2005 - x-band mmic
Abstract: No abstract text available
Text: FMA411 X-BAND MMIC · PERFORMANCE 8.5 14.0 GHz Operating Bandwidth 2.6 dB Noise Figure 18 dB , /semis Revised: 11/03/05 Email: sales@filcsi.com FMA411 X-BAND MMIC ABSOLUTE MAXIMUM RATINGS1 , X-BAND MMIC · MECHANICAL OUTLINE: Notes: 1) All units are in microns, unless otherwise specified , FMA411 X-BAND MMIC · ASSEMBLY / BONDING DIAGRAM (50% / 75% BIAS SETTING): Phone: +1 408 , : sales@filcsi.com FMA411 X-BAND MMIC · ASSEMBLY / BONDING DIAGRAM (50% / 50% BIAS SETTING): Notes: ·
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FMA411
FMA411
x-band mmic
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x-band mmic
Abstract: MMIC X-band amplifier X-band amplifier FMA246 MIL-HDBK-263 x-band power amplifier
Text: PRELIMINARY · HIGH-GAIN X-BAND MMIC PERFORMANCE 8.0 14.0 GHz Operating Bandwidth 2.5 , : sales@filcsi.com PRELIMINARY FMA246 HIGH-GAIN X-BAND MMIC ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol , Email: sales@filcsi.com PRELIMINARY · FMA246 HIGH-GAIN X-BAND MMIC MECHANICAL OUTLINE , Email: sales@filcsi.com PRELIMINARY · FMA246 HIGH-GAIN X-BAND MMIC MECHANICAL OUTLINE , FMA246 is a 3-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over the 8 to 14
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FMA246
FMA246
MIL-STD-1686
MIL-HDBK-263.
100x100
x-band mmic
MMIC X-band amplifier
X-band amplifier
MIL-HDBK-263
x-band power amplifier
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x-band mmic
Abstract: x-band amplifiers MMIC X-band amplifier FMA411 MIL-HDBK-263
Text: PRELIMINARY FMA411 LOW-NOISE X-BAND MMIC · PERFORMANCE 8.5 14.0 GHz Operating , LOW-NOISE X-BAND MMIC ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Supply Voltage , : sales@filcsi.com PRELIMINARY · FMA411 LOW-NOISE X-BAND MMIC MECHANICAL OUTLINE: Notes: 1) All , FMA411 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 8.5 to , will reach temperature limits before the output stage. The aggregate MMIC thermal resistivity is
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FMA411
FMA411
MIL-STD-1686
MIL-HDBK-263.
100x100
x-band mmic
x-band amplifiers
MMIC X-band amplifier
MIL-HDBK-263
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2002 - x-band mmic core chip
Abstract: x-band MMIC MASWGM0001-DIE mmic core chip RO-P-DS-3057 MA03502
Text: Double-Throw Switch 4/6 MASWGM0001-DIE R/T MA03502 X-BAND MMIC CONTROL CHIP P2 R P3 T , Information Features 2.0-14.0 GHz GaAs MMIC Switch 2.0-14.0 GHz Operation 3 dB Insertion , X-Band control MMIC . These two chips form the core of a transceiver module. Mode Control Logic , Figure 5. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC , die attach of this MMIC . Follow the manufacturer's instructions. If solder is employed, use AuSn (80
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RO-P-DS-3057
MASWGM0001-DIE
MASWGM0001-Die
MA03502
MA03503,
x-band mmic core chip
x-band MMIC
mmic core chip
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2008 - x-band mmic
Abstract: FMA246 60IDSS 60IDS
Text: FMA246 Preliminary Datasheet v3.0 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: · · · · · · , Ports GENERAL DESCRIPTION: The FMA246 is a 3-stage, reactively matched pHEMT high-gain MMIC , before the output stage. The aggregate MMIC thermal resistivity is approximately 80°C/W. PAD LAYOUT , close to the MMIC as practical. 2 The configuration shown below will result in operating current bias , for the MMIC . For lower current operation, the 3rd stage can be set to 50% by bonding to the pad just
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FMA246
FMA246
x-band mmic
60IDSS
60IDS
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2007 - Not Available
Abstract: No abstract text available
Text: FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: ⢠⢠⢠⢠⢠⢠⢠â , -stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over the 8 to 14 GHz bandwidth. The , output stage. The aggregate MMIC thermal resistivity is approximately 80°C/W. PAD LAYOUT: PAD NAME , close to the MMIC as practical. 2 The configuration shown below will result in operating current bias , setting for the MMIC . For lower current operation, the 3 stage can be set to 50% by bonding to the pad
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FMA246
FMA246
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2006 - X-band Gan Hemt
Abstract: FMA246 A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for , temperature limits before the output stage. The aggregate MMIC thermal resistivity is approximately 80°C/W , de-coupling capacitor (150pF recommended value) should be placed as close to the MMIC as practical. 2 The , ) 50%, 50%, and 75%, which is the standard recommended bias setting for the MMIC . For lower current
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FMA246
FMA246
14GHz.
19dBm
FMA246-000
FMA246-000SQ
FMA246-000S3
DS090309
X-band Gan Hemt
A246
MIL-HDBK-263
x-band mmic
MIL-STD-1686
X-band GaAs pHEMT MMIC Chip
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2006 - x-Band Hemt Amplifier
Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over , stage. The aggregate MMIC thermal resistivity is approximately 80 C/W. 2 Pad Layout C Pad A B C , (150pF recommended value) should be placed as close to the MMIC as practical. 2The configuration shown , %, and 75%, which is the standard recommended bias setting for the MMIC . For lower current operation, the
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FMA246
FMA246
14GHz.
FMA246-000
FMA246-000SQ
FMA246-000S3
DS110503
x-Band Hemt Amplifier
x-band mmic
X-band GaAs pHEMT MMIC Chip
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2006 - Not Available
Abstract: No abstract text available
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for , output stage. The aggregate MMIC thermal resistivity is approximately 80ï°C/W. 2 Pad Layout  , value) should be placed as close to the MMIC as practical. 2 The configuration shown will result in , the standard recommended bias setting for the MMIC . For lower current operation, the 3rd stage can be
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FMA246
FMA246
14GHz.
FMA246-000SQ
FMA246-000
FMA246-000S3
DS110503
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2008 - 60IDS
Abstract: x-band mmic
Text: FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: · · · · · · · 8.0 14.0 GHz Operating , DESCRIPTION: The FMA246 is a 3-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over , reach temperature limits before the output stage. The aggregate MMIC thermal resistivity is , pF recommended value) should be placed as close to the MMIC as practical. 2 The configuration shown , %, which is the standard recommended bias setting for the MMIC . For lower current operation, the 3rd stage
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FMA246
FMA246
22A114.
MIL-STD-1686
MIL-HDBK-263.
60IDS
x-band mmic
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2011 - CMPA801B025
Abstract: CMPA801B025F x-band mmic 3.5 DC Jack
Text: Thermal Performance TCASE = 85°C X-Band MMIC on 440208 Pkg, .25" Thk Cu Fixture, Tcase=85C ThetaJC (C/W , CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC , Power Amplifier Cree's CMPA801B025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit ( MMIC , greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in , Frequency (GHz) Cree MMIC Power Amplifier Product Line Parameter Lower Frequency Upper Frequency1 Power
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CMPA801B025F
CMPA801B025F
CMPA80
1B025F
CMPA801B025
x-band mmic
3.5 DC Jack
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2011 - Not Available
Abstract: No abstract text available
Text: . - Transient Thermal Performance X-Band MMIC on 440208 Pkg,TCASE =Cu Fixture, Tcase=85â°C .25" Thk , CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC , Power Amplifier Creeâs CMPA801B025F is a gallium , ( MMIC ). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown , greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in , Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line
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CMPA801B025F
CMPA801B025F
CMPA80
1B025F
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2011 - Not Available
Abstract: No abstract text available
Text: . - Transient Thermal Performance X-Band MMIC on 440208 Pkg,TCASE =Cu Fixture, Tcase=85â°C .25" Thk , CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC , Power Amplifier Creeâs CMPA801B025F is a gallium , ( MMIC ). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown , greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in , Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line
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CMPA801B025F
CMPA801B025F
CMPA80
1B025F
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2011 - CMPA801B025
Abstract: X-band Internally Matched Power GaN HEMTs
Text: . - Transient Thermal Performance X-Band MMIC on 440208 Pkg,TCASE =Cu Fixture, Tcase=85â°C .25" Thk , CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC , Power Amplifier Creeâs CMPA801B025F is a gallium , ( MMIC ). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown , greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in , Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line
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CMPA801B025F
CMPA801B025F
CMPA80
1B025F
CMPA801B025
X-band Internally Matched Power GaN HEMTs
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2004 - FMM5061VF
Abstract: x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER , Drain Current [mA] P1dB FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs , ] 3 30 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by
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FMM5061VF
FMM5061VF
x-band power amplifier
ED-4701
x-Band High Power Amplifier
eudyna GaAs FET Amplifier
x-band mmic
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2005 - EMM5068VU
Abstract: x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
Text: ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC FEATURES High Output Power: Pout , =50 Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that , 1 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs , /EMM5068VU Preliminary X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD , Output Pow er [dBm ] 3 31 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT
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ES/EMM5068VU
EMM5068VU
x-band power amplifier
610 108 001
ED-4701
RO4003
MMIC X-band amplifier
1300M
CLASS D WITH 494 POWER amplifier diagram
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X-band amplifier
Abstract: 462 008 0004 00 AF
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm (typ.) High , DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for , -111A(C=100pF, R=1.5kâ¦) Edition 1.0 December 2005 1 EMM5068X X-band Power Amplifier MMIC , [mA] P1dB 36 EMM5068X X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER , -Tone Total Output Pow er [dBm ] 3 31 EMM5068X X-band Power Amplifier MMIC OUTPUT POWER, DRAIN
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EMM5068X
EMM5068X
X-band amplifier
462 008 0004 00 AF
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2006 - EMM5068X
Abstract: X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm (typ.) High , DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for , -111A(C=100pF, R=1.5k) Edition 1.0 December 2005 1 EMM5068X X-band Power Amplifier MMIC , EMM5068X X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD=6V, IDD(DC)=1500m A , ] 3 31 EMM5068X X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by
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EMM5068X
EMM5068X
X-band amplifier
SCL 1058
x-band mmic
MMIC X-band amplifier
ED-4701
emm5068
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x-band mmic core chip
Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
Text: A GaAs X-Band Multifunction Control MMIC Using the MSAG® Process Abstract This paper describes efforts to achieve first pass design success for an X-band control MMIC consisting of multi-bit phase , . A discussion of the merits of multifunction MMIC integration using MSAG® Process 5 will be , success. The X-band control MMIC designed using the MSAG® process and following the outlined design , microwave control MMIC resulted in an RF spec yield of over 90%.making this chip extremely desirable for
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2004 - FMM5061VF
Abstract: FMM5061 x-Band High Power Amplifier ED-4701
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER , Drain Current [mA] P1dB 36 FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs , ] 3 30 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by
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FMM5061VF
FMM5061VF
FMM5061
x-Band High Power Amplifier
ED-4701
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2004 - Not Available
Abstract: No abstract text available
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , mA dB dB 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT , Drain Current [mA] P1dB FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT , FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage
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FMM5061VF
FMM5061VF
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2002 - MA03501D
Abstract: x-band mmic
Text: V 1.00 MA03501D X-Band Gain/Phase Control MMIC 8.0 11.0 GHz Features E E E E E 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , / attenuator/buffer amplifier MMIC . The on-chip serial to parallel converter circuitry allows for control of , 6.0 7.0 dB 12 dB Attenuator Bit 10.8 12 13.2 dB 1. TB = MMIC Base Temperature V1.00 X-Band Serial Input Gain/Phase Control MMIC 2/7 MA03501D Electrical Characteristics
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MA03501D
MA03501D
x-band mmic
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2002 - x-band mmic
Abstract: DA10 DA11 MA03503D
Text: V 1.00 MA03503D X-Band Gain/Phase Control MMIC 8.0 11.0 GHz Features E E E E E 8.0-11.0 GHz Parallel Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , shifter/ attenuator/buffer amplifier MMIC . The on-chip driver circuitry allows for control of the 6 phase , dB 1. TB = MMIC Base Temperature V1.00 X-Band Parallel Input Gain/Phase Control MMIC 2/7 , additional data sheets and product information. V1.00 X-Band Parallel Input Gain/Phase Control MMIC
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MA03503D
MA03503D
x-band mmic
DA10
DA11
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2002 - x-band MMIC
Abstract: X band 5-bit phase shifter MA03501D MMIC X-band amplifier x-band mmic phase
Text: RO-P-DS-3004 - - MA03501D X-Band Gain/Phase Control MMIC 8.0 11.0 GHz Features 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , / attenuator/buffer amplifier MMIC . The on-chip serial to parallel converter circuitry allows for control of , 6.0 7.0 dB 12 dB Attenuator Bit 10.8 12 13.2 dB 1. TB = MMIC Base Temperature RO-P-DS-3004 - - X-Band Serial Input Gain/Phase Control MMIC 2/7 MA03501D Electrical
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RO-P-DS-3004
MA03501D
MA03501D
x-band MMIC
X band 5-bit phase shifter
MMIC X-band amplifier
x-band mmic phase
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x-band power transistor
Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the , layers. Both microwave and digital FETS can be fabricated on a single MMIC , with each microwave device , realization of Figure 1. (above) Arrhenius Plot of MSAG Power MMIC Accelerated RF Life Test (~2 dB
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