FET2 Search Results
FET2 Price and Stock
NXP Semiconductors LPC2478FET208,551- Trays (Alt: LPC2478FET208,551) |
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LPC2478FET208,551 | Tray | 882 | 39 Weeks | 126 |
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LPC2478FET208,551 | 187 |
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LPC2478FET208,551 | 1,134 | 18 Weeks | 126 |
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LPC2478FET208,551 | 630 | 18 Weeks | 126 |
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LPC2478FET208,551 | 126 |
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NXP Semiconductors LPC4330FET256,551- Trays (Alt: LPC4330FET256,551) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LPC4330FET256,551 | Tray | 90 | 26 Weeks | 90 |
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LPC4330FET256,551 | 160 |
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NXP Semiconductors LPC4357FET256K- Trays (Alt: LPC4357FET256K) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LPC4357FET256K | Tray | 64 | 39 Weeks | 450 |
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LPC4357FET256K | 305 |
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LPC4357FET256K | Bulk | 446 | 1 |
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LPC4357FET256K | 1,235 | 1 |
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LPC4357FET256K | 450 | 38 Weeks | 450 |
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NXP Semiconductors LPC4333FET256,551- Trays (Alt: LPC4333FET256,551) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LPC4333FET256,551 | Tray | 52 | 39 Weeks | 90 |
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LPC4333FET256,551 | 127 |
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LPC4333FET256,551 | Bulk | 90 |
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| LPC4333FET256,551 | Bulk | 1 |
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LPC4333FET256,551 | 90 |
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LPC4333FET256,551 | 38 Weeks | 90 |
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LPC4333FET256,551 | 38 Weeks | 90 |
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LPC4333FET256,551 | 540 |
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LPC4333FET256,551 | 6,963 |
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Vishay Intertechnologies MSP1C44R20FET25E3- Rail/Tube (Alt: MSP1C44R20FET25E3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MSP1C44R20FET25E3 | Tube | 70 |
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FET2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MTM76325
Abstract: MTM763250LBF FET2
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2002/95/ecmtm763250lbful-94sc-113da+2 | |
XP0497AContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) XP0497A Silicon N-channel MOSFET (FET1) Silicon P-channel MOSFET (FET2) For switching circuits • Features Package Two elements incorporated into one package (MOSFET) |
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2002/95/ecxp0497a2sj06742sk3938 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0497AG Silicon N-channel MOSFET (FET1) Silicon P-channel MOSFET (FET2) For switching circuits • Features Package Two elements incorporated into one package (MOSFET) |
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2002/95/ecup0497ag2sj0674g2sk3938g | |
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Contextual Info: Doc No. TT4-EA-12659 Revision. 2 Product Standards MOS FET FG6943010R FG6943010R Silicon N-channel MOSFET FET1 Silicon P-channel MOSFET(FET2) Unit : mm 1.6 0.2 0.13 6 5 4 1 2 3 1.2 1.6 For switching • Features Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant |
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tt4-ea-12659fg6943010rul-94fj330301+3 | |
FET2Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview Package FG654301 is N-P channel dual type small signal MOS FET employed small |
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2002/95/ecfg654301fet2 | |
2SJ0674
Abstract: 2SK3938 XP0497A mosfet Marking SA s
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2002/95/ecxp0497a2sj06742sk3938+1 | |
MTM76320Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview Package MTM76320 is the composite MOS FET (N-channel and P-channel MOS |
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2002/95/ecmtm76320 | |
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Contextual Info: FG6K42060L FG6K42060L Silicon N-channel MOSFET FET1 Unit: mm Silicon P-channel MOSFET (FET2) For Switching • Features Low drain-source ON resistance:RDS(on)typ. N-ch = 2 Ω (VGS = 4.0 V) P-ch:95 mΩ (VGS = -4.0 V) Halogen-free / RoHS compliant |
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fg6k42060lul-94sc-113da | |
FET2Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview Package FG654301 is N-P channel dual type small signal MOS FET employed small |
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2002/95/ecfg654301fet2 | |
AO4926Contextual Info: AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features FET1 FET2 VDS V = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5mΩ <24mΩ (VGS = 10V) <29mΩ (VGS = 4.5V) RDS(ON) < 16mΩ |
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ao4926 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FC694301 Silicon N-channel MOS FET For switching circuits • Absolute Maximum Ratings Ta = 25°C FET1 FET2 Overall Package Symbol Rating Unit Drain-source surrender voltage VDSS 30 V Gate-source surrender voltage |
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2002/95/ecfc694301 | |
2SJ0674G
Abstract: 2SK3938G UP0497AG
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2002/95/ecup0497ag2sj0674g2sk3938g | |
MTM76320Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Package Overview MTM76320 is the composite MOS FET (N-channel and P-channel MOS |
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2002/95/ecmtm76320mw/100 | |
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Contextual Info: FC5916010R FC5916010R Dual N-channel MOSFET Unit: mm For switching • Features Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant Marking Symbol: V5 Basic Part Number 4. Drain(FET2) 1. Gate(FET1) |
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fc5916010rul-94fk390601sc-107bb+1 | |
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FET2Contextual Info: Doc No. TT4-EA-13949 Revision. 2 Product Standards MOS FET MTM763250LBF MTM763250LBF Silicon N-channel MOSFET FET1 Silicon P-channel MOSFET (FET2) Unit : mm 2.0 For Switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 Low Drain-source On-state Resistance : |
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tt4-ea-13949mtm763250lbful-94fet2 | |
FET2Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG6K4206 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview Package FG6K4206 is the dual-type MOS FET (N-channel and P-channel) which is |
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2002/95/ecfg6k4206fet2 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0497AG Silicon N-channel MOSFET (FET1) Silicon P-channel MOSFET (FET2) For switching circuits • Package Two elements incorporated into one package (MOSFET) Incorporating a built-in gate protection-diode |
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2002/95/ecup0497ag2sj0674g2sk3938g | |
mtm76325Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . MTM76325 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview Package MTM76325 is the composite MOS FET (N-channel and P-channel MOS |
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2002/95/ecmtm76325 | |
2SK0665Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872G Silicon n-channel enhancement MOSFET For switching • Package ■ Features • 2SK0665 x 2 • Code Mini5-G2 • Pin Name 1: Drain (FET1) 2: Drain (FET2) 3: Gate (FET2) |
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2002/95/ecxn01872g2sk0665 | |
2SJ0674
Abstract: 2SK3938 UP0497A fet-1
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2002/95/ecup0497a2sj06742sk3938+1 | |
MTM7632Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview Package MTM76320 is the composite MOS FET (N-channel and P-channel MOS |
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2002/95/ecmtm76320mtm7632 | |
UP0497AG
Abstract: 2SJ0674G 2SK3938G
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2002/95/ecup0497ag2sj0674g2sk3938g | |
SLA5054Contextual Info: SLA5054 N-channel General purpose Absolute maximum ratings External dimensions A SLA 15-pin •Equivalent circuit diagram (Ta=25°C) Ratings Symbol FET1 FET2 FET3 VDSS 150 VGSS +20, –10 ID ±7 ±5 ±7 ID(pulse)*1 ±15 ±10 ±15 EAS*2 15 IAS 5 5 (Ta=25°C, with all circuits operating, without heatsink) |
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sla505415-pinpw100duty50 | |
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Contextual Info: Doc No. TT4-EA-10567 Revision. 2 Product Standards MOS FET MTM763200LBF MTM763200LBF Silicon N-channel MOSFET FET1 Silicon P-channel MOSFET (FET2) Unit : mm 2.0 For Switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 Low Drain-source On-state Resistance : |
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tt4-ea-10567mtm763200lbful-94 | |