IRF733 Search Results

irf7331

Abstract: F7101 IRF7101 MS-012AA
Contextual Info: PD - 94225 IRF7331 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance

Contextual Info: PD - 95266A IRF7331PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing

EIA-541

Abstract: F7101 IRF7101 IRF7338PBF
Contextual Info: PD - 95197 IRF7338PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω

HEXFET SO-8

Abstract: IRF7331
Contextual Info: PD - 94225A IRF7331 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance

RF730

Abstract: IRF733 IRF730 IRF731 IRF732 ISF730 JBF731
Contextual Info: Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors D 4.5A and 5.5A, 350V-400V rDs on = 1.0 0 and 1.5 f i Features:

IRF730

Abstract: IRF731 IRF733 IRF732 K 3911 K 3911 mosfet
Contextual Info: HE 0 I MÖ5S4S2 000053t, □ | Data Sheet No. PD-9.308J INTERNATIONAL RE CT IFIE R INTERNATIONAL RECTIFIER IOR T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* IRF730 IRF731 IRF732 IRF733 HEXFET TRAIMSISTOR5 N-CHANNEL 400 Volt, 1.0 Ohm HEXFET TO-220AB Plastic Package

IRF7331TRPBF-1

Contextual Info: IRF7331PbF-1 HEXFET Power MOSFET VDS RDS on max 20 V (@VGS = 4.5V) mΩ RDS(on) max 45 (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 30 13 nC 7.0 A G2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package

irf 1340

Abstract: 95266 HEXFET SO-8 transistor IRF 7101 EIA-541 F7101
Contextual Info: PD - 95266 IRF7331PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF730

Abstract: IRF732 mtm5n35 GR 733
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF730 IRF731 IRF732 IRF733 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS T h e se T M O S P o w e r FETs are d es igne d fo r high v o lta g e , high speed p o w e r sw itch in g ap p lication s

IRF7338

Abstract: MOSFET N-CHANNEL 60v 60A
Contextual Info: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET

F7101

Abstract: IRF7101 IRF7338
Contextual Info: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω

Contextual Info: NATL N-Channel Power MOSFETs Continued IRF732 IRF733 MTP5N35 2N6761 2N6762 IRF431 IRF830 IRF831 IRF833 TO-220 (37) TO-220 (37) TO-220 (37) TO-220 (37) TO-2Û4AA (42) TO-2Û4AA (42) TO-2Û4AA (42) TO-2Û4AA (42) T0-204AA (42) TO-2Û4AA (42) TO-220 (37) TO-220

IRF7333

Contextual Info: P D - 9.1700 International l R Rectifier IRF7333 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated N -C H A N N E L FET1 FET 2

IRF730

Abstract: IRF731 irf730 harris TA17414
Contextual Info: h a f r r is IRF730, IRF731, IRF732, IRF733 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

F7101

Abstract: IRF7101 IRF7338
Contextual Info: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET

M150C

Abstract: IRF730
Contextual Info: HE MICRO ELECTRONICS CORP bO W ññ QQQQ767 2 D PRELIMINARY i T -S V il IRF730 IRF731 IRF732 IRF733 Kái O Sff H IG H P O W E R M Ö S F E T s i _ _ _ - APPLICATIONS 1 • SWITCHING REGULATORS PartNuota

IRF7335D1

Contextual Info: PD- 94546 IRF7335D1 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Dual FETKY™ Co-Packaged Dual MOSFET Plus Schottky Diode

IRF731

Abstract: irf730 harris IRF730 IRF732 IRF733 TA17414 TB334 IRF733 harris irf7302
Contextual Info: IRF730, IRF731, IRF732, IRF733 S E M I C O N D U C T O R 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF7331PBF

Contextual Info: PD - 95266A IRF7331PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing

irf7333

Abstract: FET2 fet-1
Contextual Info: PD - 9.1700 In te rn a tio n a l IOR Rectifier IRF7333 PRELIMINARY HEXFET Power MOSFET • • • • • • Generation V Technology Ultra Low On-Resistance Dual N Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated

transistor sta 733

Abstract: IRF 730 TRANSISTOR IRF 318 J CL66 irf 80 n Ultrasonic power generator schematic irf transistors IRF730FI 730 mos IRF732
Contextual Info: 30E D m 7 ^ 2 3 7 OD2T7*iS a_• | / T 7 S GS-THOM SO N IRF 730/FI-731/FI 4 T /W[ « [ I » ! « ! _ IRF 732/FI-733/FI 1 6 S-THOMSON TYPE V DSS IRF730 IRF730FI IRF731 IRF731FI IRF732 IRF732FI IRF733 IRF733FI 400 V 400 V 350 V 350 V 400 V 400 V 350 V

IRF730

Abstract: IRF731 IRF733 RF733 transistor IRF730 IRF732 LMIT
Contextual Info: 3875081 G E SOL I D ST ATE T-39-11 □ 1 Standard Pow er M O S F E T s _ IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C E M E N T M ODE N-Channel Enhancement-Mode Power Field-Effect Transistors

Contextual Info: PD- 95272 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output • Low Conduction Losses Co-Packaged • Low Switching Losses • Low Vf Schottky Rectifier • Lead-Free IRF7335D1PbF

IRF730

Abstract: 733 331 IRFP330 731 MOSFET IRF731 IRFP331 331Z Z012I IRF732 dd173d
Contextual Info: SA M S UN G E L E C T R O N I C S INC b7E D • V T b M l M S D G I T S T T 523 ■ SUCK N-CHANNEL POWER MOSFETS IRF730/731Z732/733 IRFP330/331/332/333 FEATURES • • • • • • • TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times