2N3838
Abstract: 2N3838 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R 12E D I b3L7254 OQflbB?"! 4 | F 2N3838 CASE 610A-04, STYLE 1 MAXIMUM RATINGS Symbol Value Collector-Emitter Voltage VCEO 40 Vdc Collector 1 to Collector 2 Voltage Voftage Rating any Lead to Case VC1C2 ± 120 ±12 0 Vdc Collector-Base Voltage
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b3l72542n383810a-042n3838 motorola |
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TRIMMER capacitor 160 pF
Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Contextual Info: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e
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b3t72sm100a101jp501n4007bc337+11bd135tpv5055btrimmer capacitor 160 pftransistor bc337trimmer capacitor 10-40 pf22 pf trimmer capacitor1n4007 mttflinear amplifier 470-860zener diode 9.1470-860 mhz power amplifier 5 wcapacitor c3b
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MRH30PHXV
Contextual Info: MOT OROL A SC XSTRS/R F 2bE b3L7254 D QGTQS1S b MOTOROLA "FS7-IS' SEMICONDUCTOR • TECHNICAL DATA PRELIMINARY DATA MRH30PHXV, MRH30PHS /////// PROCESSED TO MIL-S-19500 RADIATION TOLERANT TRANSISTOR Discrete Military Operation 30 VOLT, 500 MILLIAMPERE BIPOLAR PNP
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b3l7254mrh30phxvmrh30phsmil-s-19500+240vdcb3b72s4
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MBR951
Abstract: BR951
Contextual Info: 15E D I b3L7254 MOTOROLA M OTOROLA SC 5 I XSTRS/R f ' 3 l 'J IS F SEMICONDUCTOR T E C H N IC A L DATA M RF951 M MBR951 M R F9 511 ,L T h e R F Line IMPN S ilic o n L o w N o ise , H igh -F re q u e n cy T r a n s isto rs lc = 100 m A L O W N O IS E H IG H F R E Q U E N C Y
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b3l7254rf951mbr951br951 |
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MPS911
Abstract: zt145
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency TVansistors MM BR911LT1 MPS911 . . . designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as
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o-226aaa/500br911lt1mps911+2mmbr911lt1zt145
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2n5680
Abstract: 2n5680 motorola 2N5679 MOTOROLA
Contextual Info: 2N5415, 2N5416 For Specifications, See 2N3439 Data. 2N5581/82 For Specifications, See 2N2218.A Data. M A X IM U M RATINGS 2N5680 2N5682 Untt 120 Vdc 120 Vdc Symbol 2N5679 2N5681 Collector-Emitter Voltage VCEO 100 Collector-Base Voltage VCBO 100 Emitter-Base Voltage
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2n54152n54162n34392n5581/82+72n22182n56792n56802n56822n56812n5680 motorola2n5679 motorola
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TA117
Contextual Info: AT MOTOROLA ^ r- 3 3 -3 5 Order this data sheet by MJ75BX120/D 890 79956 6367254 MOTOROLA SC XSTRS/R F DE I b3t.7E54 D D T T iS b 3 |” SEMICONDUCTOR TECHNICAL DATA MJ75BX120 N P N Silicon Pow er Transistor M odule Energy M anagem ent Series DUAL TRI-STAGE
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mj75bx120/dmj75bx120c4s702mk145bp+2j75bx120ta117
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