LMIT Search Results

Avantek S

Abstract: AVANTEK transistor ATF-20136
Contextual Info: AVANTEK 50E D INC 0AVANTEK • lmiTbb 0 0 0 b S 3 cl S ATF-10736 ATF-20136 0.5-12 GHz General Purpose Gallium Arsenide FET Avantek 36 micro-X Package1 Features • High Associated Gain: 12.5 dB typical at 4 GHz • Low Bias: V d s = 2 V , I d s = 20 mA • High Output Power: 20.0 dBm typical Pi dB

d28c256cz

Abstract: uPD28C256 WPH-2 BLC10 PD28C256
Contextual Info: N E C ELECTRONICS INC T^íMá'i ' L^lMit W NEC Electronics Inc. tlE D • b42?S2S 003544b 217 ■ NECE PPD28 C 256 32,768 X 8 -Bit CMOS EEPROM Description Pin Configuration The /¿PD28C256 is a 262,144-bit electrically erasable and programmable read-only memory EEPROM orga­

DC-10

Abstract: DC-20 FMS2027 FMS2027-000 MIL-HDBK-263
Contextual Info: FMS2027 Preliminary Datasheet v2.2 DC–20 GHZ MMIC SPDT NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Non-Reflective design Low Insertion loss 2.2 dB at 20GHz typical Very high isolation 40 dB at 20GHz typical

20GHZ

Abstract: FMA3008 MIL-HDBK-263
Contextual Info: FMA3008 FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the

FMS2027

Abstract: FMS2027-000 MIL-HDBK-263
Contextual Info: FMS2027 FMS2027 DC-20GHz MMIC LOW LOSS SPDT ABSORPTIVE SWITCH Package Style: Bare Die Product Description Features The FMS2027 is a low loss, high isolation broadband single-pole double-throw Gallium Arsenide switch, designed on the FL05 0.5 m switch process from RFMD. It

m514262

Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
Contextual Info: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.

84-1 LMI

Abstract: 22-A114-B FMS2021
Contextual Info: FMS2021 Advanced Product Information 1.1 DC- 6 GHz SPDT WLAN GaAs Low Loss Switch Features: ♦ ♦ ♦ ♦ Functional Schematic Suitable for Multi-band WLAN Applications Excellent low control voltage performance Very low Insertion loss <0.7 dB at 6GHz typical

LB1822

Abstract: 3 phase motor circuit diagrams 33182
Contextual Info: Ordering number:EN3318 Monolithic Digital IC LB1822 3-Phase Brushless Motor Predriver with Digital Speed Control Overview Package Dimensions The LB1822 is a monolithic predriver IC for controlling three-phase brushless motors and has an on-chip digital speed control circuit. The LB1822 is ideally suited for

MTP55N06Z

Abstract: TMOS E-FET
Contextual Info: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 18 mΩ This advanced high voltage TMOS E–FET is designed to

4250T

Abstract: LB1693 DIP20H sanyo brushless dc 36v brushless dc motor EN3295
Contextual Info: Ordering number:EN3295 Monolithic Digital IC LB1693 3-Phase Brushless Motor Driver Overview Package Dimensions The LB1693 is a driver IC for 3-phase brushless motors. It is ideally suited for office automation equipment and DC fan motors. unit:mm 3037A-DIP20H

Contextual Info: FUJITSU LTD 53E 1 • BTM^Sb 0002404 436 « F C A J T -4 e -2 -? *- A p ra m i FUJITSU Edition 1.0 DATASHEET' MB8441-45/-55 CMOS 64K-BIT DUAL PORT SRAM 8K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujtau M88441 it an 8K words x 8 bits dual-port high-performance Static Random

zero crossing detector using lm358

Abstract: ntp 3100 IC LM 258 smd PEB3265 DUSLIC DuSLICos TIP 298 LM 340 TS lm358 sum PEB 3265
Contextual Info: Dat a Sh eet , DS2 , Ju ly 20 00 DuSLIC Dual Channel Subscriber Line Interface Circuit PEB PEB PEB PEB PEB 3264/-2 Version 1.2 4264/-2 Version 1.1 3265 Version 1.2 4265/-2 Version 1.1 4266 Version 1.1 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g .

Contextual Info: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing

Contextual Info: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our

Block Diagram sle 66 pe infineon

Abstract: ntp 3200 DUSLIC DIN 6930 smd m2b OEN relays 5v caller id converter dtmf to fsk DuSLIC SICOFI LM 4265 data sheet CIT relay
Contextual Info: ICs for Communications DUAL CHANNEL SLICOFI-2, SLIC DuSLIC PEB PEB PEB PEB PEB 3264/-2 Version 1.1 4264/-2 Version 1.1 3265 Version 1.1 4265/-2 Version 1.1 4266 Version 1.1 Preliminary Data Sheet 10.99 DS 1 • DuSLIC Revision History: Current Version: 10.99

Contextual Info: DRAFT FMA3008 DRAFT FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the

60IDS

Abstract: x-band mmic
Contextual Info: FMA246 Preliminary Datasheet v2.3 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: • • • • • • • LAYOUT: 8.0 – 14.0 GHz Operating Bandwidth 2.5 dB Noise Figure 30 dB Small-Signal Gain 19 dm Output Power +6V Single Bias Supply Adjustable Operating Current

RFSW2041D

Contextual Info: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

20Frequency

Contextual Info: FMS2029 Production Datasheet v4.0 DC–20 GHZ MMIC SPST ABSORPTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Low insertion loss: 2.2 dB at 20 GHz High isolation: 50 dB at 20 GHz Absorptive input and output in off-state Excellent low control voltage performance

FMA2029

Contextual Info: FMA2029 Datasheet v2.2 DC–20 GHZ MMIC SPST NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Both ports terminated in 50Ω in off-state Low Insertion loss 2.2dB at 20 GHz typical Very high isolation 50dB at 20 GHz typical

M5M4V4260

Contextual Info: M 5 M 4 V 4 2 6 0 J , T P , R T - 6 ,-7 ,-8 ,- 6 S , - 7 S , " 8 S FAST PAGE MODE 4194304-B IT 262144-W O R D BY 16-B IT DYNAM IC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily o f 262144-w ord by 16-bit dynamic RAMs, fabricated w ith the high performance CMOS process, and is

Contextual Info: SP691A/693A/800L/800M SIGNAL PROCESSING EXCELLENCE Low Power Microprocessor Supervisory with Battery Switch-Over • Precision 4.65V/4.40V Voltage Monitoring ■ 200ms Or Adjustable Reset Time ■ 100ms, 1.6s Or Adjustable Watchdog Time ■ 50µA Maximum Operating Supply Current

wf vqe 24 d

Abstract: 2N5898 2N5989 225AB 25CC 2N5991 MBD5300 TO-225AB mbd-5300 Transistor J3T 3 pin
Contextual Info: MOTOROLA SC XSTRS/R F 12Ë D | b3L?254 OG 0MS?b ? | ^33 NPN MOTOROLA SEMICONDUCTOR 2N5989 2N5991 TECHNICAL DATA 12 AM PERE POWER PLASTIC COM PLEM ENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS COM PLEM ENTARY SILICON * '* .J .J. . designed fo r use In g eneral-purpose am p lifier and sw itching

sm 0038 receiver

Abstract: Bookham Technology Bookham P35-1110 NN12 P35-1110-0 P35-1110-1 JWT 4 pin 80IN 15PB 5AG
Contextual Info: MESFET for OPTO Receivers Performance Optimised to provide high gm and low gate leakage Features General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver High gm, typically 45mS Low gate leakage current, typically 10nA at -5 Volts