CL66 Search Results

M66507

Abstract: 665S MAC66K
Contextual Info: 1 CL665S ユーザーズマニュアル プログラム開発支援ソフトウェア '98・11 作成 J2Y0004-18-51 ご 注 意 1. 本書に記載された内容は製品改善及び技術改良等により将来予告なしに変更することがありま

CL665S

Abstract: 665S OKI nX-8 MAC66K
Contextual Info: 1 CL665S User's Manual Program Development Support Software FIRST EDITION ISSUE DATE:Aug. 1997 E2Y0002-29-62 NOTICE 1. The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information

laf 0001 ic Substitution

Abstract: gs 3935 car central lock Car Central lock system circuit diagram of car central lock system 80386 microprocessor pin out diagram CD1400 CTSR LA 7804 OA CL-CD1400
Contextual Info: C I RR US LO GI C INC SlBfcikiB'i ODDlll* *J • CIR CL-CDUOO 'CIRRUS LOGIC Preliminary D ata Sheet T-7T-37-OS" FEATURES Four-channel Serial/Parallel Communications Engine with UNIX Character Processing Asynchronous Features ■ Software-programmable serial data rates up to

CL67

Abstract: CL66 Vishay 138D 138D306X0006C2 138D686X0006C2 CL66 CLR69
Contextual Info: 138D Vishay Wet Tantalum Capacitors Sintered Anode TANTALEX Capacitors Hermetically-Sealed with True Glass-to-Tantalum Seal FEATURES • Terminations: standard tin/lead SnPb , 100 % tin (RoHS compliant) available  Improved reliability through the use of a

ProMOS ddr2

Abstract: 2rx16 DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 V91676
Contextual Info: V916764B24QA 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR2 SDRAM SODIMM Features Description • The V916764B24QA memory module is organized as 67,108,864 x 64 bits in a 200 pin memory module. The 64M x 64 memory module uses 8 ProMOS 32M x 16 DDR2 SDRAMs. The x64 modules

V916765K24QA

Contextual Info: V916765K24QA 128M x 64 HIGH PERFORMANCE UNBUFFERED DDR2 SDRAM MODULE Features Description • 240-pin, unbuffered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

g5400

Contextual Info: V916732J24QC 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR2 SDRAM MODULE Features Description • • • • The V916732J24QC memory module is organized as 33,554,432 x 64 bits in a 240 pin memory module. The 32M x 64 memory module uses 4 ProMOS 32M x 16 DDR2 SDRAMs. The x64 modules are ideal for use in high performance computer

Contextual Info: V917565K24QA 128M x 72 HIGH PERFORMANCE UNBUFFERED DDR2 ECC SDRAM MODULE Features Description • 240-pin, unbuffered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

Contextual Info: V917564U24QA 512M x 72 HIGH PERFORMANCE REGISTERED DDR2 ECC SDRAM MODULE Features Description • 240-pin, registered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns

Contextual Info: V59C1G02168QBP HIGH PERFORMANCE 2Gbit DDR2 SDRAM 8 BANKS X 16Mbit X 16 3 25A 25 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time tCK3 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns Clock Cycle Time (tCK5) 3ns 3ns 2.5ns Clock Cycle Time (tCK6) 3ns 2.5ns

Contextual Info: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns

Contextual Info: V917565K24QA 128M x 72 HIGH PERFORMANCE UNBUFFERED DDR2 ECC SDRAM MODULE Features Description • 240-pin, unbuffered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

Contextual Info: V59C1512 404/804/164 QD*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 19A DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns

Contextual Info: V59C1512 404/804/164 QC HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V59C1G02168QBP HIGH PERFORMANCE 2Gbit DDR2 SDRAM 8 BANKS X 16Mbit X 16 3 25A 25 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time tCK3 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns Clock Cycle Time (tCK5) 3ns 3ns 2.5ns Clock Cycle Time (tCK6) - 2.5ns

Contextual Info: V917564U24QA 512M x 72 HIGH PERFORMANCE REGISTERED DDR2 ECC SDRAM MODULE Features Description • 240-pin, registered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

9.1 b3

Contextual Info: V59C1256 404/804/164 QA*I HIGH PERFORMANCE 256Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) PRELIMINARY 37 3 25 DDR2-533 DDR2-667 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V59C1256 404/804/164 QI HIGH PERFORMANCE 256 Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V59C1G01 808/168 QC HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns

Contextual Info: V917564K24QA 512M x 72 HIGH PERFORMANCE UNBUFFERED DDR2 ECC SDRAM MODULE Features Description • 240-pin, unbuffered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

Contextual Info: V91F565U24QC 128M x 72 HIGH PERFORMANCE FULLY BUFFERED DIMM FBDIMM Features Description • The V91F565U24QC memory module is organized as 134,217,728 x 72 bits in a 240 pin fully buffered ECC memory module. The 128M x 72 memory module uses 18 ProMOS 64M x 8 DDR2 SDRAMs. The x72