FPD7500 Search Results

Contextual Info: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing

FPD750

Abstract: MIL-HDBK-263 InP HBT transistor DS090609
Contextual Info: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing

KA 75008

Abstract: 75P008 NEC 426 M 50198 HC-43/U p008c PD7500 HC-18U HC-6U R/UPD75P008
Contextual Info: NEC pPD7500x/75P008 General-Purpose 4-Bit Microcomputers With Multiple l/Os NEC Electronics Inc. Description □ The /j PD7500 x/75P008 is a fam ily of single-chip CMOS m icrocom puters containing C PU , ROM, RAM, I/O ports, several tim er/counters, vectored interrupts, subsystem