I313UPBF Bulk 350
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    • 1000 $1.93
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    Quest Components IRG7IC30FD 327
    • 1 $33.27
    • 10 $33.27
    • 100 $26.62
    • 1000 $25.79
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    Quest Components IRG7IC30FDPBF 40
    • 1 $18.75
    • 10 $16.67
    • 100 $15.42
    • 1000 $15.42
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    Quest Components IRG7IA13UPBF 35
    • 1 $5.00
    • 10 $3.67
    • 100 $3.33
    • 1000 $3.33
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    Quest Components IRG7I313U 32
    • 1 $3.51
    • 10 $2.57
    • 100 $2.34
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    IRG7I Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    igbt 50V 420A

    Abstract: irg7ic irg7i 105MH
    Contextual Info: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner


    Original
    irg7ic18fdpbfo-220abigbt 50v 420airg7ic+2irg7i105mh PDF

    Contextual Info: PD - 97636 IRG7IA13UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original
    irg7ia13upbfo-220 PDF

    irg7ic28u

    Abstract: IRG7IC28 irg7ic 038341 IRG7IC28UPBF irg7i
    Contextual Info: PD - 97562 IRG7IC28UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability


    Original
    irg7ic28upbfo-220abirg7ic28uirg7ic28+3irg7ic038341irg7i PDF

    irg7ic

    Abstract: IRG7IC30FDPBF
    Contextual Info: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G


    Original
    irg7ic30fdpbfo-220abirg7ic PDF

    Contextual Info: PD - 97636A IRG7IA13UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original
    7636airg7ia13upbfo-220 PDF

    IRG7I313UPBF

    Abstract: JESD22-A114 irg7i313u IRG7
    Contextual Info: PD - 97411 IRG7I313UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original
    irg7i313upbfo-220jesd22-a114irg7i313u+1irg7 PDF

    irg7i

    Contextual Info: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G


    Original
    irg7ic30fdpbfo-220abirg7i PDF

    Contextual Info: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A C E G E TO-220AB Full-Pak n-channel Applications • • • • Air Conditioner Compressor


    Original
    irg7ic20fdpbfo-220ab PDF

    Contextual Info: IRG7IC23FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 9.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 18A C G E TO-220AB Full-Pak n-channel Applications • • • • E Air Conditioner Compressor


    Original
    irg7ic23fdpbfo-220ab PDF

    IRG7IC28U

    Contextual Info: PD - 97562 IRG7IC28UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability


    Original
    irg7ic28upbfo-220abirg7ic28u PDF

    pdp driver

    Abstract: JESD22-A114
    Contextual Info: PD -96273 PDP TRENCH IGBT IRG7I319UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability


    Original
    irg7i319upbfo-220abpdp driverjesd22-a114 PDF

    Contextual Info: PD - 97758 IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V


    Original
    irg7ic30fdpbfo-220ab PDF

    irg7ic

    Contextual Info: IRG7IC23FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 9.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 18A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner


    Original
    irg7ic23fdpbfo-220abirg7ic PDF

    Contextual Info: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A C E G E Applications • • • • TO-220AB Full-Pak n-channel Air Conditioner Compressor


    Original
    irg7ic18fdpbfo-220ab PDF

    IRG7ia

    Abstract: IRG7IA13UPBF igbt display plasma
    Contextual Info: PD - 97636A IRG7IA13UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original
    7636airg7ia13upbfo-220irg7ia+1igbt display plasma PDF

    wg65

    Abstract: IRG7IA19U
    Contextual Info: PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features l l l l l Key Parameters Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability


    Original
    pd-96356irg7ia19upbfo-220abi840g+2wg65irg7ia19u PDF

    irg7ic

    Abstract: transistor IC 12A 400v IRG7
    Contextual Info: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner


    Original
    irg7ic20fdpbfo-220abirg7ictransistor ic 12a 400v+1irg7 PDF

    Contextual Info: PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features l l l l l Key Parameters Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability


    Original
    pd-96356irg7ia19upbfo-220abi840g PDF

    Contextual Info: PD - 97411 IRG7I313UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original
    irg7i313upbfo-220 PDF